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    S2E DIODE Search Results

    S2E DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    S2E DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 7 D 75 N D75NR EUPEC S2E » • 3M03ET7 OnOOfllE flbl ■ UPEC Typen reihe/Type range_ D 7 5 N / D 7 5 NR_ 400_ 800_ 1200_ 1400_ 1600 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte


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    d75nr3m03et7t-91-20d1509n PDF

    LM12K

    Abstract: BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation
    Contextual Info: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic


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    t-79z3tuh/8704-29lm12kbridge-rectifier 5v 1a+8bridge-rectifier 15vlm12cklm12clkbridge-rectifier 100v 1aop amp 40v 100wlm12clm12bridge-rectifier operation PDF

    Contextual Info: S2E EUPEC D 3 4 0 3 5 1 ? Gcmaa?1! 3 5 a • upec 'T-O h r 7 Tvoenreihe/Tvoe range D 10 N 400 Elektrische Eigenschaften Electrical properties Höchstzulässlae Werte Periodische Vrrm Spitzensperrspannung Effektiver I frmsm Durchlaßstrom Dauergrenzstrom I favm


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    d448nd1509n PDF

    TRANSISTOR FF75

    Abstract: 1BW TRANSISTOR
    Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module


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    34d32ci7transistor ff751bw transistor PDF

    Contextual Info: 7 -3 7 - 3 / FF 150 R 06 KL EUPEC S2E Transistor T> 34D32T7 Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften 0GG0224 Bectrical properties RthCK Ö2S « U P E C Thermal properties 0,09 0,18 0,03 0,06 DC, pro Baustein / per module DC, pro Zweig / per arm


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    34d32t70gg022434d32ci7 PDF

    LM12

    Abstract: lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K
    Contextual Info: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic


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    t-79-23lm12lm12 op ampilm12+4lm12 op amp iclm12ckof ic 723 linear regulatorlm12k PDF

    J975

    Abstract: 1BW TRANSISTOR 733transistor
    Contextual Info: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


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    000020bsat00j9751bw transistor+1733transistor PDF

    transistor 1BW 57

    Abstract: IGBT EUPEC
    Contextual Info: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften


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    ggg0232transistor 1bw 57igbt eupec PDF

    Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module


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    PDF

    LM3S6432

    Abstract: HDR 2x5 TH connector
    Contextual Info: Stellaris Serial-to-Ethernet Reference Design Kit User ’s Manual RDK-S2E-04 Co pyrigh t 2 008– 200 9 Te xas In strumen ts Copyright Copyright © 2008–2009 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.


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    rdk-s2e-04lm3s6432hdr 2x5 th connector PDF

    TRANSISTOR KT 838

    Abstract: FF200 UTG 16 diode sg 5 ts
    Contextual Info: FF 200 R 06 KF EUPEC S2E ]> Rthjc Elektrische Eigenschaften Electrical properties V ces Maximum rated values 600 V 200 A RthCK lc G G 00232 Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 *1 7 T T l •UPEC Thermal properties 0,08 0,16 0,03 0,06 DC, pro Baustein / per module


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    ggg023234d32ci7transistor kt 838ff200+2utg 16diode sg 5 ts PDF

    WR24D15/1000u

    Abstract: WR48D12/1250U computer products wr24D12
    Contextual Info: COMPUTER PRDTS/ POWER S2E D H 5313103 OODObBT 2fl7 BCPR WR-U SERIES Single and Dual Output 30 W att DC/DC Converters • • • • • • 30 W atts 2:1 Input Range Efficiency to 86% Isolated Outputs 2 Year W arranty For new designs, please see the NFC Series


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    00d0b3c48vdcwr24d15/1000uwr48d12/1250u+1computer products wr24d12 PDF

    LN800

    Abstract: C2E1 F400 diode f400
    Contextual Info: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties


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    d0dd25fl34d32ci7ln800c2e1+2f400diode f400 PDF

    T930S

    Abstract: A358S A438S T128F T318F T698F EUPEC tt 104 EUPEC tt 25 N 12 ST178 T510S
    Contextual Info: S2E J> EUPEC aHGBET? 0G0057Q 45Ô M U P E C A 1250 S ^ 2 * 5 '2 - 1 600 lÿpenreihe/Type range Elektrische Eigenschaften Höchstzulässige Werte 1000 1100 1200 1300* —0* Electrical properties Vrrm tp= 1 «S 'rfTj ’ "/j Itavm tc = 85°C tc = 70°C


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    a1250t-91-20t930sa358s+8a438st128ft318ft698feupec tt 104eupec tt 25 n 12st178t510s PDF

    Contextual Info: S2E » EUPEC A 438 S 3403217 0000554 EPS « U P E C • 'P Z S -l'N Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1300 15 V 50 V V drm V rrm V rr m C


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    PDF

    Contextual Info: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS


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    PDF

    DIODE S2E

    Abstract: 810P A618 s2e diode
    Contextual Info: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 - j l o 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm


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    diode s2e810pa618s2e diode PDF

    SMTRAM3-7-5ET

    Abstract: HDR 2X6 shrd HDR 2x6 SMT_RA_M3 DIODE S2E s2e transistor ARM Cortex M4 s2e diode db9f female DB9M
    Contextual Info: Stellaris Serial-to-Ethernet Reference Design Kit U S E R ’S M A N U A L RDK-S2E-01 Co pyrigh t 200 8 Lumin ary Micro, In c. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,


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    rdk-s2e-0132-bit16-bitsmtram3-7-5et+9hdr 2x6 shrdhdr 2x6smt_ra_m3diode s2es2e transistorarm cortex m4s2e diodedb9f femaledb9m PDF

    Contextual Info: E UP EC S2E J> 34032^7 0G0GS7G *450 * U P E C A 1250 S lÿpenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1300 V 15 V 50 V qrm V rrm V r r m C tp = 1 «S


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    PDF

    Differential Pressure Transducer BHL

    Abstract: 1-8256
    Contextual Info: CALEX MA N UF AC T UR I NG CO S2E lflllSSD D DD01G33 07^ B K EX Model 165 Bridgesensor 510 687-4411 (800) 542-3355 FAX: (510) 687-3333 FEATURES • No other Function Modules Needed. Just Add Power. • Under or Over Voltage Alarm Function Built-in. • Power Almost any Transducer with 4 to 10 Volt


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    dd01g33mk165differential pressure transducer bhl1-8256 PDF

    1000 watt power supply scheme

    Abstract: 1000 watt step down converter scheme 48T5.15K 24T5.12K 12T5.12K Calex
    Contextual Info: CALEX M A N U F A C T U R I N G CO S2E D 1 Ö 1 1 2 S G DDOliafl at? * C E X • NEW* 55 Watt Triple Output DC/DC Converters _3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FEATURES FAX: (415)932-6017 J • PCB Mounting With Optional Heat Sink Or Chassis


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    112sg1000 watt power supply scheme1000 watt step down converter scheme48t5.15k+324t5.12k12t5.12kcalex PDF

    DIODE S2E

    Contextual Info: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery


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    t-39-01110mp100pat0220+2ot-23diode s2e PDF

    metal rectifier diode

    Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
    Contextual Info: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)


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    b4312sel110mp100pat0220+9metal rectifier diodediode s2ed026super matched paird04112 pulse diode rectifierd07 15 diodediode d07 104fast recovery diode 1a PDF

    Contextual Info: 7 D 121 NR EUPEC S5E » • Tvoenreihe/TvDe range D 121 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische V rrm Spitzensperrspannung Effektiver I frm sm Durchlaßstrom Dauergrenzstrom I fa v m Maximum Dermissible values


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    34q3atd448nt-91-20d1509n PDF