S2 7C Search Results

A988

Abstract: DSP56800 FE8B SR-0005
Contextual Info: Instruction Set Details Descriptions MPY MPY Signed Multiply Operation: + S1 * S2 → D no parallel move S1 * S2 → D (one parallel move) S1 * S2 → D (two parallel reads) Assembler Syntax: MPY (+)S1,S2,D MPY S1,S2,D MPY S1,S2,D (no parallel move) (one parallel move)

M5M5512FP-70LL

Abstract: SS12R 32P3H- E 1008BP-7QL
Contextual Info: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)

Contextual Info: SIEMENS BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 S2 Vbs 60 V h> 14 A ^DS on 0.1 n Package Ordering Code TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V'ds BUZ 71 S2 60 V b 14A ^DS on Package Ordering Code 0.1 Q TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS PROFET BTS 640 S2 Smart Sense High-Side Power Switch Features Product Summary • • • • • • • Operating voltage On-state resistance Load current ISO Current limitation • • • • • • Short circuit protection Current limitation

S3H-02

Abstract: S19C s3vc0 S2LA20 s19j S6K20 S51A CI 576 RAS 0510 S19E
Contextual Info: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3 H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S1 9J S19L S20C S20D S20E S20G S2 0J S20L S20L60 S30L40 S3QL60 S51A

S3H-02

Abstract: S19C s3h 02 S52A S2LA20 S20G S19G s19j S3LA20 S52B
Contextual Info: - -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3 H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S1 9J S19L S20C S20D S20E S20G S2 0J S20L S20L60 S30L40 S3QL60

BUZ11S2

Abstract: buz11 siemens
Contextual Info: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current

8DM1

Contextual Info: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When

MB91F467c

Abstract: MB91F467B max3232acse MB91F467BA D9 female RXD TXD MP3 an17 c33 diode 142 19C P181 JP49
Contextual Info: 6 C23 10nF GND VDD5 C45 10nF VCC GND Pin4 Pin7 Pin10 Pin13 Pin16 Pin21 Pin24 Pin27 Pin30 Pin33 Pin38 Pin41 Pin52 Pin57 Pin112 Pin115 Pin120 Pin123 Pin128 Pin131 Pin134 Pin139 Pin142 GND CON72 8 7 6 5 Q2 R11 [R] GND [S2] Mode optional C18 1µ C47 22pF Pin82

t8001

Abstract: 100CL marking ZLP
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. 0.51 [.020 ] TYP STANDOFFS R E VIS IO N S LTR DESCRIPTION S1 S2 B DATE DWN REVISED PER E C O - 0 8 - 0 1 9 0 9 2

8070N

Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Type Vos Io BUZ 16 50 V 48 A 0.018 Q BUZ 16 S2 60 V 48 A ¡0 .0 1 8 Q R D S o n M axim um Ratings Param eter Continuous drain current , T C = 19 'C Pulsed drain current, Tc = 2 5 ‘ C

BUZ71

Abstract: buz71a
Contextual Info: SIEM ENS SIPMOS Power T ransistors • N channel • Enhancement mode • Avalanche-rated Type ^ DS Id Tc BUZ 71 50 V 14 A 28 °C 0.10 £2 BUZ 71 A 50 V 13 A ^25 "C 0.12 £2 BUZ 71 S2 60 V 14 A 28 'C 0.10 £2 I ^DS on Maximum Ratings Parameter Continuous drain current

31VO

Contextual Info: O N ' I M V d O U 3 H 0 ± S n 0 1-3 L - Z ’A3tí £ B 6 P L L- 0 ¿ 31V0S £ V r 001 3Z1S .£* E ‘0* S2*0* C'O* Í? C2 frsw fe?/?7c/ «7 XHD 31VO ÜHO «O idlAIH >l>d -«o ít&J ' L ^ r r / y - f i s a,#. E«-3Rf- <n c * -^ ' .¿- m . 9 0 / I ¿ As cu -ír'Xt ¿z—

L78LR05

Abstract: L78LR05B
Contextual Info: SANYO SEMICONDUCTOR C O RP ÍEE 7^^70713 □□ □ 34öh T-S2-K- 3> L78LR05 M o n olithic Linear IC 3103 * D I 5V 150mA 5-Pin Voltage Regulator ' 26 2 2 The L78LR05 is a voltage regulator IC that performs the reset signal generating function when the power supply of a microcomputer system is turned ON/OFF. The

MIL-STD-1750

Contextual Info: GEC P L E S S E Y SEMICONDS 43E D • 37 b ñ S2 2 DQIMSS? H « P L S B G E C P L E S S E Y ma317so mSsMl m cM W W m 'm im w m High Performance MIL-STD-1750 Microprocessor Advance data S10103AD S Issue 2.3 O ctober 1990 Features MPROEN PEN EXADEN FLT7N SYSFN

BUZ 140 L

Contextual Info: SIEMENS SIPMOS Power MOS Transistors VDS /q ^D S o n • • • • BUZ 16 BUZ 346 BUZ 346 S2 = 50 . . . 60 V = 48 . . . 58 A = 0.018 Q T O -2 04 AE (BUZ 16) N channel E nhancem ent mode A valanche-proof Packages: TO -204A E (TO-3) T O -2 18 A A (T O P -3)1)

buz71a

Abstract: A1316-A3 BUZ71 SM 71A diode diode L 2 . 71 sm 71a
Contextual Info: S IE M E N S BUZ 71 BUZ 71 A SIPMOS Power MOS Transistors ^D S = Id = ^ D S o n = • • • • BUZ 71 S2 50 . . 60 V 13 . . 14 A 0.1 . .0 .1 2 N channel Enhancem ent mode A valanche-proof Package: TO -220 A B 1) Type Ordering code BUZ 71 C 67078-S 1 31 6-A 2

357N

Abstract: AN6357N AN6359N diagram LG TV circuits LHLT
Contextual Info: AN6357N, AN6359N e r e s ie AN 6357N , AN6359N V T R + — X 0 Ï & /V T R C a p sta n In ter fa ce C ir c u its U nit ^ mm AN6357N, AN6359N li VTR * -r 7" x ? > -f > ? 7 i - x J • 4# « “+i * s2 • AN6357N , AN6359N l± >X<nmifet: M L X i> 4 FG r >~r

im06

Abstract: M54514AP TRANSISTOR 751 ba4 transistor
Contextual Info: b3E • ^4^027 DOm-îbS M IT S U B IS H I b S2 m v \ 1 1 3 M IT S U B IS H I BIPO LA R D IG IT A L ICs M54514AP DGTL L 0 6 I C 7 -U N IT 50mA TR A N S IS TO R ARRAY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54514AP, 7-channel sink drivers, consists of 7 NPN

733 op amp

Abstract: AN6359N AN6359 AN6357N 5SJ6 357N GI op amp
Contextual Info: AN6357N, AN6359N e r e s ie AN 6357N , AN6359N V T R + — X 0 Ï & /V T R C a p s ta n In te rfa c e C irc u its U n it ^ mm AN6357N, AN6359N li VTR * -r 7" x ? > -f > ? 7 i - x J • 4# « “+i * s2 • AN6357N , AN6359N l± >X<nmifet: M L X i> 4 FG r > ~r

LCM151

Abstract: DP15 11010 dp11 LCM103 S4 9C DP10 2f 1001 11E11C
Contextual Info: LCM151 液晶显示模块 1 LCM151 RAM 对应显示笔段表 自左→右 8 为 1→15 位,DP 为小数点 S1-S8 见 LCD 图 D3 D2 D1 D0 ADDR D3 D2 S1 S2 S3 S4 00000 8A 8B 1F 1G 1E 1D 00001 9F 9G 1A 1B 1C DP1 00010 9A 9B 2F 2G 2E 2D 00011 10F 10G 2A 2B 2C

S4B-01

Abstract: S5KC20R C 547c S3840 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z
Contextual Info: - 138- » X m £ [s i # & iË * [S I # tt * B S n % S1 Z A K 2 0 S1 Z A K 4 0 S1ZAL20 S1ZA S4 S1ZB2 0 fr 7 c * t « tc S t® 7 G S1ZB6 0 S2H B20Z S2VB20 S2 V B 6 0 S3 B 4 Q - 0 2 ff« 7 C S3B40-04 S3B40-06 S3B40-08 S3B4 0 - 1 0 S3B4 0-12 •* >; 'J * '