SC 2103 Search Results

RJ10 to RS232

Abstract: 4925 B RJ10 to RS485 HT-2008R RJ45 CAT-6 AMP amp rj45 DL1008 RJ45 CONNECTOR JACK PCB CAT6 2188A 4P4C plug db9
Contextual Info: NEXT BACK NETWORKING PRODUCTS/TELECOMMUNICATIONSPRODUCTS 網路商品/檢 測 器 網路接頭轉換器 EthernetTransceivers 詳細產品規格- 請點擊www.100y.com.tw 光纖線 OpticalFiber JTB000-01 SC-SC 54V003MCC2-01 54V015MCC2-01 JT1000-02 RID45-234

DIODE MOTOROLA 2101

Abstract: marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K
Contextual Info: 34 MOTOROLA SC {DIODE S/ OP T O} 6367255 MOTOROLA SC DE"|b3b7255 003Û3S3 5 <D I O D E S / O P T O 3<tC 3 8 3 5 3 D SOT23 continued) d e v ic e no. MMBV2097 thru MMBV2109 SMALL-SIGNAL TUNING DIODES T 0 P VIEW | i • D esigned for general-frequency control and tuning applications.

MC1558H

Abstract: MC1458CP
Contextual Info: MOTOROLA SC bSE TELECOM b3b72S3 D DDflSlSM 374 «MOTS MC1458,C MC1558 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA (DUAL MC1741) DUAL OPERATIONAL AMPLIFIERS (Dual MC1741) Internally Compensated, High Performance Dual Operational Amplifiers SILICON M ONOLITHIC

Contextual Info: 54ACT11034, 74ACT11034 HEX NONINVERTERS SC AS035A - D2957, FEBRUAHV 1988 - REVISED APRIL 1993 Inputs Are TTL-Voltage Compatible 54ACT11034 . . . J PACKAGE 74ACT11034 . . . DW OR N PACKAGE Flow-Through Architecture Optimizes PCB Layout TOP VIEW Center-FIn V c c and GND Configurations

BUV 12

Abstract: buv12
Contextual Info: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

ISO-2859-1

Abstract: 2026
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Applications • Balanced TRIGARD ■ Telecommunications ■ Approximately 8 mm diameter, 11 mm long ■ Industrial electronics ■ UL recognized ■ Commercial electronics ■ Custom configurations available

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Applications • Balanced TRIGARD ■ Telecommunications ■ Approximately 8 mm diameter, 11 mm long ■ Industrial electronics ■ UL recognized ■ Commercial electronics ■ Custom configurations available

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N I A BL S NT E Features Applications • Balanced TRIGARD ■ Telecommunications ■ Approximately 8 mm diameter, 11 mm long ■ Industrial electronics ■ UL recognized ■ Commercial electronics ■ Custom configurations available

ISO-2859-1

Abstract: PE-80 2026-XX-C
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Applications • Balanced TRIGARD ■ Telecommunications ■ Approximately 8 mm diameter, 11 mm long ■ Industrial electronics ■ UL recognized ■ Commercial electronics ■ Custom configurations available

Q525

Abstract: QQ-A-591 T23G
Contextual Info: 3 DRAWING MADE IN THIRD ANGLE PROJECTION 2 «•=»*' uoc DIST N DF REVISIONS DESCRIPTION Copyright 1977 by AMP Incorporated , Harrisburg, Pa, All IntternationaC Right^^B&erved. AMP Incorporated products COVERED BY U. Sc<^F^tJ^B«\^^VkTENTs\ANd/ oR PATENTS PENDING.

a564 transistor

Abstract: a684 transistor cat 7199 ca transistor a564 capacitor 226 35K 022 electrolytic transistor a684 A564 transistor datasheet up board exam date sheet 2012 D5653 B824 transistor
Contextual Info: TANTALUM LEADED CAPACITORS To find parts fast, visit at www.kemet.com. F-3100D 09/01 KEMET CAPACITORS Parts shown are actual size Due to ever changing technology, all series may not be depicted. Kemet Electronics Corporation P.O. Box 5928 • Greenville, SC 29606 • Tel: 864-963-6300

TZ 1167

Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection

Contextual Info: rr urm TECHNOLOGY 111187 Low Power Video Difference Amplifier FC O TU IK S D C SC RIPTIOn • Differential or Single-Ended Gain Block Adjustable ■ -3dB Bandwidth, Ay = ±2 50MHz tion on ±5V, or a single 5V supply, and gain >2. This ■ Slew Rate ■ Low Supply Current

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Applications Lead free versions available RoHS compliant lead free version * Multiple resistors tied to a common node Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC

MRF5175 transistor

Abstract: MRF5175 transistor 2sc 546
Contextual Info: MOT OR OL A SC CXSTRS/R F 4bE D • MOTOROLA b3b?2SM GOLOSO T -3 3 -0 5 ■ SEMICONDUCTOR TECHNICAL DATA MRF5175 T h e R F L in e 5 W - 400 MHi R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver

Contextual Info: b lE D • b EMT fl ST M ITSU B ISH I GOmbDfi DISCRETE 7 1 fl ■ H I T S MITSUBISHI LASER DIODES ML6XX1A SERIES SC FOR OPTICAL INFORMATION SYSTEMS DESCRIPTION ML6XX1A w hich is FEATURES a high - power sem iconductor laser • High power (CW 20mW) provides a stable, single transverse mode

415v two phase welding machine str CIRCUIT DIAGRAM

Abstract: shell tellus c10 oil toroid international ltd P/N TT63-630 shell tellus c10 oil data sheet 33-20l capacitor
Contextual Info: ELMARK Has been a registered trademark for Europe since the year of 2000 and is part of the international company ELMARK HOLDING SC. Our company is licensed for the manufacture of the full range of professional low-voltage electrical equipment. The Headquarters of ELMARK HOLDING AD are situated in Varna, Bulgaria. There is our logistics center which

2N6756

Contextual Info: MOTOROLA SC 14E D I b3b?aSM Q D Öl bic c. 1 " _r - 3 7W y XSTRS/R F MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA 2N6756 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S Power FETs are designed for low voltage, high

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

Contextual Info: Hl • ■ V . ■■ EL2244C/EL2444C D ual/Q uad Ixitc-Power 60 MHz Vnity-tiain Stable Op A mp . F e a tu re s G en era l D e sc r ip tio n • 60 M Hz gain-bandwidth product • Unity-gain stable • Low supply current per Amplifier = 5.2 mA at Vs = ± 15V

Contextual Info: b3 b 7 2 5 2 Q G I S G D B 7flT • M0T4 bflE D MOTOROLA SEMICONDUCTOR M O TO R O L A SC L O G I C * TECHNICAL DATA 8-Bit Scannable Register MC10E241 MC100E241 The MC10E/100E241 is an 8-bit shiftable register. Unlike a standard universal shift register such as the E141, the E241 features internal data

MRF671

Abstract: I505 part marking mwrc marking MBE sot-143 MRF5711L
Contextual Info: . { L ° R?LA SC X S TR S /R F MbE D M t 3 b 7 2 SM MOTOROLA 0 0 *1 5 0 5 5 1 •HOTb ' 7 ^ 3 f~ 2 .1 ■ SEMICONDUCTOR mmmmmmmmmmmmmammmammm TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor 'European Part Number . . . designed primarily for use in the high-gain, low-noise small-signal amplifiers

Contextual Info: TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT - - RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC D IST AD 00 R E V I S I ON S P LTR D E SC RIPTIO N S DATE EC — 0 G 3 C —0 7 7 1 - 0 4 DWN 28DEC04 APVD BSV JG D

SC8204

Abstract: Ferronics SGS-Thomson Transistors SGS-THOMSON
Contextual Info: SGS-THOMSON :IL[i g?GMD § M SC 82040 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS • EM ITTER BALLASTED ■ CLASS A LINEAR O PERATION ■ C O M M O N EMITTER ■ VSW R C APABILITY oo:1 @ RATED C O N D ITIO N S . ft 1.6 GHz TY PIC AL ■ N O ISE FIG U R E 15.5 dB @ 2 GHz