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    S8014 TRANSISTOR Search Results

    S8014 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    S8014 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    s8014 transistor

    Abstract: S8014 transistor K 14
    Contextual Info: Philips Semiconductors Product specification Silicon controlled switch DESCRIPTION BRY62 PINNING Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. PIN DESCRIPTION 1 APPLICATIONS


    OCR Scan     		OT143B BRY62 S8014 MBB581 MBB53C s8014 transistor S8014 transistor K 14 PDF

    s8014 transistor

    Contextual Info: Philips Semiconductors bLS3^31 0 0 2 4 ^ 10R • APX Product specification N AUER PHILIPS/DISCRETE L7E NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure PINNING PIN DESCRIPTION • High transition frequency


    OCR Scan     		BFG520; BFG520/X; BFG520/XR BFG520 and08 s8014 transistor PDF