S1 18 Search Results

Contextual Info: RI-I11-114A-S1 RI-I11-114B-S1 SCBS822B – NOVEMBER 2006 – REVISED SEPTEMBER 2011 www.ti.com Tag-it HF-I PRO TRANSPONDER INLAYS SQUARE Check for Samples: RI-I11-114A-S1, RI-I11-114B-S1 FEATURES 1 • 2 • • • • • • • ISO/IEC 15693-2, -3; ISO/IEC 18000-3

Contextual Info: LH1513AAC, LH1513AACTR, LH1513AB www.vishay.com Vishay Semiconductors 2 Form A Solid-State Relay FEATURES • Current limit protection DIP S1 S1' S2 S2' • Isolation test voltage 5300 VRMS • Typical RON 10  • Load voltage 200 V S1 8 S1' 7 S2 6 • Load current 140 mA

LH1513

Abstract: LH1513AAC LH1513AACTR LH1513AB
Contextual Info: LH1513AAC, LH1513AACTR, LH1513AB Vishay Semiconductors 2 Form A Solid State Relay FEATURES • Current limit protection DIP S1 S1' • Isolation test voltage 5300 VRMS S2 S2' • Typical RON 10  • Load voltage 200 V S1 8 S1' 7 S2 6 • Load current 140 mA

Contextual Info: LH1514AB/LH1514AAC/LH1514AACTR Vishay Semiconductors 2 Form A Solid State Relay FEATURES SMD DIP • Load voltage 15 V • Load current 150 mA • Isolation test voltage 5300 VRMS • Switching capability up to 50 MHz S1 8 S1 S1' S2 S2' S1' S2 7 6 • Blocking capability dependent upon signal dV/dt

APT0502

Abstract: APTM10TDUM09PG diode "S6 95"
Contextual Info: APTM10TDUM09PG Triple dual common source MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 D4 D1 D6 D3 G1 S1/S2 D2 S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance

DIODE S4 72A

Abstract: APT0502 APTC60TDUM35P APTC60TDUM35PG diode S6 72A
Contextual Info: APTC60TDUM35PG Triple dual Common Source VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module G3 S1 S3 G5 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1/S2 D2 S1 D5 G3

APT0502

Abstract: APTC80TDU15PG
Contextual Info: APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1 /S2 D2 S1 D5 G3 S3/S4

Contextual Info: ADS1146 ADS1147 ADS1148 AD S1 148 AD S1 147 AD S1 146 www.ti.com SBAS453C – JULY 2009 – REVISED APRIL 2010 16-Bit Analog-to-Digital Converters for Temperature Sensors Check for Samples: ADS1146, ADS1147, ADS1148 FEATURES DESCRIPTION • • • • •

AP6901GSM

Abstract: AP-690
Contextual Info: AP6901GSM RoHS-compliant Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance SO-8 S2/A G2 D1 D1 CH-2 Description

ap6900gsm

Contextual Info: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description

LN9926GEO

Contextual Info: LESHAN RADIO COMPANY, LTD. ▼ Low on-resistance LN9926GEO ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount package ▼ Pb-Free package is available G2 S2 D2 S2 S1 TSSOP-8 D1 D1 G1 G1 S1 D2 G2 S1 S2 Absolute Maximum Ratings Parameter

AP4816GSM

Contextual Info: AP4816GSM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 ▼ DC-DC Converter Suitable S1/D2 D1 ▼ Fast Switching Performance SO-8 G2 S2/A S2/A G1 CH-2 Description

Contextual Info: AD ¨ S1 22 5 AD S1 ADS1225 ADS1226 ¨ 22 6 www.ti.com . SBAS346C – MAY 2006 – REVISED JANUARY 2009 24-Bit Analog-to-Digital Converter

Contextual Info: AD ¨ S1 22 5 AD S1 ADS1225 ADS1226 ¨ 22 6 www.ti.com . SBAS346C – MAY 2006 – REVISED JANUARY 2009 24-Bit Analog-to-Digital Converter

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

Contextual Info: Figure S1 Thermal Derating Curve for Surface-mount Devices A = femtoSMD / picoSMD / nanoSMD / microSMD / miniSMD / decaSMD and SMD Figure S1 200 180 miniSMDE190F C = SMDH120 and SMDH160 % of rated hold and trip current B B = 160 140 A C 120 100 80 60 A 40

HCS300 transmitter

Abstract: NTQ105 HCS200 HCS300 HCS301 transmitter low cost eeprom programmer circuit diagram ntq109 PG306001 AN644 HCS301
Contextual Info: AN644 Converting NTQ104/105/106 Designs to HCS200/300s Author: Kobus Marneweck Microchip Technology Inc. 1 S1 2 S2 3 S3 4 8 VDD 7 LED 6 PWM 5 VSS 8 VDD 7 NC 6 PWM PDIP/SOIC S0 1 S1 2 S2/CLK 3 NC 4 5 VSS S0 1 8 VDD S1 2 7 LED S2 3 6 PWM S3/CLK 4 5 VSS HCS200

schneider Pt100 sensor

Abstract: schneider electric Pt100 rtd pt100 4-20ma wiring diagram current source pt100 pt100 sensor interface WITH ADC cip common single LOAD CELL IO4AB nokia 1200 circuit diagram pt100 sensor with adc 4-20mA
Contextual Info: ETHERNET/IP FOR SNAP PAC PROTOCOL GUIDE SNAP-PAC-S1 SNAP-PAC-S2 SNAP-PAC-R1 SNAP-PAC-R2 SNAP-PAC-EB1 SNAP-PAC-EB2 SNAP-PAC-S1-W SNAP-PAC-S2-W SNAP-PAC-R1-W SNAP-PAC-R2-W SNAP-PAC-EB1-W SNAP-PAC-EB2-W SNAP-PAC-S1-FM SNAP-PAC-R1-FM SNAP-PAC-R2-FM SNAP-PAC-EB1-FM

Si6965DQ

Contextual Info: Si6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "5.0 0.060 @ VGS = –2.5 V "3.9 S1 S2 TSSOP-8 8 D 7 S2 3 6 S2 4 5 G2 D 1 S1 2 S1 G1 D Si6965DQ G1 G2 Top View D D P-Channel MOSFET

Si6933DQ

Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.045 @ VGS = –10 V "3.5 0.085 @ VGS = –4.5 V "2.5 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6933DQ G1 G2 Top View D1 D2 P-Channel MOSFET

Contextual Info: AP9938GEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 Low on-resistance D2 BVDSS S2 Capable of 1.8V Gate Drive G1 S1 TSSOP-8 Optimal DC/DC Battery Application S1 20V RDS ON 18m ID D1 6A Halogen Free & RoHS Compliant Product

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Contextual Info: LH1526AB, LH1526AAC, LH1526AACTR www.vishay.com Vishay Semiconductors Dual 1 Form A Solid-State Relay FEATURES DIP S1 S2 SMD • Dual channel 1 form A • Extremely low operating current S1' • High speed operation • Isolation test voltage 5300 VRMS S2'