SA3026 Search Results

80c85

Abstract: IC 8212 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH intersil 8212 CERAMIC FLATPACK
Contextual Info: HS-82C12RH Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan

5962R9581801QJC

Abstract: 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 108RAD
Contextual Info: HS-82C12RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

8212 latch

Abstract: 5962R9581801QJC 5962R9581801QXC 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH 17D06
Contextual Info: HS-82C12RH Semiconductor Radiation Hardened March 1996 8' Bit Input/O utput POU Functional Diagram Features • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

Contextual Info: a HS-82C12RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port September 1995 Functional Diagram Features • Radiation Hardened CMOS Process - Total Dose 1 x 105 RAD Si - Transient Upset > 1 x 108 RAD (Si)/s - Latch-Up Immune EPI-CMOS > 1 x 1012 RAD (Si)/s

intersil 8212

Abstract: IC 8212 sa302 5962R9581801QJC 5962R9581801QXC 5962R9581801V9A 5962R9581801VJC 5962R9581801VXC HS-80C85RH HS-82C12RH
Contextual Info: HS-82C12RH TM Data Sheet August 2000 Radiation Hardened 8-Bit Input/Output Port The Intersil HS-82C12RH is a radiation hardened 8-bit input/output port designed for use with the HS-80C85RH radiation hardened microprocessor. It is manufactured using a self-aligned, junction-isolated EPI-CMOS process and

Contextual Info: H A R R HS-82C12RH IS S E M I C O N D U C T O R Radiation Hardened 8-Bit Input/Output Port December 1992 Pinouts Features • Radiation Hardened CMOS Process - Total Dose 1 x 10s RAD Si - Transient Upset > 1 x 108 RAD(SI)/s - Latch-Up Immune EPI-CMOS > 1 x 1012 RAD(Siys

BED02

Abstract: C151C
Contextual Info: HS-82C12RH HARRIS SEMICONDUCTOR Radiation Hardened 8-Bit Input/Output Port December 1992 Features Pinouts • Radiation Hardened CMOS Process - Total Dose 1 x 10s RAD Si - Transient Upset > 1 x 10® RAD(Siys - Latch-Up Immune EPI-CMOS > 1 x 1012 RAD(Siys

harris 8212

Contextual Info: 33 H A R R HS-82C12RH Radiation Hardened 8' Bît Input/Output Port March 1996 Features • Functional Diagram Devices QML Qualified in Accordance with MIL-PRF-38535 DS1 » • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Harris’ QM Plan

108RAD

Contextual Info: HS-82C12RH h a r r is È S E M I C O N D U C T O R U È Ê • È Ë Radiation Hardened 8-Bit Input/Output Port March 1996 Features Functional Diagram • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are