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"NAND Gate" Abstract: SN74LVC10A SCAS284D Contextual Info: SN74LVC10A TRIPLE 3-INPUT POSITIVE-NAND GATE SCAS284D – JANUARY 1993 – REVISED JANUARY 1997 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)	Original	SN74LVC10A SCAS284D MIL-STD-883, JESD-17 "NAND Gate" SN74LVC10A SCAS284D	PDF

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"NAND Gate"

Abstract: SN74LVC10A SCAS284D
Contextual Info: SN74LVC10A TRIPLE 3-INPUT POSITIVE-NAND GATE SCAS284D – JANUARY 1993 – REVISED JANUARY 1997 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Original

SN74LVC10A SCAS284D MIL-STD-883, JESD-17 "NAND Gate" SN74LVC10A SCAS284D

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