|
S3620
|
|
ABB Group
|
Power Semiconductor Data Book 1976 |
Scan |
PDF
|
88.12KB |
2 |
|
S3620
|
|
Coors Components
|
Silicon Power Rectifiers 70 Amp |
Scan |
PDF
|
25.96KB |
1 |
|
S3620
|
|
Microsemi
|
Silicon Power Rectifier |
Scan |
PDF
|
111.18KB |
3 |
|
S3620
|
|
Microsemi
|
Silicon Power Rectifier |
Scan |
PDF
|
125.25KB |
2 |
|
S3620
|
|
Unknown
|
Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
|
139.44KB |
1 |
|
S3620
|
|
Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
|
146.37KB |
2 |
|
S362-003
|
|
Tripp Lite
|
D-Sub Cables, Cable Assemblies, CABLE SCSI II HD50M/DB25M 3' |
Original |
PDF
|
|
1 |
|
S362-006
|
|
Tripp Lite
|
D-Sub Cables, Cable Assemblies, CABLE SCSI II HD50M/DB25M 6' |
Original |
PDF
|
|
2 |
|
S36-2.23-30-02
|
|
Power-One
|
Nominal voltage: 36V, temperature sensor |
Original |
PDF
|
86.19KB |
4 |
|
S36-2.23-35-02
|
|
Power-One
|
Nominal voltage: 36V, temperature sensor |
Original |
PDF
|
86.19KB |
4 |
|
S36-2.27-35-02
|
|
Power-One
|
Nominal voltage: 36V, temperature sensor |
Original |
PDF
|
86.19KB |
4 |
|
S3625
|
|
Unknown
|
Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
|
139.44KB |
1 |
|
S3625
|
|
Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
|
146.37KB |
2 |
CA-IS3621LVW
|
|
ChipAnalog
|
CA‐IS36xx高性能,5kVRMS隔离耐压,集成高效率、低辐射DC‐DC转换器 的数字隔离器 |
Original |
PDF
|
|
|
|
|
VS3620DP2-G
|
|
VANGUARD
|
30V Dual Asymmetric N-Channel MOSFET with 4.6 mΩ typical RDS(on) at 10V VGS, PDFN5x6 package, optimized for low switching losses and high efficiency power applications. |
Original |
PDF
|
|
|
VS3622AS
|
|
VANGUARD
|
30V/15A N-Channel Advanced Power MOSFET with low on-resistance of 8.4 mΩ at VGS=10V and 12 mΩ at VGS=4.5V, available in SOP8 package, suitable for 5V logic level control applications. |
Original |
PDF
|
|
|
VS3625DB
|
|
VANGUARD
|
30V Dual Asymmetric N-Channel Advanced Power MOSFET in DFN3x3 package with RDS(on) of 6.6 mΩ (Q1) and 4.5 mΩ (Q2) at VGS=10V, featuring high avalanche energy rating and low gate charge for power conversion applications. |
Original |
PDF
|
|
|
VS3622AA2
|
|
VANGUARD
|
30V/13A N-Channel Advanced Power MOSFET with low on-resistance of 8.8 mOhm at VGS=10V, 13 mOhm at VGS=4.5V, suitable for 5V logic level control and fast switching applications in a DFN2x2x0.45-6L package. |
Original |
PDF
|
|
|
VS3628DB
|
|
VANGUARD
|
30V dual asymmetric N-channel MOSFET in DFN3x3 package with low on-resistance of 23 mΩ and 9 mΩ at VGS=4.5V, high current capability, and RoHS-compliant lead plating. |
Original |
PDF
|
|
|
VS3620GEMC
|
|
VANGUARD
|
30V/40A N-Channel Advanced Power MOSFET with 4.9 mΩ typical RDS(on) at VGS=10V, available in PDFN3333 package, designed for high efficiency and fast switching applications. |
Original |
PDF
|
|
|