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S5821
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Galaxy Semi-Conductor Holdings
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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Original |
PDF
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92.96KB |
2 |
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S5821
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Hamamatsu
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PHOTODIODE PIN MODULE 960NM 0.6A/W SENSITIVITY 2TO-18 |
Original |
PDF
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140.6KB |
4 |
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S5821
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Hamamatsu Photonics
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Si PIN photodiode |
Original |
PDF
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136.93KB |
4 |
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S5821-01
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Hamamatsu
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PHOTODIODE PIN MODULE 960NM 0.6A/W SENSITIVITY 2TO-18 |
Original |
PDF
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140.6KB |
4 |
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S5821-01
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Hamamatsu Photonics
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Si PIN photodiode |
Original |
PDF
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136.93KB |
4 |
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S5821-02
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Hamamatsu
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PHOTODIODE PIN MODULE 960NM 0.6A/W SENSITIVITY 3TO-18 |
Original |
PDF
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140.6KB |
4 |
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S5821-02
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Hamamatsu Photonics
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Si PIN photodiode |
Original |
PDF
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136.93KB |
4 |
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S5821-03
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Hamamatsu
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PHOTODIODE PIN MODULE 960NM 0.6A/W SENSITIVITY 3TO-18 |
Original |
PDF
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140.6KB |
4 |
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S5821-03
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Hamamatsu Photonics
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Si PIN photodiode |
Original |
PDF
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136.93KB |
4 |
S5821
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode S5820 with 20V to 40V blocking voltage, 3.0A average rectified current, low forward voltage of 0.38V to 0.40V at 1.0A, and non-repetitive peak surge current capability, suitable for low voltage applications. |
Original |
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