S29NSXXXN Search Results

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

Contextual Info: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics „ Single 1.8V read, program and erase (1.70V to 1.95V)

transistor c124 esn

Abstract: transistor SA235 S71NS064NA0
Contextual Info: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM

S29GLXXXP

Abstract: S70GL02GS S29GLxxxS
Contextual Info: Reset Voltage and Timing Requirements for MirrorBit Flash Application Note Synopsis MirrorBit NOR flash has several unique reset control signal timing requirements. Timing requirements vary by MirrorBit process and family 110 nm, 90 nm, 65 nm, GLxxxN, WSxxxP, etc… . System designers must

bjw marking code

Abstract: S29NS128N S29NS256N S29NS-N VDC048 VDE044 spansion am29f part marking
Contextual Info: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)

S29NS128N

Abstract: S29NS256N S29NS-N VDC048 VDE044 bjw marking code
Contextual Info: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)

Contextual Info: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and pSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) pSRAM

bjw marking code

Contextual Info: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Data Sheet Distinctive Characteristics „ „ — —