SBD DIODE S Search Results
SBD DIODE S Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG800FXF1ZMS3 | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD | Datasheet | ||
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet |
SBD DIODE S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Part Number List Characteristics Quick Reference Guide SBD for Power SBD for Small Current Explanation 1. Introduction 2. Schottky barrier diode SBD 3. 4. 5. 6. Comparison of SBD and FRD Leakage current and surge tolerance of SBD How to select SBD Basic electric characteristics of SBD |
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Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105) |
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sch2805enn7760mch3314sb0105+1 | |
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Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsq03a0403a04 | |
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Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsq03a0603a06 | |
TL113
Abstract: tl 113
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nsh03a0903a09150getl113+1 | |
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Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsq03a0603a06 | |
TL112Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsh03a103a10nsh03a10tl112 | |
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Contextual Info: SBD Type:NSH NSH03A09 03A09 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsh03a0903a09 | |
MCH3456
Abstract: MCH5826 SS05015SH
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mch5826enn8163mch3456ss05015sh | |
03A04Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsq03a0403a04 | |
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Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
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nsh03a103a10nsh03a10 | |
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Contextual Info: Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Features Package Dimensions • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating |
OCR Scan |
enn6091cph5702cph3209sb07-03c+1 | |
CPH5802Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004) |
OCR Scan |
enn6899cph5802ch3306sbs004 | |
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Contextual Info: SBD Type:11DQ06 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g |
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type11dq0611dq06 | |
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11DQ04Contextual Info: SBD Type:11DQ04 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g |
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type11dq0411dq04 | |
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Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings |
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typefsh05a20bfsh05a20bfsh05a2020mvrms+1 | |
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Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings |
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typefsh05a20bfsh05a20bfsh05a2020mvrms+1 | |
mch3412
Abstract: ta3173 DIODE MARKING 3173 TA-317
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enn6981cph5805mch3412sbs006+3 | |
MCH5702
Abstract: MCH6201 SBS006
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enn7076mch5702mch6201sbs006 | |
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Contextual Info: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting. |
OCR Scan |
fp3032sd1623sb05-05cp | |
ENN8206
Abstract: CPH5810 MCH3312
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cph5810enn8206mch3312sbs001 | |
ss1001
Abstract: MCH3445 MCH5812 SS10015M
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mch5812enn7998mch3445ss10015m+1 | |
CPH5808
Abstract: MCH3409 SBS004 77705
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cph5808enn7770mch3409sbs004+1 | |
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Contextual Info: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503) |
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sch2819enn8291sch1419ss0503+1 | |