SBD DIODE MARKING S Search Results

ks2152

Abstract: FMKS-2152
Contextual Info: SANKEN ELECTRIC CO., LTD. FMKS-2152 １ Scope The present specifications shall apply to Sanken silicon diode, FMKS-2152. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification，etc. FRD and SBD for temperature detection in a single package.

KS2102

Abstract: FMKS-2102
Contextual Info: SANKEN ELECTRIC CO., LTD. FMKS-2102 １ Scope The present specifications shall apply to Sanken silicon diode, FMKS-2102. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification, etc. FRD and SBD for temperature detection in a single package.

D30XBN20

Abstract: d30xb
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D30XBN20 Unit : mm Weight : 7.1g （typ.） Package：5S 200V 30A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

D4SBN20

Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D4SBN20 Unit : mm Weight : 3.9g （typ.） Package：3S 200V 4A 管理番号（例） Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • SBD ブリッジ

D6SBN20

Abstract: a3120 3120A
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D6SBN20 Unit : mm Weight : 6.3g （typ.） Package：5S 200V 6A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

D15XBN20

Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D15XBN20 Unit : mm Weight : 7.1g （typ.） Package：5S 200V 15A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

DIODE marking S4 45

Abstract: D10SBS4 s4 35 diode marking code
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D10SBS4 Unit : mm Weight : 3.9g （typ.） Package：3S 40V 10A 管理番号（例） Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • SBD ブリッジ

D15XBS6

Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D15XBS6 Unit : mm Weight : 4.4g （typ.） Package：3S 60V 15A 管理番号（例） Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • SBD ブリッジ

D4SB S4

Abstract: DIODE marking S4 45 DIODE marking S4 05 DIODE d4sb
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D4SBS4 Unit : mm Weight : 3.9g （typ.） Package：3S 40V 4A 管理番号（例） Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • SBD ブリッジ

D20XBS6

Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D20XBS6 Unit : mm Weight : 7.4g （typ.） Package：5S 60V 20A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 30 • 薄型 SIP パッケージ

catalog of AC bridge

Abstract: S6 MARKING CODE DIODE D4SB DIODE marking S6
Contextual Info: シングルインライン型 SBD Bridge Single In-line Package •外観図 OUTLINE D4SBS6 Unit : mm Weight : 3.9g （typ.） Package：3S 60V 4A 管理番号（例） Control No. 品名 Type No. 特長 ロット記号（例） 4.6 Date code 25 • 薄型 SIP パッケージ

2SK146

Contextual Info: Ordering num ber: EN4892 _ FX852 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications Features • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching and Iow-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates

MCH3408

Abstract: MCH5803 SBS006M
Contextual Info: Ordering number : ENN6958 MCH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2195

MCH3408

Abstract: MCH5804 SBS007M IT03104 IT03105
Contextual Info: Ordering number : ENN6942 MCH5804 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5804 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS007M) 2195

Contextual Info: SCH2809 SCH2809 Features • • • Ordering number : ENA0446 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET SCH1305 and a Schottky barrier diode (SBS018) contained

Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)

TA-3176

Abstract: marking QB MCH3308 MCH5802 SBS006M
Contextual Info: Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2195

SCH1412

Abstract: SCH2808
Contextual Info: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)

CPH5808

Abstract: MCH3409 SBS004 77705
Contextual Info: CPH5808 Ordering number : ENN7770 CPH5808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a N-Channel Silicon MOSFET MCH3409 and a Schottky Barrier Diode (SBS004) contained

CPH5803

Abstract: TA-3101 MCH3405 SBS004M marking QD
Contextual Info: Ordering number : ENN6935 CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5803 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3405 and a Schottky Barrier Diode (SBS004M) 2171

2SJ416

Abstract: FX856 SB07-03P 53723
Contextual Info: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One

MCH3314

Abstract: MCH5805 SB01-05
Contextual Info: Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Package Dimensions unit : mm 2195 0.25 [MCH5805] 0.15 0.3 5 3 2 0.65 1 0.07 1.6 4 0.25 Composite type with a P-channel sillicon MOSFET

86886

Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Contextual Info: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)

CPH5811

Abstract: MCH3406 SBS004 2171A marking QM
Contextual Info: CPH5811 Ordering number : ENN8234 CPH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3406 and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting.