SCHOTTKY BYS 50 Search Results
SCHOTTKY BYS 50 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54LS54/BCA |
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54LS54 - Bus Driver, LS Series, 1-Func, 8-Bit, Inverted Output |
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| 54LS54/BDA |
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54LS54 - Bus Driver, LS Series, 1-Func, 8-Bit, Inverted Output |
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| CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet | ||
| CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
| CUHS15S30 |
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Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H | Datasheet |
SCHOTTKY BYS 50 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Schottky Rectifier Diodes Type V rrm V Ifavm •f s m vF R thJC A A V °C/W tA = 25°C 10 ms ¡F = IfAVM tvj = 25°C RthJA tvj max outline °c/w °c BYS 21-45 45 1,0 50 0,55 - 20 125 134 BYS 21-90 90 1,0 30 0,90 - 30 125 134 BYS 22-45 45 1,7 100 0,55 - 8 125 |
OCR Scan |
BYV143 GG21A7 | |
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Contextual Info: BYS 33 Silicon Schottky barrier diodes FEATURES • Forward current 25 A • Reverse voltage 25 V - 45 V • Higher efficiency • Available in different modifications of the package APPLICATIONS • Rectifying in low voltage power supplies • Chopper • Rectifier bridges |
OCR Scan |
15-20000Hz TT70S7Û D0CH102 | |
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Contextual Info: Epitaxiale Gleichrichterdioden Epitaxial rectifier diodes Diodes épitaxiales Typ Type V rrm If a v m V •Si A 500 '"il"!«#! !•’ b y v 3 2 -i s |w 32-2oa Ir Maßbild tv] max îrr Outline tA = 25°C ■ B p 9 -5 0 0 VF If s m o If = I favm VR = Vrrm |
OCR Scan |
32-2oa BYS91 | |
BYS34Contextual Info: BYS34 Silicon schottky barrier diodes FEATURES • Forward current 35 A • Reverse voltage 20 V - 80 V • Higher efficiency • Available in different modifications of the package APPLICATIONS • Rectifying in low voltage power supplies • Chopper • Rectifier bridges |
OCR Scan |
BYS34 15-20000Hz sinusS34/20. BYS34/60. DD0T10S BYS34 | |
BYS10-45
Abstract: bys10
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OCR Scan |
BYS10 S10-25 S10-35 BYS10-45 25K/W 12-Dec-94 BYS10-45 bys10 | |
BYS 045
Abstract: BYS-045
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Original |
BYS10-25 BYS10-45 DO-214AC BYS10-35 BYS10-25 25K/W 26-Aug-03 BYS 045 BYS-045 | |
BYS 045Contextual Info: BYS10-25 thru BYS10-45 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 25 V to 45 V IFSM 40 A VF 0.50 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • • • • • |
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BYS10-25 BYS10-45 DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 BYS 045 | |
BYS 045
Abstract: BYS10-25 BYS10-45 JESD22-B102D J-STD-002B bys045
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Original |
BYS10-25 BYS10-45 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYS 045 BYS10-45 JESD22-B102D J-STD-002B bys045 | |
BYS 045
Abstract: BYS10-45 BYS10-25 JESD22-B102D J-STD-002B
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Original |
BYS10-25 BYS10-45 J-STD-020C 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 BYS 045 BYS10-45 JESD22-B102D J-STD-002B | |
BYS 045
Abstract: BYS 045 08 BYS 21
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Original |
BYS10-25 BYS10-45 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC J-STD-002 08-Apr-05 BYS 045 BYS 045 08 BYS 21 | |
BYS 045
Abstract: BYS-045 BYS10-25 BYS10-35 BYS10-45 J-STD-002
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Original |
BYS10-25 BYS10-45 J-STD-020, AEC-Q101 DO-214AC 2002/95/EC 2002/96/EC 11-Mar-11 BYS 045 BYS-045 BYS10-35 BYS10-45 J-STD-002 | |
bys10
Abstract: BYS 045
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Original |
BYS10-25 BYS10-45 J-STD-020, DO-214AC AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 bys10 BYS 045 | |
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Contextual Info: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max |
OCR Scan |
57/58-E | |
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Contextual Info: T e m ic BYSIO TELEFUNKEN Semiconductors Schottky Barrier Rectifier Features • • • • • High efficiency Low power losses Very low switching losses Low reverse current High surge capability Applications Polarity protection Low voltage, high frequency rectifiers |
OCR Scan |
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Contextual Info: BYS11-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF AV 1.5 A VRRM 90 V IFSM 40 A VF 0.75 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • • • • • • • Case: DO-214AC (SMA) |
Original |
BYS11-90 DO-214AC J-STD-020C UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 | |
bys12
Abstract: BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3
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Original |
BYS12-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 bys12 BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3 | |
BYS11-90
Abstract: JESD22-B102D J-STD-002B
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Original |
BYS11-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYS11-90 JESD22-B102D J-STD-002B | |
BYS11-90
Abstract: JESD22-B102D J-STD-002B e3 tr MARKING code 14 DO-214AC
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Original |
BYS11-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYS11-90 JESD22-B102D J-STD-002B e3 tr MARKING code 14 DO-214AC | |
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Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability |
Original |
BYS12-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability |
Original |
BYS12-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: BYS11-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability |
Original |
BYS11-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 | |
vishay MARKING UM SMA
Abstract: BYS11-90 JESD22-B102 J-STD-002 TR3 Marking
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Original |
BYS11-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 vishay MARKING UM SMA BYS11-90 JESD22-B102 J-STD-002 TR3 Marking | |
vishay MARKING UM SMA
Abstract: BYS12-90 JESD22-B102 J-STD-002 BYS12-90-E3
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Original |
BYS12-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 vishay MARKING UM SMA BYS12-90 JESD22-B102 J-STD-002 BYS12-90-E3 | |
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Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability |
Original |
BYS12-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 | |