S8265 Search Results

Contextual Info: Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 高耐湿性 85 °C, 85 %, 1000時間 屋外など湿度が高い場所での調光など 視感度補正フィルタ付 セラミックパッケージ (6 x 8 mm)

S8265

Abstract: SE-171
Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm Applications l Light dimmer in locations at high humidity or for outdoor use

Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use

0441

Abstract: S8265 S-8265
Contextual Info: PHOTODIODE Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 l 高耐湿性 85 ˚C, 85 %, 1000時間 l 視感度補正フィルタ付 l セラミックパッケージ (6 x 8 mm) l 受光面サイズ: 2.8 × 2.4 mm

Contextual Info: Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications High humidity resistance 85 °C, 85 %, 1000 h Light dimmer in locations at high humidity or for outdoor use Visible-compensation filter Ceramic package (6 x 8 mm)

transistor 1BW

Abstract: SE-171 1bw 85 S8265
Contextual Info: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

S-8265

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Si4483ADY

Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
Contextual Info: New Product Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 • • • • Qg (Typ.) 44.8 nC Halogen-free TrenchFET Power MOSFET

sis430dn

Abstract: SiS430DN-T1-GE3
Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

SIS430DN

Abstract: SiS430DN-T1-GE3
Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Si5419DU

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)