S3H 02 Search Results

56-PIN

Abstract: LH28F320S3H-L LH28F320S3-L S3HL
Contextual Info: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14

56-PIN

Abstract: LH28F320S3H-L LH28F320S3-L
Contextual Info: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14

gsm internet modem circuit

Abstract: S3H-L TSOP056-P-1420
Contextual Info: LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

S3H-02

Abstract: S19C s3vc0 S2LA20 s3h 02 S1K20H S1K40 S6K20 S2K20H S2K40
Contextual Info: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S19J S19L S20C S20D S20E S20G S20J S20L S20L60 S30L40 S3QL60 S51A

Contextual Info: 2 . Sch em atic: Max 1. M echanical D im ensions: < o m o t / <F 015 6 O —S3H V X YYWW o 1 00 m CO •sl- J Ò X o TRANSFORMER O in fa . CM o 3. E lectrical S p ecification s: 25°C PARALLEL SERIES OCL NO DC : 14.70uH±20% 58.81 uH±20% Isat: 3.46Adc

s3h 02

Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Contextual Info: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^

Contextual Info: T O SH IB A TLP561G TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP561G TRIAC DRIVER Unit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E The TOSHIBA TLP561G consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting

8010J

Abstract: 8010P
Contextual Info: holt; HI-8010 Series INTEGRATED CIRCUITS CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION The HI-8010 high voltage display driver is con­ structed of MOS P Channel and N Channel enhancement mode devices in a single monolithic structure. It is designed to drive high voltage liquid

Contextual Info: 3ü GEC P L E S S E Y j a n u a r y i 996 SEM ICO ND UCTO RS DS4278-2.1 TF913.C FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 2000V 1300A ^T RMS 17000A ^TSM 300V/|_ls dV/dt 500A/(is dl/dt 50jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS.

Contextual Info: HYUNDAI H Y 534256A SEMICONDUCTOR S e rie s 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynam ic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide w ide operating

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M32BJ-6,-7/ MH4M32 NBJ-6, -7/ MH4M32SBJ-6,-7 FAST PAGE MODE 134217728-BIT (41943Û4-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32BJ/NBJ/SBJ is 4194304-word by 32-bit PIN CONFIGURATION (TOP VIEW) [Both side] dynamic RAM module. That module consists of thirty-two

A13L

Abstract: A15C CY7C1021V CY7C1021V33L-1OVC CY7C1021V33-10ZC C07S
Contextual Info: CY7C1021V CYPRESS_ 64K x 16 Static RAM Features W riting to the device is a c c o m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/0-| throu gh l/O g ), is w ritten into the location spe cifie d on th e address pins (A0

IPFR-BB-0-190

Abstract: UPFR-BS-240-33
Contextual Info: Catalogue 2012-2013 www.wemausa.com www.wemausa.com Features: ● IP67 protection rating for the whole gauge; can work up to 1m underwater; ● Excellent anti-fogging performance; ● 316 Stainless steel bezel with curved glass; ● Easy installation with multi-plug socket connection design;

A115A

Abstract: BYT41D T6818 T6818-TBQ T6818-TBS T6828 T6828-TBQ T6828-TBS U5021M diode S3L 49
Contextual Info: Features • • • • • • • • • • • • • Supply voltage up to 40 V RDSon typ. 0.5 Ω @ 25°C, max. 1 Ω @ 150°C Up to 1.5 A output current Three half-bridge outputs formed by three high-side and three low-side drivers Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors

DIODE s3l

Abstract: s3l 02 diode DIODE s2l ATA6827 BYT41D U5021M 4912E-auto-02 S3H 02 diode
Contextual Info: Features • • • • • • • • • • • • Supply Voltage up to 40V RDSon Typically 0.8Ω at 25°C, Maximum 1.8Ω at 200°C Up to 1.0A Output Current Three Half-bridge Outputs Formed by Three High-side and Three Low-side Drivers Capable to Switch all Kinds of Loads Such as DC Motors, Bulbs, Resistors, Capacitors

ATA6827

Abstract: BYT41D U5021M DIODE s3l 4912E-auto-02
Contextual Info: Features • • • • • • • • • • • • Supply Voltage up to 40V RDSon Typically 0.8Ω at 25°C, Maximum 1.8Ω at 200°C Up to 1.0A Output Current Three Half-bridge Outputs Formed by Three High-side and Three Low-side Drivers Capable to Switch all Kinds of Loads Such as DC Motors, Bulbs, Resistors, Capacitors

7C408A

Contextual Info: CY7C408A CY7C409A m w C Y PR ESS Features • 64 x 8 and 64 x 9 first-in first-out FIFO buffer memory • 35-MHz shift in and shift out rates • Almost Full/Almost Empty and Half Full flags • Dual-port RAM architecture • Fast (50-ns) bubble-through

ATA6831

Abstract: DIODE s3l BYV28 U5021M
Contextual Info: Features • • • • • • • • • • • • • • Supply Voltage up to 40V RDSon Typically 0.8Ω at 25°C, Maximum 1.5Ω at 150°C Up to 1.0A Output Current Three Half-bridge Outputs Formed by Three High-side and Three Low-side Drivers Capable of Switching Loads such as DC Motors, Bulbs, Resistors, Capacitors, and

4531A

Abstract: DIODE s2l A115A T6819 T6819-TBQ T6819-TBS T6829 T6829-TBQ T6829-TBS U5021M
Contextual Info: Features • • • • • • • • • • • • • • Supply Voltage up to 40 V RDSon Typically 0.5 Ω at 25°C, Maximum 1 Ω at 150°C Up to 1.5 A Output Current Three High-side and Three Low-side Drivers Usable as Single Outputs or Half Bridges

2sK2750 equivalent

Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
Contextual Info: SELECTION GUIDE Power MOSFET www.toshiba-components.com X3 POWERMOSFET07 PowerMosfet-Brosch.indd 1 03.05.2007 13:53:26 Uhr 2 V S-6 Part Number (TSOP6) Maximum Ratings Circuit VDSS(V) ID(A) Configuration 10V RDS (ON) max (m ⍀) 4.5V 2.5V 2.0V 1.8V Qg typ. Ciss typ.

as15f

Abstract: L-12-OV-5 LAS1605 pac010 AS-15f LAS14AU F25KS 2PFT05 E82A LAS6321P
Contextual Info: TEL: 805-498-2111 FAX : 805-498-3804 Part Num ber V rw m I f a v » Trr Q u a lifie d To EZ1082 . EZ1083 . P age . 4 . . P a rt Num ber V rw m L A S -1505 . I f (a v Trr Q u a lifie d To P age P art N u m be r U S -6 3 2 0 P VflW M