S4 07 Search Results

S250

Contextual Info: PAN-TERM Ring Terminals TUBULAR RING TERMINALS NEW! Part Number S8-10R-Q S8-14R-Q S8-56R-Q S8-38R-Q S6-10R-E S6-14R-E S6-56R-E S6-38R-E S4-10R-E S4-14R-E S4-56R-E S4-38R-E S2-10R-X S2-14R-X S2-56R-X S2-38R-X S2-12R-X S1/0-14R-X S1/0-56R-X S1/0-38R-X S1/0-12R-X

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4-K/H/L

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4-K/H/L

60 nf 06

Abstract: CPM-13 CPM13 1299
Contextual Info: Metallized Polyester S4-Film Dielectric Capacitors S4 07/10/15/27 CPM-13 — 7.62/10.16/15.24/27.94 Radial Leads 63/160/250/400 V- STANDARDIZATION Schoop Generic specifications: CEI 384-1/CECC 30000/UTE 83100 Sectional specifications: CEI 384-2/CECC 30400/UTE 83151

Contextual Info: Terminals PANDUIT Part Number S8-10R-Q S8-14R-Q S8-56R-Q S8-38R-Q S6-10R-E S6-14R-E S6-56R-E S6-38R-E S4-10R-E S4-14R-E S4-56R-E S4-38R-E S2-10R-X S2-14R-X S2-56R-X S2-38R-X S2-12R-X S1/0-14R-X S1/0-56R-X S1/0-38R-X S1/0-12R-X S2/0-14R-X S2/0-56R-X S2/0-38R-X

DMS501

Abstract: HX8218C01 YOKOGAWA-3298 HX8218 960x240 water level control block diagram picture BT601 BT656 HX8615A MB-TFT-35-S4-S
Contextual Info: WINCOM TECH Co., Ltd. Product Specification MB-TFT-35-S4-S CUSTOMER CUSTOMER PART NO. APPROVED BY DATE ¨ Approved For Specifications n Approved For Specifications & Sample APPROVED BY CHECKED BY ORGANIZED BY MB-TFT-35-S4-S RECORD OF REVISION Version Contents

5214R

Contextual Info: THIS COPY IS PROVIDED ON A RESTRI CT ED BASIS AND IS NOT TO BE USED IN ANY WAY DE TR IM EN TA L TO THE INTERESTS OF PA NDUIT CORP. P A RT # WIRE 5 8 - 10R 5 8 - 14R S8 - 5 6 R S8 - 3 8 R S 6 - 1OR 5 6 - 14R 56 -5 6R S6 -3 8R 5 4 - 10R S4 -1 4R S4 -5 6R S4 -3 8R

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

MT42L16M32

Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

MT42L16M32D1

Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Contextual Info: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package

Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD525G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix YMD525G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glassepoxy substrate. Hynix HYMD525G726A(L)S4-M/K/H/L series provide a high performance 8-byte interface in 5.25"

24c02 wp

Abstract: 24C02WP ST 1803 DHI ST 24C02wp CN17-3 L5920 24C02W quanta via6307 10K0402
Contextual Info: 1 2 3 4 5 6 7 8 Voltage Rails PWR_SRC A Primary DC system power supply 3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail 3V_S5 3.3V switched power rail ( off in S5-S5 ) 5VSUS 5V switched power rail ( off in S4-S5 )

T-78

Abstract: quanta PC97551 PHKD13N03LT C305 RN138 usb QUANTA GFX AR208 C5343 lm3931
Contextual Info: 1 2 3 4 5 6 7 8 Voltage Rails PWR_SRC Primary DC system power supply 3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail 5VSUS 5V switched power rail ( off in S4-S5 ) +5V 5V switched power rail ( off in S3-S5 )

alviso-GM

Abstract: TPA056 c420d quanta PC97551 AO3408 915GM pc1037 MAX1907 Socket AM2
Contextual Info: 1 2 3 4 5 6 7 8 Voltage Rails A PWR_SRC Primary DC system power supply +3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail +3V_S5 3.3V switched power rail ( off in S5-S5 ) +1.8VSUS +1.8V switched power rail ( off in S4-S5 )

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

power transistor 1802

Abstract: transistor 010C ARF1510
Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

ARF1511

Abstract: 225MH
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

rcas 4250

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726C L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726C(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726C(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

AMPLIFIER 1500w

Abstract: ARF1510 15VCrss
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

RT 5510

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

AMPLIFIER 1500w

Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

DDR200

Abstract: DDR266A DDR266B du 7670
Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy