SCHOTTKY CST Search Results

avalanche diode

Abstract: an2025 st AN2025 STPS16H100CT STPS20H100CT STPS3045CT STPS6045CW 16A-100V transil diode equivalent
Contextual Info: AN2025 APPLICATION NOTE Converter Improvement Using Schottky Rectifier Avalanche Specification STMicroelectronics gives in product datasheets useful information for all their Schottky Rectifier families to define their working limit in the avalanche area. A simple method to determine if a Schottky diode can

Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CTS05S30 Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

CTS05S30

Abstract: marking code 8a
Contextual Info: CTS05S30 Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage

Contextual Info: CCS15S40 Schottky Barrier Diode Silicon Epitaxial CCS15S40 1. Applications • High-Speed Switching 2. Features 1 Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production

Contextual Info: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C Start of commercial production 1 2013-07

CCS15S30

Contextual Info: CCS15S30 Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit 1: Cathode 2: Anode CST2C 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A

Contextual Info: 1SS420CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Unit: mm Characteristics Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA

Contextual Info: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

1SS417CT

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: < Ku band internally matched power GaN HEMT > MGFK47G3745 13.75 – 14.5 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING The MGFK47G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. Unit : millimeters 21.0 +/-0.3 FEATURES 1

Contextual Info: CBS10S40 Schottky Barrier Diode Silicon Epitaxial CBS10S40 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(2) = 0.48 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

1SS416CT

Contextual Info: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

marking code 72

Contextual Info: CBS05F30 Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: CBS10S40 Schottky Barrier Diode Silicon Epitaxial CBS10S40 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(2) = 0.48 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit 1: Cathode

Contextual Info: DSR520CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR520CT High-Speed Switching Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 32 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300