SA29 PINOUT Search Results

AM29F040B date code marking information

Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Contextual Info: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _

AM29DL164CB

Abstract: F0000H-F7FFFH F8000H-FFFFFH sa37 D8000H-DFFFFH B8000H-BFFFFH 10001XXX 00000H-07FFFH 030000H-03FFFFH 11000XXX
Contextual Info: SUPPLEMENT ADVANCE INFORMATION Am29DL164C Data Sheet Supplement This supplement is for use with the Am29DL162/ Am29DL163C data sheet, publication number 21533. This document contains information on ordering part numbers, device bank division, and sector configuration. For all other specifications, refer to the data sheet.

6b90

Contextual Info: FLASH MEMORY CMOS 1 6 M 2 M X 8 BIT M M L .V Ö 16 B - 9 0 - 1 2 FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs • Compatible with JED EC-standard world-wide pinouts

Contextual Info: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F016 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

FPT-48P-M19

Abstract: FPT-48P-M20 SA10 SA11 SA12 222eh 222DH 222BH BD703 mbm29dl16xtd
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD-70/-90/-12/MBM29DL16XBD-70/-90/-12 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

diagram qualcomm

Abstract: QUALCOMM Reference design qualcomm temperature QUALCOMM BGA block diagram of qualcomm PM Qualcomm FPT-48P-M19 FPT-48P-M20 SA10 qualcomm aT commands
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET Qualcomm only 2.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DD16XTD-90/MBM29DD16XBD-90 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

sa29 pinout

Abstract: FPT-48P-M19 FPT-48P-M20 SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DD16XTD-10/MBM29DD16XBD-10 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

BGA-48P-M13

Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

DS05-20874-4E

Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

1820-1940

Abstract: BGA-48P-M13 DS05-20874-7E FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”

BGA-48P-M13

Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”

222DH

Abstract: SKB 7 02 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY M l l l 16M 2M X 8/1M X 16 BIT

mbm29dl16xtd

Contextual Info: MBM29DL16XTD -70/90 MBM29DL16XBD -70/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

DS05-20880-1E

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

1820-1940

Abstract: DS05-20874-7E mbm29dl16xtd
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

sa29 pinout

Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
Contextual Info: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

DIODE marking A19

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: MBM29DL16XTE/BE70/90 Data Sheet Retired Product MBM29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes