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    SBD DIODE S Search Results

    SBD DIODE S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet

    SBD DIODE S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Part Number List Characteristics Quick Reference Guide SBD for Power SBD for Small Current Explanation 1. Introduction 2. Schottky barrier diode SBD 3. 4. 5. 6. Comparison of SBD and FRD Leakage current and surge tolerance of SBD How to select SBD Basic electric characteristics of SBD


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    Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)


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    sch2805enn7760mch3314sb0105+1sch2805/d PDF

    Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsq03a0403a04 PDF

    Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsq03a0603a06 PDF

    TL113

    Abstract: tl 113
    Contextual Info: SBD Type:NSH NSH03A09 03A09 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsh03a0903a09150getl113+1tl 113 PDF

    Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsq03a0603a06 PDF

    TL112

    Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsh03a103a10nsh03a10tl112 PDF

    Contextual Info: SBD Type:NSH NSH03A09 03A09 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsh03a0903a09 PDF

    MCH3456

    Abstract: MCH5826 SS05015SH
    Contextual Info: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)


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    mch5826enn8163mch3456ss05015sh PDF

    03A04

    Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsq03a0403a04 PDF

    Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    nsh03a103a10nsh03a10 PDF

    Contextual Info: Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Features Package Dimensions • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating


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    enn6091cph5702cph3209sb07-03c+1stbs200 PDF

    CPH5802

    Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)


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    enn6899cph5802ch3306sbs004 PDF

    Contextual Info: SBD Type:11DQ06 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g


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    type11dq0611dq06 PDF

    11DQ04

    Contextual Info: SBD Type:11DQ04 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g


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    type11dq0411dq04 PDF

    Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    typefsh05a20bfsh05a20bfsh05a2020mvrms+1100khz PDF

    Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    typefsh05a20bfsh05a20bfsh05a2020mvrms+1100khz PDF

    mch3412

    Abstract: ta3173 DIODE MARKING 3173 TA-317
    Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)


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    enn6981cph5805mch3412sbs006+3ta3173diode marking 3173ta-317 PDF

    MCH5702

    Abstract: MCH6201 SBS006
    Contextual Info: Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating


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    enn7076mch5702mch6201sbs006 PDF

    Contextual Info: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.


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    fp3032sd1623sb05-05cp PDF

    ENN8206

    Abstract: CPH5810 MCH3312
    Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)


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    cph5810enn8206mch3312sbs001 PDF

    ss1001

    Abstract: MCH3445 MCH5812 SS10015M
    Contextual Info: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)


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    mch5812enn7998mch3445ss10015m+1ss1001 PDF

    CPH5808

    Abstract: MCH3409 SBS004 77705
    Contextual Info: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained


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    cph5808enn7770mch3409sbs004+177705 PDF

    Contextual Info: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)


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    sch2819enn8291sch1419ss0503+1sch2819/d PDF