SC-74 ONSEMI Search Results

zener 5A6

Abstract: MMQA5V6T1-5A6 SC-74 onsemi 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1 MMQA21VT1
Contextual Info: MMQA Quad Common Anode Series SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

318F

Abstract: MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1 MMQA21VT1 MMQA22VT1 MMQA24VT1 MMQA5V6T1-5A6
Contextual Info: MMQA Quad Common Anode Series Preferred Devices SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

Contextual Info: MMQA, SZMMQA Quad Common Anode Series SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

SC-74 Device Marking 22A

Contextual Info: MMQA, SZMMQA Quad Common Anode Series SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

marking 5A6

Abstract: SZMMQA marking code 5a6 t MMQA5v6
Contextual Info: MMQA, SZMMQA Quad Common Anode Series SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

SMS05T1

Abstract: transistor sc 308 318F Transient Voltage Suppressors
Contextual Info: SMS05T1 SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

SMS05T1

Contextual Info: SMS05T1 Series SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

marking 5V0

Abstract: A2315 SMS05T1
Contextual Info: SMS05T1 Series SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

SMS05T1

Abstract: SMS24T1 318F SMS12T1 SMS15T1
Contextual Info: SMS05T1 Series SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

TL556

Abstract: SMS05T1
Contextual Info: SMS05T1 Advance Information SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

SMS05T1

Abstract: 318F SC-74 SMS12T1 SMS15T1 SMS24 SMS24T1 SC74
Contextual Info: SMS05T1 Series SC- 74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

SMS05T1

Abstract: 318F SMS05 SMS12T1 SMS15 SMS15T1 SMS24 SMS24T1 marking CODE 001
Contextual Info: SMS05T1 Series SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as

318F

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC-74 CASE 318F-04 ISSUE J 6 DATE 09 JAN 2003 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM

5A6 marking code

Abstract: marking code SC-74 zener 5A6 sc-74 thermal resistance MMQA5V6T3 5a6 zener zener 5A6 ON SC7410 MMQA12VT1 MMQA13VT1
Contextual Info: MMQA Quad Common Anode Series Preferred Devices SC−74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

MMQA6V2T3

Abstract: 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1 MMQA21VT1 MMQA22VT1 MMQA24VT1
Contextual Info: MMQA Quad Common Anode Series Preferred Devices SC−74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is

marking H2A sot-23

Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

free transistor equivalent book

Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D

SZNCP3712ASNT1G

Abstract: Y601B
Contextual Info: NCP3712ASN, SZNCP3712ASN Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. http://onsemi.com Features MARKING DIAGRAM • Capable of Switching Loads of up to 200 mA without External

Contextual Info: NCP3712ASN, SZNCP3712ASN Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. http://onsemi.com Features MARKING DIAGRAM • Capable of Switching Loads of up to 200 mA without External

EIA-468 label location

Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

SZNUP4301MR6T1G

Contextual Info: NUP4301MR6T1G, SZNUP4301MR6T1G Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .

Contextual Info: NUP4301MR6T1G, SZNUP4301MR6T1G Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .

Contextual Info: NUP4301MR6T1G, SZNUP4301MR6T1G Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .

of IC 74

Abstract: IMH20T1G
Contextual Info: IMH20T1G Dual Bias Resistor Transistor NPN Surface Mount • Low VCC sat 80 mV max at IC/IB = 50 mA/2.5 mA • High Current: IC = 600 mA max • Lead Free Plating http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector- Base Voltage V(BR)CBO