SCHOTTKY DIODE D16S60C Search Results

SCHOTTKY DIODE D16S60C Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CUHS15S40		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H	Datasheet
CUHS20F30		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 30 V, 2 A, US2H	Datasheet
CUHS15S60		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H	Datasheet
CLS10F40		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E	Datasheet
CUHS20F60		Toshiba Electronic Devices & Storage Corporation	Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H	Datasheet

SCHOTTKY DIODE D16S60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 38 nC IF 16 A • No temperature influence on the switching behavior	Original	IDH16S60C PG-TO220-2 D16S60C	PDF
Schottky diode d16s60c Abstract: D16S60C Contextual Info: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 38 nC IF 16 A • No temperature influence on the switching behavior	Original	IDH16S60C IDH16S60C PG-TO220-2 D16S60C Schottky diode d16s60c	PDF
D16S60C Abstract: Schottky diode d16s60c IDH16S60C JESD22 Contextual Info: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH16S60C PG-TO220-2 D16S60C D16S60C Schottky diode d16s60c IDH16S60C JESD22	PDF
D16S60C Abstract: Schottky diode d16s60c IDT16S60C JESD22 Contextual Info: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT16S60C PG-TO220-2-2 D16S60C D16S60C Schottky diode d16s60c IDT16S60C JESD22	PDF
D16S60C Abstract: PG-TO-220-2-2 Schottky diode d16s60c IDT16S60C JESD22 Contextual Info: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT16S60C PG-TO220-2-2 D16S60C D16S60C PG-TO-220-2-2 Schottky diode d16s60c IDT16S60C JESD22	PDF
Schottky diode d16s60c Abstract: D16S60C Contextual Info: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT16S60C PG-TO220-2-2 IDT16S60C PG-TO220-2-2 D16S60C Schottky diode d16s60c	PDF
DI 708 ag Contextual Info: IDT16S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 38 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 16 A I F @ T C < 100 °C 24 A • Revolutionary semiconductor material - Silicon Carbide	Original	IDT16S60C PG-TO220-2-2 20mA2) DI 708 ag	PDF