SA1162 Search Results
SA1162 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SA1162 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-0.15 A / hFE=70~400 / VCE(sat)=-0.3 V / AEC-Q101 / SOT-346 | Datasheet |
SA1162 Datasheets (7)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
2SA1162(RANGE:120-240)
|
JCET Group | PNP transistor in SOT-23 package with 50 V collector-base and collector-emitter breakdown voltage, 150 mA collector current, 150 mW power dissipation, DC current gain from 70 to 400, 80 MHz transition frequency, and low noise figure of 10 dB. | Original | ||||
2SA1162
|
AK Semiconductor | PNP transistor in SOT-23 package with -50V collector-emitter voltage, -150mA continuous collector current, high DC current gain (70-400), low noise (1dB typ), and 150mW power dissipation. | Original | ||||
2SA1162Y
|
JCET Group | PNP transistor in SOT-23 package with 50 V collector-base and collector-emitter breakdown voltage, 150 mA collector current, 150 mW power dissipation, DC current gain from 70 to 400, and transition frequency of 80 MHz. | Original | ||||
2SA1162
|
Shenzhen Heketai Electronics Co Ltd | PNP bipolar transistor in SOT-23 package, rated for -50V collector-base and collector-emitter voltage, -150mA collector current, 150mW power dissipation, with DC current gain up to 400 and transition frequency of 80MHz. | Original | ||||
2SA1162(RANGE:200-400)
|
JCET Group | PNP transistor in SOT-23 package with -50V collector-base and collector-emitter voltage, -150mA continuous collector current, 150mW power dissipation, DC current gain from 70 to 400, and transition frequency of 80MHz. | Original | ||||
2SA1162GR
|
JCET Group | PNP transistor in SOT-23 package with 50 V collector-base and collector-emitter breakdown voltage, 150 mA collector current, 150 mW power dissipation, DC current gain from 70 to 400, and transition frequency of 80 MHz. | Original | ||||
2SA1162-GR
|
Shikues Semiconductor | Low noise: NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. General purpose application. | Original |
SA1162 Price and Stock
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Toshiba America Electronic Components 2SA1162-O,LF- Tape and Reel (Alt: 2SA1162-O,LF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SA1162-O,LF | Tape & Reel | 9,000 | 20 Weeks | 3,000 |
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2SA1162-O,LF | 13,163 |
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2SA1162-O,LF | Reel | 3,000 |
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Toshiba America Electronic Components 2SA1162-GR,LF- Tape and Reel (Alt: 2SA1162-GR,LF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SA1162-GR,LF | Tape & Reel | 3,000 | 20 Weeks | 3,000 |
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2SA1162-GR,LF |
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Toshiba America Electronic Components 2SA1162-Y,LF- Tape and Reel (Alt: 2SA1162-Y,LF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SA1162-Y,LF | Tape & Reel | 3,000 | 20 Weeks | 3,000 |
|
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2SA1162-Y,LF | 14,288 |
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2SA1162-Y,LF | 4,539 |
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onsemi NSVMSA1162GT1GPNP Bipolar Transistor. ONSSPCTRNSTVU6M5P; - Tape and Reel (Alt: NSVMSA1162GT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSVMSA1162GT1G | Tape & Reel | 18,000 |
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| NSVMSA1162GT1G | Tape & Reel | 44 Weeks | 15,000 |
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NSVMSA1162GT1G |
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NSVMSA1162GT1G | 8,999 | 1 |
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NSVMSA1162GT1G | 1 |
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NSVMSA1162GT1G | 46 Weeks | 3,000 |
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NSVMSA1162GT1G | 162,000 |
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onsemi MSA1162GT1GPNP Bipolar Transistor hFE 200 to 400. ONSSPCTRNSTVU6M5P; - Tape and Reel (Alt: MSA1162GT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MSA1162GT1G | Tape & Reel | 37 Weeks | 48,000 |
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MSA1162GT1G | 18,064 |
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MSA1162GT1G | Tape & Reel | 5,808 | 100 |
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| MSA1162GT1G | Cut Tape | 5,808 | 5 |
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MSA1162GT1G | 101,897 | 1 |
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MSA1162GT1G | 48,000 |
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MSA1162GT1G | 38 Weeks | 3,000 |
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MSA1162GT1G | 39 Weeks | 3,000 |
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MSA1162GT1G | 123,920 |
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MSA1162GT1G |
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