SC102 DIODE Search Results
SC102 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
SC102 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Application Note for Regulator ICs • Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When |
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yg6260sc102 | |
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Contextual Info: Application Note for Regulators • Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When |
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yg6260sc102 | |
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Contextual Info: 600 V, TBD A, IGBT FGD633 Preliminary Features Package Low Saturation Voltage High Speed Switching With Integrated Low VF Fast Recovery Diode RoHS Compliant TO-3PF-3L VCE - 600 V IC-TBD A TC = 100 °C |
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fgd633fgd633-ds | |
FMB-24MContextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded |
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fmb-24mul94v-0september/28/ssa-03414 | |
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Contextual Info: 1-1-1 Linear Regulator ICs Application Note • Heat dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the heatsink with a proper mounting torque. |
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si-3000bsi-3000csi-3000fsi-3000j+4 | |
200v dc voltage regulator
Abstract: rectifier 200v ac to 200v dc
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si-3000bsi-3000csi-3000fsi-3000j+8 | |
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Contextual Info: Switching Type - Application Note •Heat Radiation and Reliability ■Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink, |
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sfpm-62si-8000esi-8200lam01z+6 | |
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Contextual Info: SANKEN ELECTRIC CO., LTD. FMLB-4204S 1 Scope The present specifications shall apply to an FMLB-4204S. 2 Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3 Flammability UL94V-0 Equivalent 120614 SSA-05446 1/8 |
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fmlb-4204sul94v-0ssa-05446 | |
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Contextual Info: VRM = 600 V, IF AV = 20 A, trr = 35 ns(max.) Fast Recovery Diode FMXS-1206S Features Package The FMXS-1206S is a fast recovery diode which realize a peak reverse voltage of 600V, a typical forward voltage drop of 1.4V and typical trr-time of 25ns optimizing a life-time control. It has the characteristics |
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fmxs-1206so-220f-2lfmxs-1206s-ds | |
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Contextual Info: Dropper Type - Application Note •Heat Radiation and Reliability Fastening Torque The reliability of an IC is highly dependent on its operating temperature. Design should pay particular attention to ensuring ample space for radiating heat. Be sure to apply silicon grease to the IC before attaching a heatsink, |
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si-3000nsi-3001nsi-3002nsi-3000b+6 | |
SI8011
Abstract: Toshiba axial diodes g-746
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si-8400lsi-8500lsi-8511nvsspi-8000a+8 | |
G746
Abstract: YG-6260 SI8011 Toshiba axial diodes power Diode 200V 10A YG6260
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10-to20g746yg-6260si8011+3 | |
X 4202S
Abstract: 4202S Sanken marking
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ctxa-4202sfeb/1/2013trr---------------25nsx 4202s+2 | |
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Contextual Info: VRM = 400 V, IF AV = 20 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTLD-4204S Features Package The CTLD-4204S is a fast recovery diode which realize a peak reverse voltage of 400 V, a typical forward voltage drop of 1.25 V and typical trr of 22 ns |
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ctld-4204sctld-4204s-ds | |
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XS4603
Abstract: XS460
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ctxs-4603sctxs-4603s-dsxs4603xs460 | |
shinetsu G746
Abstract: SLA7051MLF871 stepper motor characteristics curve G746 SC102 SLA7051M YG6260
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28210dsla7051msc102yg6260+4 | |
LM motor driver
Abstract: SLA7051MLF871 YG6260 G746 SC102 SLA7051M SLA7051MLF shinetsu G746 motor driver step
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sla7051m28210csc102yg6260+6 | |
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Contextual Info: VRM = 200 V, IF AV = 45 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4452S Features Package The CTXS-4452S is a high current and fast recovery diode which realize a peak reverse voltage of 200V, a typical forward voltage drop of 0.92V and typical |
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ctxs-4452s500itedctxs-4452s-ds | |
XS460Contextual Info: VRM = 300 V, IF AV = 60 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTXS-4603S Features Package The CTXS-4603S is a high power and fast recovery diode which realize a peak reverse voltage of 300 V, a typical forward voltage drop of 1.05 V (typ.) and typical |
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ctxs-4603sctxs-4603s-dsxs460 | |
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Contextual Info: VRM = 600 V, IF AV = 20 A, trr = 30 ns(max.) Fast Recovery and High Power Diode Preliminary CTLD-6206S Features Package The CTLD-6206S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.4 V |
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ctld-6206so-247-3lctld-6206s-ds | |
XS460Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 35 ns(max.) Fast Recovery and High Power Diode CTXS-4606S Features Package The CTXS-4606S is a high power diode of the low-noise and low-loss which realize a peak reverse voltage of 600V. Typical forward voltage drop of 1.45V |
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ctxs-4606sctxs-4606s-dsxs460 | |
XS4202Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 30 ns(max.) Fast Recovery and High Power Diode CTXS-4202S Features Package The CTXS-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns |
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ctxs-4202sctxs-4202s-dsxs4202 | |
sanken SAPM01P
Abstract: sapm01p SAPM01 sanken SAP 61432 M01N SAPM01N G746 SC102 YG6260
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sapm01nsapm01p251shot00e-04+12 | |
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Contextual Info: VRM = 300 V, IF AV = 60 A, trr = 100 ns(max.) Low VF and High Power Diode CTNS-4603S Features Package The CTNS-4603S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 300 V. Typical forward voltage drop of 0.95 V (typ.) is realized by optimizing the relationship of |
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ctns-4603sctns-4603s-ds | |