SAN ACE 120 G TYPE Search Results

9GV1248P4G01

Abstract: San Ace 120 9GV1212P4G01 Frequency25kHz 30PPI 109-019C 109-019H 109-1000G 9GV1224P4G01 Wire ul1007
Contextual Info: DC Fan 120 San Ace 120 25mm thick GV type , 25mm thick (G type) 38mm thick (GV type),38mm thick (G type) 38mm thick (SG type) mm sq. • General Specifications With a pulse sensor Specifications for pulse sensors With PWM speed control function Refer to Page 291

San Ace 120

Abstract: 9GV1224P1H01
Contextual Info: DC Fan 120 San Ace 120 25mm thick G type , 38mm thick (GV type) 38mm thick (G type), 38mm thick (SG type) mm sq. • General Specifications With a pulse sensor Specifications for pulse sensors With PWM speed control function Refer to Page 297 Refer to Page 299

San Ace 120

Abstract: 9GV1212P1J01 109-019C 109-019E 109-019H 109-019K 109-1000G 109-1000F40 109-1000F20 9GV1248P1J01
Contextual Info: DC Fan 120 San Ace 120 25mm thick G type , 38mm thick (GV type) 38mm thick (G type), 38mm thick (SG type) mm sq. • General Specifications With a pulse sensor Specifications for pulse sensors With PWM speed control function Refer to Page 291 Refer to Page 293

San Ace 120

Abstract: 120PWM PWM 12V fan speed control San Ace 60 pwm PWM 12V fan speed control circuit
Contextual Info: DC Fan 120 San Ace 120 mm sq. 25mm thick G type , 38mm thick (GV type) 38mm thick (G type), 38mm thick (SG type) • General Specifications With a pulse sensor Specifications for pulse sensors Refer to Page 261 With PWM speed control function ・Material …………………… Frame: Plastics (Flammability: UL94V-0),

San Ace 120

Abstract: PWM 12V fan speed control circuit 300-CFM
Contextual Info: DC Fan 120 San Ace 120 mm sq. 25mm thick G type , 38mm thick (GV type) 38mm thick (G type), 38mm thick (SG type) • General Specifications With a pulse sensor Specifications for pulse sensors Refer to Page 307 With PWM speed control function ・Material …………………… Frame: Plastics (Flammability: UL94V-0),

heat sensor with fan cooling using ic LM 741

Abstract: 9GV0412P3 smr 40100 San Ace 120L 109R0624J402 109R1212H101 121 M 221 03 9cr0412s sanyo denki brushless p3 Sanyo Denki dc fan 109r0612t4h12
Contextual Info: COOLING SYSTEM San Ace Products Information 2006 ver.2 C O N T E N T S Technical Material ･････････････････････ p.3 Product Guide Instruction Manual for Fan ‥‥‥‥‥ p.20 Part Numbering System ‥‥‥‥‥‥ p.22

5mhz crystal oscillator

Abstract: Crystal oscillator 12 MHz Specification Quartz Crystals 6 Mhz MK3711 MK3711A MK3711ATR MK3711B MK3711BTR MK3711D MK3711DTR
Contextual Info: MK3711 LOW COST 8 - 16 MHZ 3.3 VOLT VCXO Description The MK3711 series of devices include the original MK3711S, MK3711A, and the new MK3711B and MK3711D. The MK3711D and MK3711B are drop-in replacements for the MK3711S and MK3711A devices. Compared to these earlier devices the MK3711D and

crystal oscillator 11.0592 mhz

Abstract: 2 pin crystal oscillator 11.0592 mhz 11.0592 CRYSTAL MK3712 MK3712D MK3712DTR crystal quartz 11.0592 MHz IC CLOCK OSCILLATOR 25PPM
Contextual Info: MK3712 3.3 VOLT SET-TOP BOX VCXO Description The MK3712 series of devices includes the original MK3712S and the new MK3712D. The MK3712D is a drop-in replacement for the MK3712S device. Compared to the earlier device, the MK3712D offers improved power supply noise rejection.

San Ace 40

Abstract: 109P0424H601 109p0424 109p0424h 109P0405J601 109P0412D601 109p0412 109P0412H601 Wire ul1007 sanace40
Contextual Info: DC Fan 40 San Ace 40 10mm thick, 15mm thick, 20mm thick 28mm thick GE type 28mm thick (GV type), 28mm thick mm sq. • General Specifications With a pulse sensor Specifications for pulse sensors Refer to Page 261 ・Material …………………… Frame: Plastics (Flammability: UL94V-0),

MX16C450

Abstract: MX82C50A Macronix marking MX82C50 mx83c
Contextual Info: MACRONIX INC S3E » SbûflêôS Q O G G M G G M X 16C 450 - M X 82C 50A - M X 82C 50 m b74 • HA C X A ~T~ 7 S '- 3 7~ 0 5 ASYNCHRONOUS COMMUNICATIONS ELEMENT FEATURES DESCRIPTION • Easily interfaces to most popular microprocessors • Adds or deletes standard

Contextual Info: V62C3802096L L Ultra Low Power 256K x 8 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA CMOS input/output, L version The V62C3802096L is a low power CMOS Static RAM organized as 262,144 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, an active HIGH CE2, an active LOW OE , and Tri-state I/O’s. This device has an automatic power-down mode feature when deselected.

Contextual Info: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged

Contextual Info: HITACHI/ MCU/MPU ^2 I>e | 44TL204 □ Q l E 3 0 b 5 -4TÔ6 2 Ö 4 H 1 iACH i / M C U /M P U 92D 12306 dH HD63085-—-—T-53-333bDI CEP Document Image Compression and Expansion Processor PRELIM INARY- The HD63085 (DICEP) is a LSI th a t compresses (or encodes)

317Q

Abstract: A10C A12C A14C CY7C1199
Contextual Info: p y j r PRELIMINARY n n I? Q c I 1 i l l l D D CY7C1199 32K Features X 8 Static RAM three-state drivers. This device has an automatic power-down feature, that reduces the power consumption significantly when deselected. • High speed — 15 ns tAA • Single 5V power supply with 3.3V-compatible l/Os

850C

Abstract: V62C2801024L V62C2801024L-100T V62C2801024L-70T V62C2801024L-85T
Contextual Info: V62C2801024L L Ultra Low Power 128K x 8 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 25mA at 70ns - Stand-by: 5 µA (CMOS input/output) 1 µA CMOS input/output, L version TheV62C2801024L is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is

Contextual Info: V62C1162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162096L is a Low Power CMOS Static

Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM Features • Highspeed — 10 ns • Fast tpoE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

Contextual Info: fax id: 1079 CY62148 512K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Featu res • 4.5V -5.5V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable

850C

Abstract: V62C3801024L V62C3801024L-55T V62C3801024L-70T
Contextual Info: V62C3801024L L Ultra Low Power 128K x 8 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 30mA at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA CMOS input/output, L version The V62C3801024L is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is

CI PT 2313

Contextual Info: V62C2802096L L Ultra Low Power 256K x 8 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA at 55ns - Stand-by: 10 µA (CMOS input/output) 2 µA CMOS input/output, L version The V62C2802096L is a low power CMOS Static RAM

p13ab

Contextual Info: .»•WMMlUAv. SS ^777777^^^^^"^ •WWWWWWWJK^' . v , '*v^ CY7C197 ÿfp?' 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected.

HA 13645

Contextual Info: fax id: 5201 CY7C132/CY7C136 CY7C142/CY7C146 2Kx8 Dual-Port Static RAM Featu res Functional Description • True Dual-Ported memory cells which allow sim ulta­ neous reads of the same memory location • 2K x 8 organization • 0.65-micron CMOS for optimum speed/power

Contextual Info: PRELIMINARY CY7C1512 64K x 8 Static RAM Features and three-state drivers. This device has an automatic pow­ er-down feature that reduces power consumption by more than 75% when deselected. • High speed — tAA = 15ns Writing to the device is accomplished by taking chip enable

Contextual Info: _ CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • C M O S fo r o p tim u m sp ee d /p o w e r T he C Y 7C 266 is a hig h -p e rfo rm a n ce 8192 w o rd by 8 bit C M O S PRO M . W hen de selected , th e C Y 7C 266 a u to m a tica lly