2SA1162
|
|
AK Semiconductor
|
PNP transistor in SOT-23 package with -50V collector-emitter voltage, -150mA continuous collector current, high DC current gain (70-400), low noise (1dB typ), and 150mW power dissipation. |
Original |
PDF
|
|
|
|
2SA1162(RANGE:120-240)
|
|
JCET Group
|
PNP transistor in SOT-23 package with 50 V collector-base and collector-emitter breakdown voltage, 150 mA collector current, 150 mW power dissipation, DC current gain from 70 to 400, 80 MHz transition frequency, and low noise figure of 10 dB. |
Original |
PDF
|
|
|
|
2SA1162Y
|
|
JCET Group
|
PNP transistor in SOT-23 package with 50 V collector-base and collector-emitter breakdown voltage, 150 mA collector current, 150 mW power dissipation, DC current gain from 70 to 400, and transition frequency of 80 MHz. |
Original |
PDF
|
|
|
|
2SA1162
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-23 package, rated for -50V collector-base and collector-emitter voltage, -150mA collector current, 150mW power dissipation, with DC current gain up to 400 and transition frequency of 80MHz. |
Original |
PDF
|
|
|
|
2SA1162GR
|
|
JCET Group
|
PNP transistor in SOT-23 package with 50 V collector-base and collector-emitter breakdown voltage, 150 mA collector current, 150 mW power dissipation, DC current gain from 70 to 400, and transition frequency of 80 MHz. |
Original |
PDF
|
|
|
|
2SA1162(RANGE:200-400)
|
|
JCET Group
|
PNP transistor in SOT-23 package with -50V collector-base and collector-emitter voltage, -150mA continuous collector current, 150mW power dissipation, DC current gain from 70 to 400, and transition frequency of 80MHz. |
Original |
PDF
|
|
|
|
2SA1162-GR
|
|
Shikues Semiconductor
|
Low noise: NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. General purpose application. |
Original |
PDF
|
|
|
2SA1162
