SCHOTTKY CST Search Results

Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production 1 2013-07

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

Contextual Info: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA

Contextual Info: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

marking code 72

Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: CBS10S40 Schottky Barrier Diode Silicon Epitaxial CBS10S40 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(2) = 0.48 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

Contextual Info: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500＊ mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg

Contextual Info: CTS520 Schottky Barrier Diode Silicon Epitaxial CTS520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small chip scale package: Thickness = 0.40 mm (max) 3. Packaging and Internal Circuit 1: Cathode 2: Anode

ps2 CIRCUIT diagram

Abstract: ps2 CIRCUIT power diagram PS3 controller ps2 power supply FDB7045L MAX5079 MAX5079EUD MS7050
Contextual Info: 19-3584; Rev 0; 2/05 ORing MOSFET Controller with Ultra-Fast 200ns Turn-Off The MAX5079 ORing MOSFET controller replaces ORing diodes in high-reliability redundant, parallel-connected power supplies. Despite their low forward-voltage drop, ORing Schottky diodes cause excessive

PS3 controller

Contextual Info: 19-3584; Rev 1; 3/09 ORing MOSFET Controller with Ultra-Fast 200ns Turn-Off The MAX5079 ORing MOSFET controller replaces ORing diodes in high-reliability redundant, parallel-connected power supplies. Despite their low forward-voltage drop, ORing Schottky diodes cause excessive

Contextual Info: 1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit

marking code ACL

Abstract: SRAF520 ITO-22QAC
Contextual Info: TAIWAN SEM ICONDUCTO R E RoHS SRAF520 • SRAF5150 Isolated 5.0 AMPS. Schottky Barrier Rectifiers ITO-22QAC C OM PLIANCE s . ■ aUlKS.ttJ)“ ■" ic> ,1 3 4 .;s * p l A .1 1 « 3 CC) .130(2.3;:. /lUClA'IUM/ .ISIJV/i.ï) "GUì :'4.9Ì Features ■y'

CMP-01

Abstract: cmp01c CMP01CP CMP01CJ
Contextual Info: ANALOG DEVICES INC S 1E ANALOG DEVICES ]> üôlbâGO GOBfci'm 3SE -7 3 -5 3 . IANA Fast Precision Comparator FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The CMP-01 is a monolithic fast precision voltage compara­ tor using an advanced NPN-Schottky Barrier Diode process.

34ba

Abstract: T-801 schematic e8a Abco 54f242 34HA
Contextual Info: MIL-M- 38510/34SA 9 M AY 1985 s w E T r m m r c -MI L-M- 38510/ 348 USAF 21 F ebruary 1984 MILITARY SPECIFICATION MICROCIRCUITS, n iGI TAL , ADVANCED SCHOTTKY T T L, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n I s approved f o r use by a l l D e p a r t ­

93448

Abstract: TA 7136 p
Contextual Info: 93448 ISOPLANAR SCHOTTKY TTL MEMORY 512x8-BIT PROGRAMMABLE READ ONLY MEMORY 0 / 077! D E S C R IP T IO N - The 9 3 4 4 8 is a f u lly decoded 4 0 9 6 -b it fie ld P ro gram m able R OM orga n ­ ized 512 w o rd s b y e ig h t b its per w o rd . T h e 9 3 4 4 8 has 3-state o u tp u ts . T h e device is

Contextual Info: 19- 1245; Rev 0; 7/97 > M / X I A I Adjustable-Output, Switch-Mode Current Sources with Synchronous R ectifier _ Applications Battery-Powered Equipment Laptop, Notebook, and Palmtop Computers Features ♦ 95% Efficiency ♦ +5.5V to +26V Input Supply Range

sky77528

Abstract: sky77534 SKY77526 SKY77705 SKY77548 SKY77542 SKY65404-21 SKY77544 SKY77701 AX508
Contextual Info: Product Selection Guide Fall 2010 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,