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S3620
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ABB Group
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Power Semiconductor Data Book 1976 |
Scan |
PDF
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88.12KB |
2 |
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S3620
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Coors Components
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Silicon Power Rectifiers 70 Amp |
Scan |
PDF
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25.96KB |
1 |
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S3620
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Microsemi
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Silicon Power Rectifier |
Scan |
PDF
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111.18KB |
3 |
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S3620
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Microsemi
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Silicon Power Rectifier |
Scan |
PDF
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125.25KB |
2 |
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S3620
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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139.44KB |
1 |
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S3620
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Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
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146.37KB |
2 |
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S362-003
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Tripp Lite
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D-Sub Cables, Cable Assemblies, CABLE SCSI II HD50M/DB25M 3' |
Original |
PDF
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1 |
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S362-006
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Tripp Lite
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D-Sub Cables, Cable Assemblies, CABLE SCSI II HD50M/DB25M 6' |
Original |
PDF
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2 |
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S36-2.23-30-02
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Power-One
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Nominal voltage: 36V, temperature sensor |
Original |
PDF
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86.19KB |
4 |
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S36-2.23-35-02
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Power-One
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Nominal voltage: 36V, temperature sensor |
Original |
PDF
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86.19KB |
4 |
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S36-2.27-35-02
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Power-One
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Nominal voltage: 36V, temperature sensor |
Original |
PDF
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86.19KB |
4 |
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S3625
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
|
139.44KB |
1 |
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S3625
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Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
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146.37KB |
2 |
VS3622AA2
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VANGUARD
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30V/13A N-Channel Advanced Power MOSFET with low on-resistance of 8.8 mOhm at VGS=10V, 13 mOhm at VGS=4.5V, suitable for 5V logic level control and fast switching applications in a DFN2x2x0.45-6L package. |
Original |
PDF
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VS3622AS
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VANGUARD
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30V/15A N-Channel Advanced Power MOSFET with low on-resistance of 8.4 mΩ at VGS=10V and 12 mΩ at VGS=4.5V, available in SOP8 package, suitable for 5V logic level control applications. |
Original |
PDF
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CA-IS3621LVW
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ChipAnalog
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CA‐IS36xx高性能，5kVRMS隔离耐压，集成高效率、低辐射DC‐DC转换器 的数字隔离器 |
Original |
PDF
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VS3620DP2-G
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VANGUARD
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30V Dual Asymmetric N-Channel MOSFET with 4.6 mΩ typical RDS(on) at 10V VGS, PDFN5x6 package, optimized for low switching losses and high efficiency power applications. |
Original |
PDF
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VS3628DB
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VANGUARD
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30V dual asymmetric N-channel MOSFET in DFN3x3 package with low on-resistance of 23 mΩ and 9 mΩ at VGS=4.5V, high current capability, and RoHS-compliant lead plating. |
Original |
PDF
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VS3625DB
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VANGUARD
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30V Dual Asymmetric N-Channel Advanced Power MOSFET in DFN3x3 package with RDS(on) of 6.6 mΩ (Q1) and 4.5 mΩ (Q2) at VGS=10V, featuring high avalanche energy rating and low gate charge for power conversion applications. |
Original |
PDF
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VS3620GEMC
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VANGUARD
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30V/40A N-Channel Advanced Power MOSFET with 4.9 mΩ typical RDS(on) at VGS=10V, available in PDFN3333 package, designed for high efficiency and fast switching applications. |
Original |
PDF
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VS3622AA2
