SAMSUNG CMOS DRAM 4M X 4 Search Results

Contextual Info: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM

KM41C4000A

Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7 ^ 4 1 4 2 00144^4 031 « S A C K KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung

Contextual Info: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULE KMM364V400AK/AS KMM364V400AK/AS Fast Page Mode 4Mx64 DRAM DIMM, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V400A is a 4M bit x 64 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM364V400A consists of sixteen CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its

Contextual Info: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS

Contextual Info: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in

Contextual Info: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii

Contextual Info: KMM364V41OAK/AS DRAM MODULE KMM364V41 OAK/AS Fast Page Mode 4Mx64 DRAM DIMM , 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V410A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V410A consists of sixteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-JI 300mil packages

Contextual Info: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Jun 1999 KM416S16230A CMOS SDRAM Revision History

K4S561632C-TC/L75

Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History

Contextual Info: DRAM MODULE KMM364C40 8 4BS KMM364C40(8)4BS Fast Page Mode 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C40(8)4B consists of four CMOS 4Mx16bits DRAMs

KM41C4000A

Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E D OOmSET 7^4142 1 ÖD « S h l G K DRAM MODULES KMM594020A 4M X 9 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020A is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM Extended Temp Support 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM

K4S561632C

Abstract: k4s561632
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Industrial Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S561632C CMOS SDRAM

k4s280832D-ti

Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM Industrial Temp Support 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM

K4S561632C

Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM

Contextual Info: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its

K4S561632C

Abstract: K4S561632C-TB75 k4s561632c-tb7c 2CLK
Contextual Info: K4S561632C CMOS SDRAM 256Mbit SDRAM Super low power 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S561632C CMOS SDRAM Revision History

K4S280832

Abstract: 133Mhz K4S280832D
Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM Revision History Revision 0.0 Mar., 2001

K4S561632D

Contextual Info: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 May., 2002

Contextual Info: K4S640432F CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432F CMOS SDRAM Revision History Revision 0.0 June, 2001

k4s561632d-tl

Abstract: K4S561632D
Contextual Info: K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Jan. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2002 K4S561632D CMOS SDRAM Revision History Revision 0.0 Jan., 2002