SC-61 EIAJ Search Results

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

TOSHIBA DIODE

Abstract: 1SS319
Contextual Info: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating

1SS391

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15

Contextual Info: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol

1SS391

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating

1SS391

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application Unit in mm Small package : SC-61 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

961001EAA2

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application z Small package : SC-61 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

1SS272

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

1SS319

Contextual Info: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic

1SS319

Contextual Info: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol

Contextual Info: 1SS272 TO SHIBA 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.2 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)

SS31 DIODE

Abstract: SS31
Contextual Info: 1SS319 T O SH IB A TOSHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.2 • • • 2.9 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-61

1SS319

Contextual Info: TOSHIBA 1SS319 TO SHIBA DIODE 1SS319 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-61 Ln Ln «- p

1SS391

Contextual Info: 1SS391 TOSHIBA TO SHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • Low Forward Voltage Small Package Ip = 5mA : VF 2) = 0.23V (Typ.) : SC-61 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SS272 T O SH IB A 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2 .9 -0-3 : SC-61 : Vp 3 = 0.92V (Typ.)

SS391

Contextual Info: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SS319 T O S H IB A TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS319 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5¿/A (Max.) Small Package : SC-61 1 .5 0 - 0 .1 5

TIN210

Contextual Info: For Audio Equipment MN662710RA Signal Processing LSI for CD Players Overview Digital audio interface EIAJ format Audio data serial interface M Di ain sc te on na tin nc ue e/ d The MN662710RA is a CD signal processing LSI that, on a single chip, combines an optics servo for the CD

Contextual Info: For Audio Equipment MN662710RA Signal Processing LSI for CD Players Overview Digital audio interface EIAJ format Audio data serial interface M Di ain sc te on na tin nc ue e/ d The MN662710RA is a CD signal processing LSI that, on a single chip, combines an optics servo for the CD