S9G77A Search Results
S9G77A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S9G77A |
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FET, Microwave Power GaAs FET Transistor, ID 3.5 A | Scan | 67.83KB | 2 | ||
| S9G77A |
|
MICROWAVE POWER GaAs FET | Scan | 67.82KB | 2 |
S9G77A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TO S H IB A MICROWAVE POWER GaAs FET Partially Matched S9G77A Preliminary MICROWAVE SEMICONDUCTOR TECHNICAL DATA 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB SYMBOL Ta= 25 °C CONDITION MIN. TYP, MAX. UNIT 32.0 PidB — • dBm — |
OCR Scan |
S9G77A | |
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Contextual Info: TOSHIBA MI C RO WA V E P O W E R GaAs FET M IC RO WA VE SEMICONDUCTOR T E C H N I C A L DATA S9G77A FEATURES : • HI GH ■ PARTIALLY MATCHED POWER P idB = 33.0 dBm at 3 .7 G H z ■ HI GH ■HERMETI CALLY GAI N SEALED PACKAGE G 1dB = 10.5 dB at 3 .7 G H z |
OCR Scan |
S9G77A | |
S9G77AContextual Info: MICROWAVE POWER GaAs FET Partially Matched TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G77A Prelim inary 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB SYMBOL Ta= 25 °C CONDITION MIN. TYP, MAX. UNIT 32.0 PidB — dBm — Compression Point |
OCR Scan |
S9G77A S9G77A |