S632000 Search Results

S634000

Abstract: S63512 S63256
Contextual Info: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8

Contextual Info: GOULD . 2M Bit 262,144 x 8 Static CMOS Mask ROM / • / f l 1 -Semiconductors Preliminary Date Sheet S632000 (256K x 8) May, 1990 Features General Description • Fast Access Time: S632000-15-150 ns S632000-20-200 ns • Fully Static Operation • Low Power Dissipation

S632000

Abstract: cj cl a17
Contextual Info: 2M Bit 262,144 x 8 Static CMOS Mask ROM -> GOULD Preliminary Data Sheet /• iT lI 1 «Semiconductors S632000 (256K x 8) General Description Features The Gould AMI S632000 device is a 2,097,152 bit static m ask program mable C M O S R O M organized as 260,144 words by 8 bits. The device is fully TTL

S63256

Contextual Info: Static CMOS A i w i i s ^ ^ _ Family ol ROMs March 1992 V AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Table 4:. S632000L S631000/001L S63512L S63256L S63128L Process CMOS CMOS CMOS CMOS CMOS Capacity 2 MEG 1 MEG

S6364

Abstract: ROM 23128
Contextual Info: static CMOS &NMOS Familyof ROMs -> GOULD AMI > Sem iconductors Features General Description • 16K, 32K, 64K, 128K, 256K, 512K, 1M, 2M, 4M Selections • Fast Access Time • Mate With State-Of-The-Art 32 Bit Microprocessors • Low Standby Power CMOS • Fully Static Operation

MAS 560 ag

Abstract: S63512 S6364 eprom 2532
Contextual Info: -> GOULD AiMlI Static CMOS & NMOS Family of ROMs Semiconductors December, 1990 Features General Description • 16K, 32K, 64K, 128K, 256K, 512K, 1M, 2M, 4M Selections • Fast Access Time • Mate With State-Of-The-Art 32 Bit Microprocessors • Low Standby Power CMOS