S3C MARKING Search Results

M 1061

Abstract: D027A PFC17 PFC171 IR diodes 0B
Contextual Info: S^C G S-THOMSON S3C O THOMSON-CSF D | 7 ^ 2 3 ? 02705 - 0005705 D7 PFC6V4—PFC171 DIVISION SEMICONDUCTEURS - - LOW CAPACITANCE UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES D E PROTECTION UNIDIRECTIONNELLES FAIBLE CAPA CITÉ TRANSIL Pp ¿1,5 kW/1 ms expo.

DIODE S3c

Abstract: S3C marking IRF6892S S3C diode
Contextual Info: PD - 97770 IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l DirectFET plus MOSFET with Schottky Diode ‚ RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching 

Contextual Info: PD - 97770 IRF6892STRPbF IRF6892STR1PbF DirectFET plus MOSFET with Schottky Diode ‚ l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching 

TRANSISTOR S3C

Abstract: DIODE S3c S3C marking
Contextual Info: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U—MOSIII NOTE BOOK PC APPLICATIONS PORTABLE EQUIPMENTS APPLICATIONS TPC6103 UNIT:mm •Low Drain - Source ON Resistance : R DS(oN)= 29mQ(Typ.) • High Forward Transfer Admittance : | Y f s | = 13 S (Typ.)

TPC6103

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) · High forward transfer admittance: |Yfs| = 13 S (typ.)

12V DC to 19V dC converter schematic diagram

Abstract: cd4007 application schematic diagram converter input 12v to 19v LTspice schematic diagram inverter 12v to 5v LTC1263 schematic diagram converter input 12v to 19v for LTC1263CS8 CD4007 S3C marking
Contextual Info: LTC1263 12V, 60mA Flash Memory Programming Supply U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 1263 is a regulated 12V, 60mA output DC/DC converter. It provides the 12V ±5% output necessary to program double byte-wide flash memories. The output

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

SS53C

Abstract: SS54C SS55C SS52C Schottky Rectifiers S3C marking
Contextual Info: BL GALAXY ELECTRICAL SS52C-SS56C REVERSE VOLTAGE: 20 - 60 V CURRENT: 5.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AB SMC ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications

1262 12v

Abstract: 12v dc to 12v ct LTC1262CN8 LTC1262 LTC1262CS8 Si9410 TA03 TP0610 VN7002 LT1315
Contextual Info: LTC1262 12V, 30mA Flash Memory Programming Supply U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ Regulated 12V ±5% Output Voltage No Inductors Supply Voltage Range: 4.75V to 5.5V Guaranteed 30mA Output Low Power: ICC = 500µA ICC in Shutdown: 0.5µA 8-Pin PDIP or SO-8 Package

LTC1262CN8

Contextual Info: LTC1262 12V, 30mA Flash Memory Programming Supply DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ Regulated 12V ±5% Output Voltage No Inductors Supply Voltage Range: 4.75V to 5.5V Guaranteed 30mA Output Low Power: ICC = 500µA ICC in Shutdown: 0.5µA 8-Pin PDIP or SO-8 Package

Tantalum N8

Abstract: LTC1262 LTC1262C LTC1262CN8 LTC1262CS8 LTC1262I LTC1262IS8 TP0610 lt1315
Contextual Info: LTC1262 12V, 30mA Flash Memory Programming Supply U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ Regulated 12V ±5% Output Voltage No Inductors Supply Voltage Range: 4.75V to 5.5V Guaranteed 30mA Output Low Power: ICC = 500µA ICC in Shutdown: 0.5µA 8-Pin PDIP or SO-8 Package

SS56C

Abstract: SS53C SS52C SS54C SS55C
Contextual Info: BL GALAXY ELECTRICAL SS52C- - -SS56C REVERSE VOLTAGE: 20 - 60 V CURRENT: 5.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AB SMC ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications

Marking s8c

Abstract: s8c marking SK56C SK52C-S510C SK52C SK53C SK54C SK55C
Contextual Info: BL GALAXY ELECTRICAL SK52C-S510C REVERSE VOLTAGE: 20 - 60 V CURRENT: 5.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMC ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications ◇ Low profile package

TVS RS422

Abstract: TVS diode line voltage Application Note EIA-RS422 S12C SMS03C SMS05C SMS12C SMS15C SMS24C EIA-RS-423
Contextual Info: SMS03C thru SMS24C 4 LINE BIDIRECTIONAL TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW W W W . Microsemi . COM T V S array™ S E R I E S DESCRIPTION This 6 pin 4 line bi-directional array is designed for use in applications where protection is required at the board level from voltage transients caused by

marking s4b

Contextual Info: um LTC1262 TECHNOLOGY 12V, 30m A Flash M e m o ry P ro gram m ing Supply April 1994 A’u ’i. K flT U IK S D C S C M P T IO D • ■ ■ ■ ■ ■ ■ ■ The LTC1262 is a regulated 12V, 30mA output DC/DC converter. It is designed to provide the 12V ±5% output

TPC6103

Abstract: 2A103
Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

TPC6103

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

TPC6103

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

Contextual Info: r r w m LTC1262 i TECHNOLOGY 12V, 30m A Flash M em ory Program m ing Supply F€flTU R€ S D € S C R IP T IO fl • ■ ■ ■ ■ ■ ■ The LTC 1262 is a regulated 12V, 30mA output DC/DC converter. It is designed to provide the 12V ±5% output necessary to program byte-wide flash memories. The

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

Contextual Info: ADVANCE INFORMATION Am29240 , Am29245™, and Am29243 Advanced Micro Devices High-Performance RISC Microcontrollers Am29240 MICROCONTROLLER BLOCK DIAGRAM ✓ Clock/ Control Lines' fS Control/Status MEMCLK Serial Data Printer/Scanner Video ROM Chip Selects

Contextual Info: £ / T linTECHNOLOGY flA R _ am ] 2V, 30mA Flash M emory Programming Supply KOTUIKS DescRiPTion • Regulated 12V ±5% Output Voltage The LTC 1262 is a regulated 12V, 30mA output DC/DC converter. It is designed to provide the 12V ±5% output necessary to program byte-wide flash memories. The

toshiba smd marking

Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Contextual Info: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency