S1 G 47 Search Results
S1 G 47 Price and Stock
Bourns Inc GDT25-47-S1-RPGas Discharge Tubes - GDTs / Gas Plasma Arrestors Next-Generation GDT 5mm 470V, REEL |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
GDT25-47-S1-RP | 2,962 |
|
Buy Now | |||||||
ECS International Inc ECS-147.4-12-30-JGN-TRCrystals 14.7456 MHz 12pF +/-20/30 ppm -40 +85C 5 x 3.2mm 2-Pad SMD RoHS |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
ECS-147.4-12-30-JGN-TR | 2,037 |
|
Buy Now | |||||||
TDK Corporation CGA6P1X7S1N475K250AEMultilayer Ceramic Capacitors MLCC - SMD/SMT Soft Term, MLCC, 1210, X7S, 75V, 4.7uF, 2.5mm, AEC-Q200 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
CGA6P1X7S1N475K250AE | 1,867 |
|
Buy Now | |||||||
Bourns Inc GDT35-47-S1-RPGas Discharge Tubes - GDTs / Gas Plasma Arrestors Next-Generation GDT 5mm 470V |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
GDT35-47-S1-RP | 1,782 |
|
Buy Now | |||||||
Nichicon Corporation UBH1E151MNS1GSAluminum Electrolytic Capacitors - SMD 25VDC 150uF 20% AEC-Q200 |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
UBH1E151MNS1GS | 998 |
|
Buy Now |
S1 G 47 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: SSM9922 G EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive G2 S2 Ideal for DC/DC battery applications D2 BV DSS 20V RDS(ON) 15mΩ 6.8A ID S2 TSSOP-8 S1 G1 S1 D1 Description D1 Power MOSFETs from Silicon Standard provide the |
Original |
SSM9922 SSM9922GEO. | |
JISC7021Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGITEK O FFIC E:7F.,N O .208,SEC .3,JHO NG YA N G Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL: 02 22677686(REP) FAX:(02)22675286,(02)22695616 LED ARRAY LA177B/SEFSBK-S1 DATA SHEET DOC. NO : QW0905-LA177B/SEFSBK-S1 |
OCR Scan |
LA177B/SEFSBK-S1 QW0905-LA177B/SEFSBK-S1 13-Apr-2004 LSEFSBK2693 54TYP 10min) L-STD-202: JISC7021 | |
Si6946DQContextual Info: Si6946DQ Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.080 @ VGS = 4.5 V 2.8 0.110 @ VGS = 2.5 V 2.1 D TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6946DQ 3 6 4 5 D2 S2 S2 G2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
Original |
Si6946DQ S-47958--Rev. 15-Apr-96 | |
S4B-01
Abstract: S5KC20R C 547c S3840 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z
|
OCR Scan |
S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z S5VB60 S10FFD02 50MAX -15MAX-| S4B-01 S5KC20R C 547c S3840 S1ZAK40 S1ZB20 | |
Contextual Info: o Part Numbering PTC Thermistors POSISTORr for Circuit Protection (Part Number) PR G 21 AR 420 M S1 RA q w e r t y u i qProduct ID tResistance Product ID PR PTC Thermistors Chip Type wSeries Code Series G for Overcurrent Protection Expressed by three figures. The unit is ohm (Ω). The first and |
Original |
4000pcs. 3000pcs. | |
Contextual Info: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-476 G 8th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SO P-8 7 8 D D ts ô S1 MOS1 5 6 D D |
OCR Scan |
HAT1024R ADE-208-476 | |
ADG212Contextual Info: LC2M0S Quad SPST Switches ADG211A/ADG212A ANALOG DEVICES A D G 211A A D G 212A -O S1 I I IN1 O- L>J A -OS1 IN1 O- -O D1 IN2 O- >-1 -O S2 IN2 O-O D2 -O S3 1 1 1 IN3 O- LJ A FEATURES 44V Supply Maximum Rating ± 15V Analog Signal Range Low R0 n 11511 max Low Leakage (0.5nA typ) |
OCR Scan |
16-Lead 20-Lead ADG211A DG211 ADG212A DG212 ADG211A/ADG212A 1A/ADG212A 16-Pin ADG212 | |
DG211A
Abstract: S9010
|
OCR Scan |
16-Lead 20-Lead ADG211A DG211 ADG212A DG212 ADG211A/ADG212A INPUT1A/ADG212A 16-Pin DG211A S9010 | |
1N MARKINGContextual Info: International I O R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 JD I g 1n r 3T3D1 ss a t 3 D D2 G2 or a # 3 D D2 Vdss = 20 V Ros on = 0.029Î2 |
OCR Scan |
1435B IRF7311 1N MARKING | |
1N4007
Abstract: peb3264 peb4264 VBI/21
|
Original |
D-81541 Technologgps05755 1N4007 peb3264 peb4264 VBI/21 | |
400M
Abstract: MAX696 MAX697 w4.5 w45 ST FTH M 002
|
OCR Scan |
MAX696 MAX697 400M MAX696 w4.5 w45 ST FTH M 002 | |
Q69-X474
Abstract: siemens varistors SIOV-CN0805 VARISTOR S10k275 dnv certificate Varistor S20K150 Rupture Disk s14k250 siemens S14K250 Q69X3233
|
OCR Scan |
SIOV-S05K- SIOV-S07K B462-P6217-X-X-7400 B462-P6214-X-X-7600 Q69X4342 Q69X3806 Q69X3860 Q69X3808 Q69X4786 Q69X4787 Q69-X474 siemens varistors SIOV-CN0805 VARISTOR S10k275 dnv certificate Varistor S20K150 Rupture Disk s14k250 siemens S14K250 Q69X3233 | |
DO-214AA
Abstract: SL493 SL4148
|
OCR Scan |
DO-214AB) DO-214AA) SL5817 SL106 SL4001 SL4007 DO-214AA SL493 SL4148 | |
Tecnetics Power Supply
Abstract: tecnetics HCHR 018 HCHR 015 c022m hchr tecnetics dc tecnetics ic 208-250 HCHR 0
|
OCR Scan |
300mW. 300mW 24KHz 22KHz Tecnetics Power Supply tecnetics HCHR 018 HCHR 015 c022m hchr tecnetics dc tecnetics ic 208-250 HCHR 0 | |
|
|||
Contextual Info: FUNCTIONS FUJITSU 3.1. BLOCK DIAGRAM - 1 6-B it Bus Mode D15 to D7 to D8, DO, INT UDP LDP -W R SCSI Interface I I -R D I -CSO -C S1 A4 to AO I I il -B H E MODE1 MODEO 1 1 1 MPU Interface -M S G • -C /D • -I/O -A TN - Internal Processor Various Registers |
OCR Scan |
DMD15 D02530Ã | |
BUX 127 VDO
Abstract: 7ROM LM082 ABB BOD 1-17 r 7136a sga 0552 KRY 112 89 1-01 UH1 GW 9n jln4
|
OCR Scan |
uPD17136A /iuPD17136A PD17136A 17P136A PD17134AÌ BUX 127 VDO 7ROM LM082 ABB BOD 1-17 r 7136a sga 0552 KRY 112 89 1-01 UH1 GW 9n jln4 | |
Contextual Info: LITEM ?I MBR2030CT thru 2060CT s e m ic o n d u c t o r s r'v rf f s f - H ’ -f v*f-'-i- -t- '•■■*'*.■*'* V O LTA G E RANGE ;■ ; 30 to 60 Volts s fy&èrËn w ebrikE R s1 CURRENT 20 Amperes TO-22QCT FEATURES • Plastic package has U /L • • |
OCR Scan |
MBR2030CT 2060CT O-22QCT MIL-S-19500 DO-15 0201AD | |
PCM-4
Abstract: so1q PSB 4450 datasheet A11DA ANIC
|
Original |
4450/PSB PCM-4 so1q PSB 4450 datasheet A11DA ANIC | |
lcd p135
Abstract: p155 P127 P130 P131 P132 P133 P134 P135 P135 LCD
|
Original |
ACM0802B CON25 SKP32C83 SKP32C85 lcd p135 p155 P127 P130 P131 P132 P133 P134 P135 P135 LCD | |
4265-2
Abstract: 1N4007 PEB 4265 T Diode 1N4007 vh
|
Original |
D-81541 Infgps05755 4265-2 1N4007 PEB 4265 T Diode 1N4007 vh | |
ACM0802
Abstract: 3r230 ACM0802B CON25 M30260F8A P502A M30262
|
Original |
M16C/26a M30260F8A ACM0802B P90/TB0in/CLKout P91/TB1in P92/TB2in P80/TA4out/U P81/TA4in/U P82/INT0 P83/INT1 ACM0802 3r230 ACM0802B CON25 M30260F8A P502A M30262 | |
P137
Abstract: P130 P131 P132 P133 P134 P155 p146 Renesas M30835 P135 LCD
|
Original |
ACM0802B CON25 SKP32C83 SKP32C84 SKP32C85 P137 P130 P131 P132 P133 P134 P155 p146 Renesas M30835 P135 LCD | |
Contextual Info: DS1350YUABL P R O D U C T PREVIEW D S1 35 0YL /ABL 4096K Nonvolatile SRAM with Power Monitors DALLAS SEMICONDUCTOR PIN A S S IG N M E N T FEA TU R E S • D a t a r e t e n t i o n in t h e a b s e n c e o f W q q A ia • D a t a is a u t o m a t i c a l l y p r o t e c t e d d u r i n g p o w e r l o s s |
OCR Scan |
DS1350YUABL DS1350YL/ABL | |
da73
Abstract: D-A73
|
OCR Scan |
FDC37C665IR FDC37C666IR da73 D-A73 |