S9G08A Search Results
S9G08A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S9G08A |
|
MICROWAVE POWER GaAs FET | Scan | 164.88KB | 5 |
S9G08A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S9G08A PRELIMINARY Features • Low distortion - Padj = -7 4 dBc at Po = 38 dBm • High gain - G1dB = 13 dB • Partially matched type • Hermetically sealed package RF Performance Specifications Ta = 25°C Characteristic |
OCR Scan |
S9G08A S9G08A | |
S9G08A
Abstract: 2-16G6A
|
OCR Scan |
S9G08A 38dBm, 600kHz S9G08A 2-16G6A | |
S9G08AContextual Info: TOSHIBA S9G08A MICROWAVE POWER GaAs FET PRELIMINARY Features • Low distortion - Padj = -74 dBc at Po = 38 dBm • High gain - G1dB = 13 dB • Partially matched type • Hermetically sealed package RF Performance Specifications Ta = 25°C Characteristic |
Original |
S9G08A 2-16G6A) S9G08A |