SCHEMATIC SYMBOL FOR N CHANNEL FET Search Results

Contextual Info: SWD-109/119 Single/Quad Drivers for GaAs FET Switches and Attenuators Features SO-8 SWD-109 n High Speed CMOS Technology n Single Channel (SWD-109) n Quad Channel (SWD-119) n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package

SWD-109

Abstract: SWD-119 SWD-109RTR SWD-109TR SWD-119RTR SWD-119TR SWD-109-PIN Quad N CHannel Fet
Contextual Info: SWD-109/119 Single/Quad Drivers for GaAs FET Switches and Attenuators Features SO-8 SWD-109 n High Speed CMOS Technology n Single Channel (SWD-109) n Quad Channel (SWD-119) n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package

swd-109

Contextual Info: a/7 A M P com pany Single/Quad Drivers for GaAs FET Switches and Attenuators SWD-109/119 V 2 .0 0 Features • • • • • • SO-8 SWD-109 High Speed CMOS Technology Single Channel (SWD-109) Quad Channel (SWD-119) Positive Voltage Control Low Power Dissipation

swd-109

Contextual Info: an A M P com pany Single/Quad Drivers for GaAs FET Switches and Attenuators SWD-109/119 V 2.00 SO-8 SWD-109 Features • High Speed C M O S [Whnolo>>y PIN 8 fl R •Sing le Cluinncl (S W I)- I(W ) 1497-1574 (3 80-4.00) • Quae! Channel IS W D - 1 IV )

E67349

Abstract: TLP206G
Contextual Info: TO SH IBA TLP206G TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP206G PBX Unit in mm MODEM •FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin SOP. The TLP206G is a 2-Form-A switch which is suitable for replacement

transistor 7350 A

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350
Contextual Info: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: TOSHIBA TLP206G TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP206G PBX Unit in mm MODEM •FAX CARD MEASUREMENT INSTRUMENT The TOSHIBA TLP206G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 pin

Contextual Info: IH 5 0 0 1 /IH 5 0 0 2 1 -Channel Driver with SPST FET Switch Gate Available GENERAL DESCRIPTION FEATURES • • • Gate Lead Available fo r Nulling Charge Injection Voltage Channel C om plete—Interfaces W ith Most Integrated Logic Low O F F Power Dissipation, —1 mW

2SK3264-01MR equivalent

Abstract: 2SK3264-01MR 2SK3264 2sk3264-01
Contextual Info: 2SK3264-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: Quad Driver for GaAs FET Switches and Attenuators SWD-119 V 5.00 Features SO-16 n High Speed CMOS Technology n Quad Channel n Positive Voltage Control n Low Power Dissipation n Low Cost Plastic SOIC Package Description The SWD-119 is a quad channel driver used to translate

2SK3339-01

Abstract: 230mH
Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3340-01

Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3338-01

Abstract: L356
Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3341-01 equivalent

Abstract: 2SK3341-01 2sk3341
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3337

Abstract: 2SK3337-01 mosfet 600V 7A N-CHANNEL L173
Contextual Info: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

N and P MOSFET

Contextual Info: TOSHIBA TLP206G TO SHIBA PHOTOCOUPLER t i GaAs IRED & PHO TO -M O S FET P i n k r ; PBX U nit in mm M O D E M * FAX CARD M EASUREM ENT INSTRUMENT The TOSHIBA TLP206G consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a 8 pin SOP.

AGR19180EF

Abstract: JESD22-A114 Z111A
Contextual Info: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Application Notes on LM7805

Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

Transistor J182

Contextual Info: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

VIM-332

Abstract: 200B103MW 50X 200B103MW
Contextual Info: PTF 102088 LDMOS RF Power Field Effect Transistor 45 Watts, 2110–2170 MHz Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates with 47% efficiency at P–1dB and has a

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for