MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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RJK03N2DPA-00#J5A
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Renesas Electronics Corporation
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Built In Sbd N Channel Power MOSFET |
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RJK03N1DPA-00#J5A
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Renesas Electronics Corporation
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Built In Sbd N Channel Power MOSFET |
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RJK03P0DPA-00#J5A
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Renesas Electronics Corporation
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Built In Sbd N Channel Power MOSFET |
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RJK03N3DPA-00#J5A
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Renesas Electronics Corporation
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Built In Sbd N Channel Power MOSFET |
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RJK03P7DPA-00#J5A
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Renesas Electronics Corporation
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Built In Sbd N Channel Power MOSFET, WPAK-D(3), /Embossed Tape |
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