SBD DIODE S Search Results
SBD DIODE S Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG800FXF1ZMS3 |
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD | Datasheet | ||
| CEZ6V8 |
|
Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
|
Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
|
Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
|
Zener Diode, 6.8 V, USC | Datasheet |
SBD DIODE S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Part Number List Characteristics Quick Reference Guide SBD for Power SBD for Small Current Explanation 1. Introduction 2. Schottky barrier diode SBD 3. 4. 5. 6. Comparison of SBD and FRD Leakage current and surge tolerance of SBD How to select SBD Basic electric characteristics of SBD |
Original |
||
|
Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
Original |
NSQ03A04 03A04 NSQ03A04 | |
|
Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
Original |
NSQ03A06 03A06 NSQ03A06 | |
TL113
Abstract: tl 113
|
Original |
NSH03A09 03A09 NSH03A09 150ge TL113 tl 113 | |
|
Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
Original |
NSQ03A06 03A06 NSQ03A06 | |
03A04Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
Original |
NSQ03A04 03A04 NSQ03A04 03A04 | |
|
Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark |
Original |
NSH03A1 03A10 NSH03A10 | |
|
Contextual Info: Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Features Package Dimensions • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating |
OCR Scan |
ENN6091 CPH5702 CPH5702 CPH3209 SB07-03C, CPH5702] STbS200 | |
11DQ04Contextual Info: SBD Type:11DQ04 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g |
Original |
Type11DQ04 11DQ04 11DQ04 | |
|
Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings |
Original |
TypeFSH05A20B FSH05A20B FSH05A20 20mVRMS 100kHz | |
|
Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings |
Original |
TypeFSH05A20B FSH05A20B FSH05A20 20mVRMS 100kHz | |
|
Contextual Info: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting. |
OCR Scan |
FP303 2SD1623 SB05-05CP, | |
SCH1412
Abstract: SCH2808
|
Original |
SCH2808 ENN8360 SCH1412) SS0503) SCH1412 SCH2808 | |
|
Contextual Info: SBD 11DQ09 Type: •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g |
Original |
11DQ09 | |
|
|
|||
|
Contextual Info: 20A 200V SBD Type:FRH20A20 •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode アノード コモン型 用途 :高周波整流用 Application : High Frequency Rectification |
Original |
TypeFRH20A20 FRH20A20 20mVRMS 100kHz | |
FCH20A20Contextual Info: 20A 200V SBD Type:FCH20A20 •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode カソード コモン型 用途 :高周波整流用 Application : High Frequency Rectification |
Original |
TypeFCH20A20 FCH20A20 20mVRMS 100kHz FCH20A20 | |
fch20a20Contextual Info: 20A 200V SBD Type:FCH20A20 •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode カソード コモン型 用途 :高周波整流用 Application : High Frequency Rectification |
Original |
TypeFCH20A20 FCH20A20 20mVRMS 100kHz fch20a20 | |
|
Contextual Info: 10A 200V SBD Type:FRH10A20 •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode アノード コモン型 用途 :高周波整流用 Application : High Frequency Rectification |
Original |
TypeFRH10A20 FRH10A20 20mVRMS 100kHz | |
|
Contextual Info: SBD 構 Type:11EQS03L •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings |
Original |
Type11EQS03L 11EQS03L | |
|
Contextual Info: SBD 構 Type:11EQS06 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings |
Original |
Type11EQS06 11EQS06 | |
|
Contextual Info: SBD 構 Type:11EQS10 •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 :高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings |
Original |
Type11EQS10 11EQS10 | |
|
Contextual Info: 10A 200V SBD Type:FSH10A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings |
Original |
TypeFSH10A20B FSH10A20B FSH10A20 20mVRMS 100kHz | |
|
Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171 |
Original |
ENN6980 CPH5804 MCH3312) SBS006M) CPH5804] | |
TA-3176
Abstract: marking QB MCH3308 MCH5802 SBS006M
|
Original |
ENN6961 MCH5802 MCH3308) SBS006M) MCH5802] TA-3176 marking QB MCH3308 MCH5802 SBS006M | |