SC-74 MARKING CODE MI Search Results
SC-74 MARKING CODE MI Result Highlights (3)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TC4511BP | Toshiba Electronic Devices & Storage Corporation | CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet | ||
| 68305-001LF | Amphenol Communications Solutions | Din Accessory Coding | |||
| 65197-001LF | Amphenol Communications Solutions | Din Accessory Coding Part |
SC-74 MARKING CODE MI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IMT4FRA IMT4 Transistors AEC-Q101 Qualified General purpose dual transistors IMT4 IMT4FRA 0.3Min. ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 3000 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 IMT4FRA 0.95 0.95 1.9 |
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aec-q101sc-74ot-4572sa1514kfra+1 | |
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Contextual Info: IMX8FRA IMX8 Transistors AEC-Q101 Qualified General purpose dual transistors IMX8 IMX8FRA SMT6 X8 T108 (1) (2) 3000 0.8 0.3Min. ROHM : SMT6 EIAJ : SC-74 1.1 2.8 0~0.1 Code Basic ordering unit (pieces) 1.6 0.15 Marking (3) IMX8 IMX8FRA (4) Part No. Package |
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aec-q1012sc3906kfra2sc3906ksc-74 | |
318F
Abstract: SC74
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sc-74318f-05318f-01318f+1 | |
MMQA6V2T3
Abstract: 318F MMQA12VT1 MMQA13VT1 MMQA15VT1 MMQA18VT1 MMQA20VT1 MMQA21VT1 MMQA22VT1 MMQA24VT1
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sc-74mmqa6v2t3318fmmqa12vt1+7 | |
SZNUD3160DM*G
Abstract: SZNUD3160 SZNUD3160DMT1G JW8 F NUD3160DMT1G SZNUD SZNUD3160DM SZNUD3160LT1G sc741
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nud3160sznud3160ot-23nud3160/d+8 | |
SZNUP4301MR6T1GContextual Info: NUP4301MR6T1G, SZNUP4301MR6T1G Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge . |
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nup4301mr6t1gsznup4301mr6t1gsz/nup4301mr6t1gjesd22+3 | |
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Contextual Info: NUP4301MR6T1G, SZNUP4301MR6T1G Low Capacitance Diode Array for ESD Protection in Four Data Lines http://onsemi.com SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge . |
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nup4301mr6t1gsznup4301mr6t1gsz/nup4301mr6t1gjesd22+2 | |
ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
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dld601/dmar-2001r14525dld601+10 | |
marking 5V0
Abstract: A2315 SMS05T1
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sms05t1sc-74sms05sms24+4 | |
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Contextual Info: CM1213A-04SO, SZCM1213A-04SO 4-Channel Low Capacitance ESD Protection Array Product Description CM1213A−04SO has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. This device is ideal for protecting systems with high data and |
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cm1213a-04soszcm1213a-04socm1213a04so/d | |
marking code jw6
Abstract: marking jw6 SC74 marking 345 NUD3124LT1G JW6 NUD3124DMT1
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nud3124nud3124lt1marking code jw6marking jw6+3 | |
SMS05T1Contextual Info: SMS05T1 Series SC-74 Quad Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as |
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sms05t1sc-74sms05t1/d | |
NUD3160DMT1G
Abstract: JW8 ON JW8 F NUD3160LT1G 318F NUD3160 NUD3160DMT1 NUD3160LT1
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nud3160nud3160/dnud3160dmt1gjw8 on+5 | |
NUD3124DMT1G
Abstract: marking code jw6 NUD3124DMT1 318F NUD3124 NUD3124LT1 NUD3124LT1G NUD3124DM*G SC74 marking 345 square d relay
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nud3124nud3124/dnud3124dmt1gmarking code jw6+7 | |
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JW8 F
Abstract: JW8 ON SOT23 marking 658 load dump pulse MARKING CODE 618 SOT23
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nud3160ot-23jw8 fjw8 on+3 | |
D636
Abstract: cm1293a-04so CM1293A-02SO L2 SC74
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cm1293acm1293a/dd636cm1293a-04so+2 | |
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Contextual Info: CM1213A-04SO 4-Channel Low Capacitance ESD Protection Array Product Description CM1213A−04SO has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. This device is ideal for protecting systems with high data and |
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cm1213a-04socm1213a04so/d | |
marking 5A6
Abstract: SZMMQA marking code 5a6 t MMQA5v6
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sc-74marking 5a6szmmqamarking code 5a6 t+1 | |
D232 sot143
Abstract: D234 DIODE diode d232 sot143 usb tvs d232 vp 0104
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cm1213acm1213a/dd232 sot143d234 diode+3 | |
marking code jw6
Abstract: NUD3124DMT1 318F NUD3124 NUD3124LT1 NUD3124LT1G
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Original |
nud3124nud3124/dmarking code jw6nud3124dmt1+3 | |
d636
Abstract: D636 b D641 D-636
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Original |
cm1293acm1293a/dd636d636 b+2 | |
D636
Abstract: D636 b
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Original |
cm1293acm1293a/dd636d636 b | |
JW8 F
Abstract: eld2 318F NUD3160 NUD3160DMT1 NUD3160LT1
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Original |
nud3160nud3160/djw8 feld2+3 | |
NSS30070MR6Contextual Info: NSS30070MR6T1G 30 V, 0.7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss30070mr6t1gnss30070mr6/dnss30070mr6 | |