SC 2910 Search Results

Contextual Info: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6

Contextual Info: NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6

Contextual Info: NVJS4151P Trench Power MOSFET −20 V, −4.3 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board http://onsemi.com Utilization, Same as SC−70−6

Contextual Info: NTJS4151P, NVJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6

NTA4151

Abstract: marking TN NTA4151P, NTE4151P
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NTA4151P

Abstract: NTA4151PT1G NTA4151PT1 NTE4151P NTE4151PT1G
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NTA4151PT1G

Abstract: NTE4151PT1G NTA4151P NTA4151PT1 NTE4151P NTE4151PT1
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

SOT-353 MARKING VL

Abstract: m74vhc1gt50dtt1g A114 A115 C101 JESD22 MC74VHC1GT50 marking 255 SC-70 M74VHC1GT50DFT1G
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V, VCC = 5 V 1 VL M G G 5 1 TSOP−5/SOT−23/SC−59

Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V, VCC = 5 V 1 5 VL M G G 1 TSOP−5 / SOT−23 / SC−59

M74VHC1GT50DFT1G

Abstract: m74vhc1gt50 M74VHC1GT50DTT1G
Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 1 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V, VCC = 5 V 1 5 VL M G G 1 TSOP−5 / SOT−23 / SC−59

NLVVHC1G

Contextual Info: MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 SC−88A / SOT−353 / SC−70 DF SUFFIX CASE 419A 5 W1 M G G 1 TSOP−5 / SOT−23 / SC−59 DT SUFFIX CASE 483 W1 M G High Speed: tPD = 3.5 ns Typ at VCC = 5 V

Contextual Info: NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional • •

5V6 PIN diode

Contextual Info: NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional •

Contextual Info: NZL5V6AXV3T1 Series Preferred Devices Dual Common Anode ESD Protection Diodes SC−89 Package http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE 1 3 2 MARKING DIAGRAM Specification Features: • SC−89 Package Allows Either Two Separate Unidirectional •

MSD42WT1G

Abstract: MSD42T1G
Contextual Info: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface

Contextual Info: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface

Contextual Info: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface

NVA4153NT1G

Contextual Info: NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate

marking T92 SOT363

Abstract: Marking code t92
Contextual Info: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Dual N P-Channel mosfet sot-363

Abstract: NTJD3158CT4G 419B-02 NTJD3158CT1G 50-18N
Contextual Info: NTJD3158C Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected Features •ăComplementary N- and P-Channel MOSFET •ăSmall Size Dual SC-88 Package •ăReduced Gate Charge to Improve Switching Response •ăIndependently Connected Devices to Provide Design Flexibility

SOT363 MARKING 3B

Contextual Info: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is

Contextual Info: NTJD3158C Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected Features •ăComplementary N- and P-Channel MOSFET •ăSmall Size Dual SC-88 Package •ăReduced Gate Charge to Improve Switching Response •ăIndependently Connected Devices to Provide Design Flexibility