S-RAM 256K Search Results

64mb edo dram simm

Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Contextual Info: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s

"Video RAM"

Abstract: KM4216V256 KM4216C256
Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.

Contextual Info: HM534253 S eries-262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION HM 534253JP Series The HM534253 is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM

Contextual Info: HM534251A S eries-262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION HM534251AJ Series The HM534251A is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM and

Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SiP MODULE IDT7MP156 FEATURES: DESCRIPTION • H ig h -de n sity 256K (256K x 1) C M O S sta tic RAM m o du le • C ost-effective p la s tic su rfa ce m o un ted RAM p a cka g e s o n an e p o x y lam in ate (FR4) substrate

Contextual Info: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed

Contextual Info: ISSI I S 6 1 S P 2 5 6 1 6 256K x 16 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION MAY 1998 FEATURES DESCRIPTION • Internal self-timed write cycle The IS S I IS61SP25616 is a high-speed, low-power synchronous static RAM designed to provide a burstable,

Contextual Info: EDI8F8259C 256Kx8 Static RAM CMOS, Module S N IG S DE FEATURES DESCRIPTION n 256Kx8 bit CMOS Static The EDI8F8259C is a 2Mb CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. n Random Access Memory

ZA32

Abstract: CY61128 ADZ 12
Contextual Info: fax id: 1085 risaliiJF ;U I Flmcbti S S i^ K JS f F T V f S T “ ¿N &*• CY61128 PRELIMINARY 1M RAM /2M ROM Features that reduces power consumption by more than 99% when de­ selected. • 1.8V -3.3V operation • 128K x 8 RAM and 256K x 8 Mask ROM combination

Contextual Info: i Integrated DeviceTechnolc>3y Inc 256K 64K x 4-BIT CM O S STATIC RAM PLASTIC SIP M O DULE IDT7MP456 FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed C M O S static RAM • Equal access and cycle times — Commercial: 1 2 /1 5/20/25ns • O ne Chip S elect plus one Output Enable pin

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

Static RAM

Abstract: 28pin
Contextual Info: SÔE D I N T E GR AT ED DEVICE 4Ö 257 71 OO ll bb S SO? • IDT BiCMOS STATIC RAM 256K 64K x 4-BIT IDT61B298 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 4 BiCMOS Static RAM • High-speed address/chip select time — Commercial: 12/15/20ns

Contextual Info: PRELIMINARY - - May 1996 Edition 2.0 PRODUCT PROFILE SHEET FUJITSU M B 8 1 V 4 2 6 5 S -6 0 /- 7 0 CMOS 256K X 16BIT HYPER PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Hyper Page Mode Dy na m ic RAM The Fujitsu MB81V4265S is a fully decoded CM OS D ynamic RAM DRAM that contains 4,194,304

pinout of ic 4033

Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 256K x 4-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71V128 Integrated D evice T echnology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CM O S static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise.

Contextual Info: LOGIC DEVICES INC 2bE D • SSbSlOS Q001Û44 b ■ T - 9 i - 2 3 -O S ' L7C197 256K x 1 Static RAM flÄ fü iF lE S - □ 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum

Contextual Info: BiCMOS STATIC RAM 1 MEG 256K x 4-BIT PRELIMINARY IDT71B028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed B iC M O S sta tic RAM • Equal acce ss and cycle tim es — C om m ercia l: 15 /17ns • O ne C hip S elect plus on e O utput E nable pin

Contextual Info: BiCMOS STATIC RAM 256K 32K x 8-BIT PRELIMINARY IDT71B256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 ad vanced high-speed B iC M O S static RAM • Equal acce ss and cycle tim es — C om m ercia l: 10 /12/15ns • O ne C hip S elect plus one O utput E nable pin

Contextual Info: HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word X 4-Bit High Speed CM O S Static RAM The Hitachi HM 6208 and HM 6208H are high speed 256k static R A M S organized as 64k-word x 4 bit. They realize high speed a cc e ss time 25/35/45 ns and low power consum ption, em ploying

Contextual Info: PRELIMINARY - - Jun. 1995 Edition 2.0 . — p a n n i i r . T p r d f i i f s h f f t - FUJITSU MB81V4260S-60/-70 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB81V4260S is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

IDT8M656S50

Abstract: 8M656 T7164
Contextual Info: 256K 16K x 16-BIT & 128K (8K X 16-BIT) C M O S STATIC RAM M O DULE IDT8M656S IDT8M628S FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K /1 2 8 K -b it C M O S sta tic RAM m o du le s • 16K x 16 o rg a n iza tio n (IDT8M 656) w ith 8K x 16 o p tio n

80486 microprocessor block diagram and pin diagram

Abstract: CY7C1325 intel 80.82
Contextual Info: fax id: 1091 ADVANCED INFORMATION CY7C1325 256K x 18 Synchronous 3.3V Cache RAM Functional Description Features • S u p p o rts 117-M H z m icro p ro c ess o r c a ch e s y ste m s w ith zero w ait states T he C Y 7 C 1325 is a 3 .3 V 25 6 K by 18 synch ron ous cache RAM

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT PRELIMINARY IDT71256SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed C M O S static RAM • Equal a cce ss and cycle tim es — M ilitary: 17/20ns — C om m ercia l: 15/17ns • O ne C hip S elect plus one O utput E nable pin