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    SBD DIODE S Search Results

    SBD DIODE S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet

    SBD DIODE S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Part Number List Characteristics Quick Reference Guide SBD for Power SBD for Small Current Explanation 1. Introduction 2. Schottky barrier diode SBD 3. 4. 5. 6. Comparison of SBD and FRD Leakage current and surge tolerance of SBD How to select SBD Basic electric characteristics of SBD


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    PDF

    Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)


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    SCH2805 ENN7760 MCH3314) SB0105) SCH2805/D PDF

    Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSQ03A04 03A04 NSQ03A04 PDF

    Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSQ03A06 03A06 NSQ03A06 PDF

    TL113

    Abstract: tl 113
    Contextual Info: SBD Type:NSH NSH03A09 03A09 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSH03A09 03A09 NSH03A09 150ge TL113 tl 113 PDF

    Contextual Info: SBD Type:NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSQ03A06 03A06 NSQ03A06 PDF

    TL112

    Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSH03A1 03A10 NSH03A10 TL112 PDF

    Contextual Info: SBD Type:NSH NSH03A09 03A09 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSH03A09 03A09 NSH03A09 PDF

    MCH3456

    Abstract: MCH5826 SS05015SH
    Contextual Info: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)


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    MCH5826 ENN8163 MCH3456) SS05015SH) MCH3456 MCH5826 SS05015SH PDF

    03A04

    Contextual Info: SBD Type:NSQ NSQ03A04 03A04 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSQ03A04 03A04 NSQ03A04 03A04 PDF

    Contextual Info: SBD Type:NSH NSH03A1 03A10 •OUTLINE DRAWING 構造 : 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification cathode mark


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    NSH03A1 03A10 NSH03A10 PDF

    Contextual Info: Ordering number:ENN6091 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5702 DC/DC Converter Applications Features Package Dimensions • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating


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    ENN6091 CPH5702 CPH5702 CPH3209 SB07-03C, CPH5702] STbS200 PDF

    CPH5802

    Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)


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    ENN6899 CPH5802 CH3306) SBS004) CPH5802] PDF

    Contextual Info: SBD Type:11DQ06 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g


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    Type11DQ06 11DQ06 PDF

    11DQ04

    Contextual Info: SBD Type:11DQ04 •OUTLINE DRAWING 構造 :ショットキ・バリア・ダイオード SBD リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用途 :高周波整流用 Application: High Frequency Rectification Approx Net Weight:0.32g


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    Type11DQ04 11DQ04 11DQ04 PDF

    Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    TypeFSH05A20B FSH05A20B FSH05A20 20mVRMS 100kHz PDF

    Contextual Info: 5A 200V SBD Type:FSH05A20B •OUTLINE DRAWING 構造 : ショットキーバリアダイオード SBD Construction: Schottky barrier Diode 用途 :高周波整流用 Application : High Frequency Rectification ■最大定格 / Maximum Ratings


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    TypeFSH05A20B FSH05A20B FSH05A20 20mVRMS 100kHz PDF

    mch3412

    Abstract: ta3173 DIODE MARKING 3173 TA-317
    Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)


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    ENN6981 CPH5805 MCH3412) SBS006) CPH5805] mch3412 ta3173 DIODE MARKING 3173 TA-317 PDF

    MCH5702

    Abstract: MCH6201 SBS006
    Contextual Info: Ordering number : ENN7076 MCH5702 TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode MCH5702 DC / DC Converter Applications • Composite type with an NPN transistor and a Schottky unit : mm barrier diode contained in one package facilitating


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    ENN7076 MCH5702 MCH5702 MCH6201 SBS006, MCH5702] SBS006 PDF

    Contextual Info: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.


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    FP303 2SD1623 SB05-05CP, PDF

    ENN8206

    Abstract: CPH5810 MCH3312
    Contextual Info: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)


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    CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312 PDF

    ss1001

    Abstract: MCH3445 MCH5812 SS10015M
    Contextual Info: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)


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    MCH5812 ENN7998 MCH3445) SS10015M) ss1001 MCH3445 MCH5812 SS10015M PDF

    CPH5808

    Abstract: MCH3409 SBS004 77705
    Contextual Info: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained


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    CPH5808 ENN7770 MCH3409) SBS004) CPH5808 MCH3409 SBS004 77705 PDF

    Contextual Info: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)


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    SCH2819 ENN8291 SCH1419) SS0503) SCH2819/D PDF