S8 DIODE Search Results

O41 DIODE

Contextual Info: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8

marking s8 diode

Abstract: s8 marking RB751V-40 MARKING CODE S8
Contextual Info: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol

ADS8325IBDGKT

Contextual Info: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •

Contextual Info: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •

416N

Abstract: ADS7816 ADS7822 ADS7826 ADS7827 ADS7829 ADS8320 ADS8325 ADS8325IBDGKT ADS8325IDGKR
Contextual Info: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •

DR-B 2002

Contextual Info: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •

ADS7816

Abstract: ADS7822 ADS7826 ADS7827 ADS7829 ADS8320 ADS8325 ADS8325IBDGKT ADS8325IDGKR
Contextual Info: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •

ADS8365AI

Abstract: ADS8365 ADS8365IPAG ADS8365IPAGR OPA365 TQFP-64 fd 26 B0643
Contextual Info: AD ADS8365 S8 36 5 www.ti.com. SBAS362C – AUGUST 2006 – REVISED MARCH 2008 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling

ADS8365AI

Contextual Info: AD ADS8365 S8 36 5 www.ti.com. SBAS362C – AUGUST 2006 – REVISED MARCH 2008 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling

Contextual Info: AD ADS8365 S8 36 5 www.ti.com. SBAS362C – AUGUST 2006 – REVISED MARCH 2008 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling

Contextual Info: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling

Contextual Info: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling

ADS8317

Abstract: ADS8317IBDGKR ADS8317IBDGKT ADS8317IDGKR ADS8317IDGKT ADS8321 ADS8317IBDRBT
Contextual Info: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling

Contextual Info: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling

BAT42WS

Abstract: BAT43WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol

s7 200

Abstract: BAT42W BAT43W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SCHOTTKY DIODES SOD-123 FEATURES MARKING: BAT42W S7 BAT43W S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42W/BAT43W

s7 200

Abstract: BAT42W BAT42WS BAT43W BAT43WS
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42WS/BAT43WS

Contextual Info: S8 Relay Series Miniature high voltage relay Space saving package Isolation Voltage across contacts 4kV or 5kV dependant on coil voltage Isolation Voltage 7kV contact to coil 2.5A carry current Contact Specification Switch action Material Isolation across contacts

SHIMMER SENSOR

Contextual Info: DATASHEET KEY FEATURES tRiMBLe S8 totaL Station THE POWER TO EXCEL Delivering major workflow innovations for both typical surveying and specialized applications, you now have the power to redefine your performance potential. Video-assisted robotic measurement

Contextual Info: S8-08 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)8.0 @Temp. (øC) (Test Condition)25’

Contextual Info: S8-04FR Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time400n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)8.0

Contextual Info: S8-10FR Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time800n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)8.0

C451C

Abstract: IC OP AMP for Piezoelectric transducers 78-s8 LT1113 LT1113ACN8 LT1113AMJ8 LT1113CN8 LT1113MJ8 hydrophone servo accelerometer
Contextual Info: LT1113 Dual Low Noise, Precision, JFET Input Op Amps U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 100% Tested Low Voltage Noise 6nV/√Hz Max S8 Package Standard Pinout Voltage Gain 1.2 Million Min Offset Voltage 1.5mV Max Offset Voltage Drift

ADS8365

Abstract: ADS8365IPAG ADS8365IPAGR OPA365 TQFP-64 C28xx
Contextual Info: BurrĆBrown Products from Texas Instruments AD S8 ADS8365 365 SBAS362B – AUGUST 2006 – REVISED NOVEMBER 2006 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling SAR ANALOG-TO-DIGITAL CONVERTERS FEATURES • • • • • • DESCRIPTION Six Input Channels