S4150 Search Results

S4150 Result Highlights (5)

Part	Manufacturer	Description
THS4150CDGNR	Texas Instruments	150MHz, Fully Differential Input/Output High Slew Rate Amplifier With Shutdown 8-MSOP-PowerPAD 0 to 70
THS4150IDGN	Texas Instruments	150MHz, Fully Differential Input/Output High Slew Rate Amplifier With Shutdown 8-MSOP-PowerPAD -40 to 85
THS4150ID	Texas Instruments	150MHz, Fully Differential Input/Output High Slew Rate Amplifier With Shutdown 8-SOIC -40 to 85
THS4150CD	Texas Instruments	150MHz, Fully Differential Input/Output High Slew Rate Amplifier With Shutdown 8-SOIC 0 to 70
THS4150CDR	Texas Instruments	150MHz, Fully Differential Input/Output High Slew Rate Amplifier With Shutdown 8-SOIC 0 to 70

S4150 Datasheets (6)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
S41500TRM	Sola / Hevi-Duty	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - UPS, On Line1500va120 (5-15P)-120 (8/5-15R), 60Hz, Tower/Rackmount w/Assoc.Mtg.Hardw	Scan	PDF	77.44KB	1
S41500TRM-FR	Sola / Hevi-Duty	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - UPS, 1500VA, 1050W, 120VAC, 50/60Hz	Scan	PDF	77.44KB	1
S4-150RF1	Riedon	Resistors - Chip Resistor - Surface Mount - RES SMD 150 OHM 1% 2W 4525	Original	PDF	411.16KB
S4-150RJ2	Riedon	Resistors - Chip Resistor - Surface Mount - RES SMD 150 OHM 5% 2W 4525	Original	PDF	411.16KB
LS4150	SUNMATE electronic Co., LTD	LS4150 surface mount fast switching diode in LL34 (SOD-80) glass case, featuring ultra-fast switching, high reliability, and high conductance, with cathode band polarity marking and solderable terminals.	Original	PDF
GS41-501M	SUNMATE electronic Co., LTD	Axial leaded glass tube gas discharge tube for instantaneous over-voltage protection, operating temperature -40 C to +85 C, with low capacitance (1 pF max), high insulation resistance (>1000 MΩ), and surge current capacity up to 1000 A (8/20 μs).Axial leaded glass tube gas discharge tube (GDT) for over-voltage protection, operating temperature -40 C to +85 C, with low capacitance (1 pF max), high insulation resistance (>1000 MΩ), and surge current capacity up to 1000 A (8/20 µs).Axial leaded glass tube gas discharge tube with operating temperature -40 C to +85 C, small size, no polarity, low capacitance (1 pF max), high insulation resistance (>1000 MΩ), for instantaneous over-voltage protection in telecom and data line applications.Axial leaded glass tube gas discharge tube with operating temperature -40 C to +85 C, small size, no polarity, low capacitance (1 pF max), high insulation resistance (>1000 MΩ), and surge current capacity up to 1000 A (8/20 us).	Original	PDF

S4150 Price and Stock

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Rochester Electronics LLC


Rochester Electronics LLC THS4150ID IC OPAMP DIFF 1 CIRCUIT 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	THS4150ID	Bulk	18,443		24	1 - 10 - 100 $12.48 1000 $12.48 10000 $12.48	Buy Now
Rochester Electronics LLC THS4150CD IC OPAMP DIFF 1 CIRCUIT 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	THS4150CD	Bulk	14,223		21	1 - 10 - 100 $14.51 1000 $14.51 10000 $14.51	Buy Now
Rochester Electronics LLC THS4150IDGK IC OPAMP DIFF 1 CIRCUIT 8VSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	THS4150IDGK	Tube	13,540		30	1 - 10 - 100 $10.04 1000 $10.04 10000 $10.04	Buy Now
Rochester Electronics LLC THS4150CDGN IC OPAMP DIFF 1 CIRCUIT 8HVSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	THS4150CDGN	Bulk	11,879		20	1 - 10 - 100 $15.26 1000 $15.26 10000 $15.26	Buy Now
Rochester Electronics LLC THS4150IDR IC OPAMP DIFF 1 CIRCUIT 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	THS4150IDR	Bulk	9,387		36	1 - 10 - 100 $8.39 1000 $8.39 10000 $8.39	Buy Now

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S4150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI9434BDY-T1-E3 Abstract: Si9434BDY-T1 Si9434BDY Contextual Info: Si9434BDY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.3 0.055 @ VGS = −2.5 V −5.1 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)	Original	Si9434BDY Si9434BDY--E3 Si9434BDY-T1--E3 08-Apr-05 SI9434BDY-T1-E3 Si9434BDY-T1	PDF
Si4874BDY Abstract: SI4874BDY-E3 Contextual Info: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View	Original	Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 08-Apr-05 SI4874BDY-E3	PDF
SUM110N04-2M3L-E3 Contextual Info: SUM110N04-2m3L New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0023 @ VGS = 10 V 40 0.003 @ VGS = 4.5 V ID (A) 110 a D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Automotive Such As	Original	SUM110N04-2m3L O-263 SUM110N04-2m3L--E3 S-41503--Rev. 09-Aug-04 SUM110N04-2M3L-E3	PDF
S4-144 Abstract: IC cs 4852 T6116 6116LA25 Contextual Info: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or	OCR Scan	6116SA 6116LA IDT79R3000 5/19/20/25/30/35/45ns IDT6116SA 100pW IDT6116LA 160mW S4-152 IDT6116SA/IDT6116LA S4-144 IC cs 4852 T6116 6116LA25	PDF
IC cs 4852 Abstract: s4148 S4-144 Contextual Info: INTEGRATED 14E D D E VI CE • 4 Ô 5 S 7 7 1 0 0 0 3 4 0 0 =i H CMOS STATIC RAM 1 6 K 2K x 8-BIT ID T 6 1 1 6 S A ID T 6 1 1 6 L A 'T - H 6 '2 S - \ Z FEATURES: DESCRIPTION: • Optimized for fast RISC processors Including the IDT79R3000 • High-speed	OCR Scan	5S771 6116SA 6116LA 23-\Z theIDT79R3000 25/30/35/45/55/70/90/120/150ns 15/19/20/25/30/35/45ns IDT6116SA 180mW 100pW IC cs 4852 s4148 S4-144	PDF
s415 Abstract: PDS4150 PDS4150-13 Contextual Info: S4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI 5 Features Mechanical Data • • • • • • • • • • • Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Very Low Leakage Current High Maximum Junction Temperature Capability	Original	PDS4150 AEC-Q101 J-STD-020 DS30473 s415 PDS4150 PDS4150-13	PDF
Contextual Info: S4150 Green 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI Product Summary VR V IF (A) 150 4.0 Features and Benefits VF MAX (V) @ +25°C 0.76 IR MAX (mA) @ +25°C 0.01 Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop •	Original	PDS4150 AEC-Q101 DS30473	PDF
Contextual Info: S4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI 5 Features • • • • • • • • • Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Very Low Leakage Current High Maximum Junction Temperature Capability Highly Stable Oxide Passivated Junction	Original	PDS4150 AEC-Q101 DS30473	PDF
S-41504 Abstract: SUP90N06-05L dt 420 Contextual Info: SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) FEATURES rDS(on) (W) 0.0049 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 90 a 0.0055 @ VGS = 4.5 V APPLICATIONS	Original	SUP90N06-05L O-220AB SUP90N06-05L--E3 08-Apr-05 S-41504 SUP90N06-05L dt 420	PDF
Contextual Info: S4150 Green 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI Features Mechanical Data • • • • • • • • • • • Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Very Low Leakage Current High Maximum Junction Temperature Capability	Original	PDS4150 AEC-Q101 J-STD-020 DS30473	PDF
Si4874BDY Contextual Info: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View	Original	Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 S-41508--Rev. 09-Aug-04	PDF
272c Abstract: SUM110P06-08L-E3 SUM110P06-08L Contextual Info: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance	Original	SUM110P06-08L O-263 SUM110P06-08L--E3 S-41506--Rev. 09-Aug-04 272c SUM110P06-08L-E3 SUM110P06-08L	PDF
Contextual Info: SPICE MODEL: S4150 S4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI ä5 Features • · · · · · · · · Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop A2 b2 High Maximum Junction Temperature Capability L1 PowerDIä5	Original	PDS4150 AEC-Q101 DS30473	PDF
S-41502-Rev Contextual Info: SUM110N06-3m4L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 100% Rg Tested ID (A) APPLICATIONS 110 a 0.0041 @ VGS = 4.5 V D Automotive Such As	Original	SUM110N06-3m4L O-263 SUM110N06-3m4L--E3 08-Apr-05 S-41502-Rev	PDF

73037 S-41504 Abstract: SUP90N06-05L Contextual Info: SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) FEATURES rDS(on) (W) 0.0049 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 90 a 0.0055 @ VGS = 4.5 V APPLICATIONS	Original	SUP90N06-05L O-220AB SUP90N06-05L--E3 18-Jul-08 73037 S-41504 SUP90N06-05L	PDF
SI4812BDY-E3 Abstract: si4812bdy 73038 SI4812BDY-T1-E3 Contextual Info: Si4812BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 9.5 0.021 @ VGS = 4.5 V 7.7 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY	Original	Si4812BDY Si4812BDY--E3 Si4812BDY-T1--E3 S-41509--Rev. 09-Aug-04 SI4812BDY-E3 73038 SI4812BDY-T1-E3	PDF
SUM110P06-08L Contextual Info: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance	Original	SUM110P06-08L O-263 SUM110P06-08L SUM110P06-08L--E3 08-Apr-05	PDF
Contextual Info: Si4812BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 9.5 0.021 @ VGS = 4.5 V 7.7 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY	Original	Si4812BDY Si4812BDY--E3 Si4812BDY-T1--E3 08-Apr-05	PDF
24 volt 220 volt transformer ups Abstract: Current UPS transformer input 220 S41000TRM-FR S518K transformer 3000 kVA NEMA L5-30 1000 va ups S42000TRM 63-13-220-6 sola Contextual Info: Sola/Hevi-Duty Uninterruptible Power Systems Sola 4000 True On-Line Uninterruptible Power Systems UPS Networks and telecommunications systems used for critical applications demand the highest levels of performance and reliability Ñ the true on-line protection	Original	Receptac070-6 556Q5040 L5-30 556Q5050 24 volt 220 volt transformer ups Current UPS transformer input 220 S41000TRM-FR S518K transformer 3000 kVA NEMA L5-30 1000 va ups S42000TRM 63-13-220-6 sola	PDF
IC LOGIC 74150 Abstract: IC 74150 74151A multiplexers TTL 74150 ttl IC 74150 74s151 multiplexers 74 LS 151 54151A Contextual Info: SN 54150, S N 54151A , SN 54LS151, SN 54S151, SN 74150, SN 74151A , S N 7 4 LS 1 51, SN 74S151 DATA SELECTORSIMULTIPLEXERS DECEMBER 1 9 7 2 -R E V IS E D M AR C H 1 9 6 8 • SN 54150 . '1 5 0 Selects One-of-Sixteen Data Sources . J OR W PACKAGE S N 7 4 1 5 0 . . . N PACKAGE	OCR Scan	4151A 54LS151, 54S151, 74S151 IC LOGIC 74150 IC 74150 74151A multiplexers TTL 74150 ttl IC 74150 multiplexers 74 LS 151 54151A	PDF
PDS4150 Contextual Info: SPICE MODEL: S4150 S4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI ä5 NEW PRODUCT Features • · · · · · · · · Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop A2 b2 High Maximum Junction Temperature Capability	Original	PDS4150 AEC-Q101 PDS4150-13 5000/Tape com/datasheets/ap02007 S4150 S4150 DS30473 PDS4150	PDF
SI9434BDY Contextual Info: Si9434BDY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.3 0.055 @ VGS = −2.5 V −5.1 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)	Original	Si9434BDY Si9434BDY--E3 Si9434BDY-T1--E3 18-Jul-08	PDF
Contextual Info: SUM110N04-2m3L New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0023 @ VGS = 10 V 40 0.003 @ VGS = 4.5 V ID (A) 110 a D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Automotive Such As	Original	SUM110N04-2m3L O-263 SUM110N04-2m3L--E3 08-Apr-05	PDF
SUM110N063M4LE3 Abstract: S-41502-Rev Contextual Info: SUM110N06-3m4L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 100% Rg Tested ID (A) APPLICATIONS 110 a 0.0041 @ VGS = 4.5 V D Automotive Such As	Original	SUM110N06-3m4L O-263 SUM110N06-3m4L--E3 S-41502--Rev. 09-Aug-04 SUM110N063M4LE3 S-41502-Rev	PDF

S4150 Search Results

S4150 Result Highlights (5)

S4150 Datasheets (6)

S4150 Price and Stock

Rochester Electronics LLC THS4150ID

Rochester Electronics LLC THS4150CD

Rochester Electronics LLC THS4150IDGK

Rochester Electronics LLC THS4150CDGN

Rochester Electronics LLC THS4150IDR

S4150 Datasheets Context Search

SI9434BDY-T1-E3

Si4874BDY

SUM110N04-2M3L-E3

S4-144

IC cs 4852

s415

S-41504

Si4874BDY

272c

S-41502-Rev

73037 S-41504

SI4812BDY-E3

SUM110P06-08L

24 volt 220 volt transformer ups

IC LOGIC 74150

PDS4150

SI9434BDY

SUM110N063M4LE3