S2083 APPLICATION Search Results

C2083

Abstract: S2083 s2083 application
Contextual Info: C2083 Application Note is replaced by S2083 Application Note

s2083

Abstract: qfn 32 5x5 STENCIL rf 4 mm PQFN s2083 application PQFN jedec package MO-220 32 5x5 qfn 3X3 land pattern PDFN STQFN-14 MO-220
Contextual Info: Application Note S2083 Surface Mount Instructions for QFN / DFN Packages Rev. V9 Introduction Via Design The layout of the surface mount board plays a critical role in product design and must be done properly to achieve the intended performance of an integrated circuit. An accurate PCB pad and solder

s2083

Abstract: s2083 application jedec package MO-220 68 PQFN IPC-SM-782 M570 MO-220 S2082
Contextual Info: Surface Mount Instructions for PQFN Packages S2083 V5 Introduction The layout of the surface mount board plays a critical role in product design and must be done properly to achieve the intended performance of an integrated circuit. An accurate PCB pad and solder stencil

s2083

Abstract: PQFN IPC-SM-782 MO-220
Contextual Info: Surface Mount Instructions for PQFN Packages S2083 V6 Introduction The layout of the surface mount board plays a critical role in product design and must be done properly to achieve the intended performance of an integrated circuit. An accurate PCB pad and solder stencil

S2080

Contextual Info: Application Note S2080 Moisture Effects on the Soldering of Plastic Encapsulated Devices Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering

S2083

Abstract: JESD22-A113 J-STD-033 S2080
Contextual Info: Application Note S2080 Moisture Effects on the Soldering of Plastic Encapsulated Devices Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering

Contextual Info: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V2 VG2a VD1a VD2a VD2a 18 17 16 1 15 GND GND 2 14 GND RFIN 3 13 RFOUT GND 4 12 GND GND 5 11 GND This power amplifier is ideally suited for Point-toPoint Radios and C-band radar applications. 6 7 8 9 10 VD2b

Contextual Info: MAAM-011112 Buffer Amplifier 20 – 37 GHz Rev. V1 Features Ordering Information1 Package MAAM-011112-TR0500 500 piece reel MAAM-011112-000000 Bulk Packaging MAAM-011112-000SMB Sample Board 1. Reference Application Note M513 for reel size information. Vd4

MASW-000825-12770T

Abstract: S2083 PIN14
Contextual Info: MASW-000825-12770T HMICTM PIN Diode SP2T 20 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • • • • • • • • • • Rev. V3 Functional Diagram TOP VIEW Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: Tx = 0.24 dB Avg @ 2025 MHz, 35mA

Moisture Sensitivity Level Rating

Abstract: JESD22-A113 moisture sensitive handling and packaging moisture sensitivity s2083 JEDEC J-STD-033 moisture handling and packaging S2080 J-STD-033
Contextual Info: Moisture Effects on the Soldering of Plastic Encapsulated Devices S2080 V4 Introduction Improper packaging, storage, and handling of plastic encapsulated devices PED’s can trap moisture within the devices and lead to damage during reflow soldering to printed circuit boards. As part of reliability qualification

PQFP-n16

Abstract: S2083 MASW-000825-12770T PIN14
Contextual Info: MASW-000825-12770T HMICTM PIN Diode SP2T 20 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Rev. V4 Functional Diagram TOP VIEW •        Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: Tx = 0.24 dB Avg @ 2025 MHz, 35mA

DECT telephone schematic

Abstract: GRM155F51C104ZA01B
Contextual Info: DECT Power Amplifier 1880 - 1930 MHz Preliminary V1P MAAPSS0071 Lead Free MAAPSS0071 Lead Free Features • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT

S2083

Contextual Info: MAAP-011027 Amplifier, Power, 8 W 5.2 - 5.9 GHz Rev. V1 VD2a VD2a VD1a VG2a 1 15 GND GND GND RFIN RFOUT GND GND 5 11 10 6 Each device is 100% RF tested to ensure performance compliance. GND VD2b GND VD2b The MAAP-011027 is a 2-stage, 8 W saturated C-band power amplifier in a 5 mm 20 lead PQFN

Contextual Info: RF Power Amplifier for 2.4 GHz ISM Preliminary V1P Lead Free MAAPSS0066 Lead Free Features • • • • • • • MAAPSS0066 Functional Schematic Ideal for WDCT Applications Saturated Output Power: +25 dBm Typical Power Gain: 25 dB Typical Low Current: 400 mA at PSAT

GRM1555R60J105KE19

Abstract: murata 0402 footprint
Contextual Info: RF Power Amplifier for 2.4 GHz ISM Preliminary V2P * Lead Free* MAAPSS0066 Lead Free Features • • • • • • • MAAPSS0066 Functional Schematic Ideal for WDCT Applications Saturated Output Power: +25 dBm Typical Power Gain: 25 dB Typical Low Current: 400 mA at PSAT

DECT telephone schematic

Contextual Info: DECT Power Amplifier 1880 - 1930 MHz Preliminary V2P MAAPSS0071 Lead Free Features • • • • • • • • Functional Schematic Ideal for DECT Applications Saturated Output Power: +26 dBm Typical Power Gain: 26 dB Typical Low Current: 400 mA at PSAT

Contextual Info: MASW-008955 GaAs SP3T Switch DC - 3.5 GHz M/A-COM Products Rev. V2 Features • • • • • • • • Application Schematic Low Insertion Loss: 0.55 dB @ 2.45 GHz High P1dB: 35 dBm @ 2.6 V 0.5 micron GaAs pHEMT Process Lead-Free 2 mm 8-Lead PDFN Package

MASW-010

Contextual Info: MASW-010612 GaAs SP3T Switch DC - 3.5 GHz Rev. V1 Functional Schematic Features •        Low Insertion Loss: 0.6 dB High P1dB: 36 dBm 0.5 micron GaAs pHEMT Process Fast Settling Speed for timing-sensitive applications

Contextual Info: MAAMSS0073 RF Driver Amplifier 250 - 4000 MHz M/A-COM Products Rev. V2 Features • • • • • • • • Functional Block Diagram Broadband High Gain Operation Optimized Performance for WiMax Applications Excellent EVM Performance: 1.5% @ 21 dBm High Efficiency

M513

Abstract: MAAM-000073-001SMB MAAMSS0073 MAAMSS0073TR-3000 S2083
Contextual Info: MAAMSS0073 RF Driver Amplifier 250 - 4000 MHz M/A-COM Products Rev. V3 Features • • • • • • • • Functional Block Diagram Broadband High Gain Operation Optimized Performance for WiMax Applications Excellent EVM Performance: 1.5% @ 21 dBm High Efficiency

s2083

Abstract: catv amplifier ETN1-1-13
Contextual Info: MAAMSS0004 Low Noise CATV Amplifier 50 - 870 MHz Features • • • • • Advanced A2 MAAMSS0004 Functional Schematic Low Distortion Low Noise Figure Push Pull Design Single Positive Supply 4 mm FQFP-N 20 Lead Package Description M/A-COM’s MAAMSS0004 is a GaAs

Contextual Info: MAAMSS0003 Low Noise CATV Amplifier 50 - 870 MHz Features • • • • • Advanced A2 MAAMSS0003 Functional Schematic Low Distortion Low Noise Figure Push Pull Design Single Positive Supply 4 mm FQFP-N 20 Lead Package Description M/A-COM’s MAAMSS0003 is a GaAs

Contextual Info: MASW-008955 GaAs SP3T Switch DC - 3.0 GHz M/A-COM Products Rev. V1 Features • • • • • • • • • Application Schematic Low Insertion Loss: 0.55 dB @ 2.45 GHz High P1dB: 35 dBm @ 2.6V 0.5 micron GaAs pHEMT Process Lead-Free 2 mm 8-Lead PDFN Package

Contextual Info: MAFC-004403 Frequency Doubler 16 - 24 GHz Output Advanced—Rev. V1A Functional Block Diagram Features •      16 - 24 GHz Output Frequency Range 17 dBm Output Power High 1xFIN and 3xFIN Suppression High Dynamic Range Lead-Free 4 mm, 16-Lead QFN Package