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SBA-3
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Synergy Microwave
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Silicon Bipolar Monolithic Amplifier |
Original |
PDF
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31.4KB |
2 |
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SBA320AFC-AU_R1_000A1
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PanJit Group
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SMAF-C, SKY |
Original |
PDF
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456.98KB |
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SBA320AL_R1_00001
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Panjit International
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DIODE SCHOTTKY 20V 3A SOD123FL |
Original |
PDF
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143.15KB |
5 |
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SBA330AFC_R1_00001
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PanJit Group
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SMAF-C, SKY |
Original |
PDF
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468.87KB |
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SBA330AH_R1_00001
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PanJit Group
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SOD-123HE, SKY |
Original |
PDF
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221.39KB |
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SBA330AL_R1_00001
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Panjit International
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DIODE SCHOTTKY 30V 3A SOD123FL |
Original |
PDF
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143.15KB |
5 |
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SBA340AFC-AU_R1_000A1
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PanJit Group
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SMAF-C, SKY |
Original |
PDF
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456.98KB |
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SBA340AFC_R1_00001
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PanJit Group
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SMAF-C, SKY |
Original |
PDF
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468.87KB |
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SBA340AH-AU_R1_000A1
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PanJit Group
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SOD-123HE, SKY |
Original |
PDF
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182.94KB |
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SBA340AH_R1_00001
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PanJit Group
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SOD-123HE, SKY |
Original |
PDF
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221.39KB |
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SBA340AL_R1_00001
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PanJit Group
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SOD-123FL, SKY |
Original |
PDF
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160.73KB |
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SBA350-1
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Panduit
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Accessories, Hardware, Fasteners, Accessories, SPLIT BOLT ALUM 350 KCMIL #4 STR |
Original |
PDF
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1 |
HSBA3048
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Huashuo Semiconductor
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N-channel 30V fast switching MOSFET with 100A continuous drain current, 1.3mΩ typical RDS(ON), low gate charge, and high current capability in a PRPAK5x6 package. |
Original |
PDF
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HSBA3031
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Huashuo Semiconductor
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P-Ch 30V MOSFET with -70A continuous drain current, 7.2mΩ RDS(ON), high cell density trench technology, suitable for synchronous buck converters, available in PRPAK5x6 package. |
Original |
PDF
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HSBA3004
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Huashuo Semiconductor
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N-channel 30V fast switching MOSFET with 58A continuous drain current, 8.5mΩ RDS(ON) max, featuring high cell density trench technology, low gate charge, and 100% EAS tested for reliability in power management applications. |
Original |
PDF
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HSBA3018B
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Huashuo Semiconductor
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N-Ch 30V Fast Switching MOSFET with 2 mΩ RDS(ON), 85A continuous drain current, super low gate charge, and 100% EAS tested, suitable for synchronous buck converters. |
Original |
PDF
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HSBA3050
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Huashuo Semiconductor
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N-channel 30V fast switching MOSFET with 75A continuous drain current, 3mΩ typical RDS(ON), low gate charge, and 50W power dissipation in a PRPAK 5x6 package. |
Original |
PDF
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HSBA3006
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Huashuo Semiconductor
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N-Ch 30V Fast Switching MOSFET with 81A continuous drain current, 5.5mΩ RDS(ON), low gate charge, and 100% EAS tested for reliable power conversion applications. |
Original |
PDF
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HSBA3202
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Huashuo Semiconductor
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Dual N-Ch 30V MOSFET in PRPAK5x6 package with 35A continuous drain current, 15mΩ RDS(ON) at 10V VGS, featuring low gate charge and high cell density trench technology for efficient power conversion. |
Original |
PDF
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HSBA3014
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Huashuo Semiconductor
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N-Ch 30V Fast Switching MOSFET with 150 A continuous drain current, 12 mΩ RDS(ON), high cell density trench technology, suitable for synchronous buck converters, available in PRPAK 5x6 package. |
Original |
PDF
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HSBA3048
