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    SBRA8160T3G Search Results

    SBRA8160T3G Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SBRA8160T3G
    On Semiconductor SBRA8160 - DIODE SIGNAL DIODE, Signal Diode Original PDF 128.61KB 4
    SBRA8160T3G-VF01
    onsemi DIODE SCHOTTKY 60V 1A SMA Original PDF 128.63KB
    SBRA8160T3G-VF01
    onsemi DIODE SCHOTTKY 60V 1A SMA Original PDF 260.45KB
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    SBRA8160T3G Price and Stock

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    FLIP ELECTRONICS SBRA8160T3G-VF01

    DIODE SCHOTTKY 60V 1A SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SBRA8160T3G-VF01 Tape & Reel 10,000 3,000
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    • 10000 $0.19
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    onsemi SBRA8160T3G

    DIODE SCHOTTKY 60V 1A SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SBRA8160T3G Tape & Reel
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    Bristol Electronics SBRA8160T3G 15,000 8
    • 1 -
    • 10 $0.68
    • 100 $0.34
    • 1000 $0.14
    • 10000 $0.09
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    Quest Components () SBRA8160T3G 12,000
    • 1 $0.58
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    SBRA8160T3G 12,000
    • 1 $0.90
    • 10 $0.90
    • 100 $0.90
    • 1000 $0.90
    • 10000 $0.11
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    onsemi SBRA8160T3G-VF01

    DIODE SCHOTTKY 60V 1A SMA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SBRA8160T3G-VF01 Tape & Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Flip Electronics SBRA8160T3G-VF01 10,000
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    • 10000 -
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    SBRA8160T3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    SS16T3G, SBRA8160T3G SS16/D PDF

    SS16T3G

    Abstract: SBRA8160
    Contextual Info: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    SS16T3G, SBRA8160T3G SS16/D SS16T3G SBRA8160 PDF