SCHEMATIC DIAGRAM 5.5 VDC POWER SUPPLY Search Results

Raytheon RF Components noise amplifier

Abstract: RAYTHEON RMLA3565A-58 RO4003 LA3565 low noise amplifier 15 ghz rf in -160 db
Contextual Info: RMLA3565A-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RMLA3565A-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or external gate bias supply. This device uses

wt7505

Abstract: PC817 OPTOCOUPLER SHARP optocoupler PC817b wt7505c TOS8650 l5991 WT-7505C matsushita aluminium capacitors Q1 4939 TDK TRANSFORMER
Contextual Info: AN2775 Application note Forward converter for cash register applications Introduction This document introduces a reference design of a power supply for the electronic fiscal cash register EFCR demonstration board (STEVAL-IPC001V1). The power supply is based on

3055 7F

Abstract: j325 129CD
Contextual Info: AT&T i Data Sheet 129CD Quintuple Static Shift Register Features Vcc • Five 32-bit static shift registers ' 20 kß ■ 5.0 ± 0.5 V power supply: 250 mW max ■ TTL-com patible input/output ■ Single-phase clock, positive-edge triggered INPUT AND CLOCK PINS '

DS-873

Contextual Info: AT&T Data Sheet 129CD Q uintuple S tatic Shift R egister vcc Features • Five 32-bit static shift registers • 20 kfi ■ 5.0 ± 0.5 V power supply: 250 mW max ■ TTL-compatible input/output ■ Single-phase clock, positive-edge triggered INPUT AND CLOCK PINS '

8823* toshiba

Abstract: TL5564
Contextual Info: Integrated C ircuits Incorporated 10301 W illows Road IK ill = a * C M O S 32X 8-01 — 256K32 768W S0TRDT,X C8RB,T integrated circuits incorporated FEATURES: • Very low power dissipation ■ Single 5V power supply ■ Data retention to 2.0V VDC ■ Fully static operation

Contextual Info: HMC407MS8G v01.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 5.0 - 7.0 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5.0 V

H407

Abstract: HMC407MS8GE 407MS8GE HMC407MS8G
Contextual Info: HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm

Contextual Info: HMC407MS8G / 407MS8GE v03.1006 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This ampliier is ideal for use as a power ampliier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm

6201A

Contextual Info: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise

HMC407MS8GE

Abstract: marking gain stage GaAs MMIC AMPLIFIER HMC407MS8G schematic diagram of transistor amplifier 5v to 6 407MS8GE h407
Contextual Info: HMC407MS8G / 407MS8GE v03.1006 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 5 - 7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm

6201A

Abstract: at 6201a
Contextual Info: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise

schematic diagram of phone adapter

Abstract: 11DQ060 optocoupler PC817D LNK500 ELECTROLYTIC capacitor, .10uF 50V ac power adapter for phone schematic 4.7uf 400V transformer specification single line diagram #26tiw Electrolytic capacitor 47uf 400V
Contextual Info: Design Example Report Title 1.5W power supply using LNK500P Specification Input: 85 – 264VAC Output: 5.0V / 300mA Application Adapter Author Power Integrations Applications Department Document Number DER-14 Date February 4, 2004 Revision 1.0 Summary and Features

RF AMPLIFIER marking S1

Contextual Info: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900

6201A

Abstract: at 6201a 6201c AT73C239 LD01
Contextual Info: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise

Contextual Info: Features • • • • • • • • • • • • • • • Main Supply 3.0V to 3.6V Independent 2.5V to 3.6V Auxiliary Supply for Backup Section Internal State Machine for Startup 25 mA/1.8V-2.75V Linear Low Drop Out Regulator with High PSRR and Low Noise

STV9556

Abstract: 51c33 FDH400 TDA9207 History of CRT Monitor circuit diagram
Contextual Info: STV9556 7.5 ns triple-channel high voltage video amplifier Features • Triple-channel video amplifier ■ Supply voltage up to 115 V ■ 80 V output dynamic range ■ Perfect for pictureboost application requiring high video amplitude ■ Pinning for easy PCB layout

Contextual Info: HMC-C036 v04.0310 WIDEBAND POWER AMPLIFIER MODULE, 0.01 - 15 GHz AMPLIFIERS 1 Features Gain: 12 dB P1dB Output Power: +28 dBm Regulated Supply and Bias Sequencing Hermetically Sealed Module Typical Applications Field Replaceable SMA connectors 0 °C to +85 °C Operating Temperature

Contextual Info: HMC-C036 v04.0310 WIDEBAND POWER AMPLIFIER MODULE, 0.01 - 15 GHz AMPLIFIERS 1 Features Gain: 12 dB P1dB Output Power: +28 dBm Regulated Supply and Bias Sequencing Hermetically Sealed Module Typical Applications Field Replaceable SMA connectors 0 °C to +85 °C Operating Temperature

HMC-C036

Contextual Info: HMC-C036 v02.1007 WIDEBAND POWER AMPLIFIER MODULE, 0.01 - 15 GHz CONNECTORIZED MODULES - AMPLIFIERS 9 Features Gain: 12 dB P1dB Output Power: +28 dBm Regulated Supply and Bias Sequencing Hermetically Sealed Module ypical Applications Typical Field Replaceable SMA connectors

ps4 schematic

Abstract: HMC392 PS3 flat power supply
Contextual Info: HMC392 v00.1002 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC392 is ideal for use as a low noise amplifier for: Gain: 15.5 dB • Point to Point Radios Single Supply Voltage: +5.0V

LM94022

Abstract: LM95022 CSI-3-038
Contextual Info: LM94022 Evaluation Board User’s Guide Copyright 2004 National Semiconductor Corporation 1 www.national.com LM94022 Evaluation Board User’s Guide Revision A June 16, 2005 LM94022 Evaluation Board User’s Guide Table of Contents Table of Contents 2 References

S2-24V

Abstract: RAYTHEON Raytheon RF Components noise amplifier RMLA3565-58 RO4003 rf 58 s113v la3565
Contextual Info: RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no

DC 0509

Abstract: HMC-C037
Contextual Info: HMC-C037 v03.0509 WIDEBAND POWER AMPLIFIER BENCHTOP MODULE, 0.01 - 15 GHz 1 Features AMPLIFIERS Gain: 12 dB P1dB Output Power: +28 dBm Eliminates Band Switching Excellent Gain Flatness Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module

Contextual Info: HMC-C037 v03.0509 WIDEBAND POWER AMPLIFIER BENCHTOP MODULE, 0.01 - 15 GHz 1 Features AMPLIFIERS Gain: 12 dB P1dB Output Power: +28 dBm Eliminates Band Switching Excellent Gain Flatness Regulated Supply and Bias Sequencing Typical Applications Hermetically Sealed Module