S72 MOSFET Search Results

s72 sot 23

Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Contextual Info: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA

s72 sot 23

Abstract: S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 LT2N7002 Marking Code S72
Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

mosfet s72

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • • 0.103(2.60) • 0.056(1.40) 0.047(1.20) • 0.086(2.20) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.006(0.15)MIN. FEATURES 0.079(2.00) 0.008(0.20) 0.070(1.80)

Marking Code S72

Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

Marking Code S72

Contextual Info: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3

mosfet s72

Abstract: s72 sot 23 N mosfet sot-23 marking ND Marking Code S72 marking code S72 SOT23
Contextual Info: _2N7002 c p : G e n e r a l v S e m ic o n d u c t o r N-Channel Enhancement-Mode MOSFET % Vds 6 0 V RdS ON) 3 .0 Q Id 2 3 0 m A TO-236AB (SOT-23) .122 .110 m. 0.031 (0.8) JL .016 (0.4) H h Top V ie w -[p - 0.035(0.9) 0.079 (2.0) Pin Configuration

Marking Code S72

Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance

2N7002 marking code 72

Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)

S72 FET

Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
Contextual Info: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)

S72 2n7002

Abstract: 2N7002 PANJIT 2N7002 2N7002 MARKING s72 s72 sot 23
Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 3 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

S72 2n7002

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • Specially Designed for Battery Operated Systems, Solid-State Relays 0.103(2.60) • High Density Cell Design For Ultra Low On-Resistance 0.056(1.40)

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays

s72 mosfet

Abstract: 2N7002 MARKING s72
Contextual Info: MCC TM Micro Commercial Components Features
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0 • • • • • Advanced Trench Process Technology

S72 2n7002

Abstract: 2N7002 MARKING transistor marking s72 2N7002 transistor s72 2N7002 MARKING s72 s72 sot 23 s72 mosfet
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

s72 mosfet

Contextual Info: MCC TM Micro Commercial Components Features
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0 • • • • • Advanced Trench Process Technology

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"

S72 2n7002

Abstract: 2N7002 MARKING s72 S72 marking
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1

Contextual Info: 2N7002 60V N-Channel Enhancement Mode MOSFET • RDS ON , VGS@10V,IDS@500mA=5 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • RDS(ON), VGS@4.5V,IDS@75mA=7.5 • Advanced Trench Process Technology 0.056(1.40) • High Density Cell Design For Ultra Low On-Resistance