S-MOS SYSTEMS INC Search Results

74ls463

Abstract: 74LS462
Contextual Info: TTL MSI T Y P E S S N 7 4 L S 4 6 2 , S N 74 L S 4 6 3 F IB E R - O P T I C D A T A - L I N K C O N T R O L L E R S AU G U S T 1979 Inexpensive, Reliable Alternative to Conventional Copper-Wire Systems • Single 5-Volt Supply • Inputs and Outputs Compatible with TTL and Low-Level MOS

U634B

Abstract: N6553 MN65531AS
Contextual Info: Panasonic Other MOS LSIs MN65531AS Low Power 6-Bit CM O S A/D Converter for Image Processing • Oven/iew ■ Pin Assignment The MN65531 AS is a totally parallel 6-bit CM OS ana­ log-to-digital converter with a m aximum conversion rate of 20 M SPS. It includes a built-in 3-input m ultiplexer,

R2J20701NP

Contextual Info: R2J20701NP Peak Current Mode Synchronous Buck Controller with Power MOS FETs REJ03G1459-0300 Rev.3.00 Jun 20, 2007 Description This all-in-one SiP for POL point-of-load applications is a multi-chip module incorporating a high-side MOS FET, low-side MOS FET, and PWM controller in a single QFN package. The on and off timing of the power MOS FET is

PD71051

Abstract: IR60-207-3 PD65881GB-P02 VP15-00-3
Contextual Info: DATA SHEET MOS Integrated Circuit PD65881GB-P02 Product with functions equivalent to those of the μPD71051 serial control unit , using the gate array method The μ PD65881GB-P02 has an IP macro (product name: NA55A macro) included in CMOS gate array CMOS-N5,

K4004

Abstract: SN75361* equivalent SN75361A SN75107 SN55109A
Contextual Info: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity

sn75361

Abstract: SN55109A
Contextual Info: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity

Contextual Info: MOS FET Relays G3VM-81HR New Relays Incorporating a MOS FET Optically Coupled with an Infrared LED Have a 6-pin SOP Package and 80-V Load Voltage. • Continuous load current of 1,250 mA. • Dielectric strength of 1,500 Vrms between I/O. RoHS compliant !

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

Contextual Info: TLD369 DUAL CCD IMAGE SENSOR CLOCK DRIVER D 3 2 9 6 . JUNE 198 9 Dual Inverting MOS Driver P PACKAGE TOP VIEW Low Standby Power Dissipation NC Versatile Interface Circuit for Use between TTL Levels and Level-Shifted High-Current, High-Voltage Systems 1A

ask transmitter module

Abstract: colpitts crystal oscillator Radios TH72015 MTX-705 pa 19454 MTX-715 MTX-735 TH72005 TH72035
Contextual Info: RADIO MODULE MTX-705/15/35 FSK/ASK TRANSMITTER MODULE Supports the follow parts: MTX-705 MTX-715 MTX-735 Y R A IN M I L E PR DATA SHEET Radios, Inc. April 14, 2006 Preliminary Data Sheet MTX-705/15/35 FSK/ASK TRANSMITTER MODULE The MTX-705/15/35 FSK/ASK transmitter is

DN2450

Abstract: Voltage to Current Converters marking L2 package SOT A0208
Contextual Info: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

PS7141L-1C

Abstract: PS7141L-1C-A PS7141L-1C-E3 PS7141L-1C-E3-A PS7141L-1C-E4 NL601 PS7141-1C PS7141-1C-A
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7141-1C,PS7141L-1C 8-PIN DIP, 400 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7141-1C and PS7141L-1C are transfer type solid state relays containing normally open N.O. contact and

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 Ω LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS

Contextual Info: Doc No. TT4-EA-12566 Revision. 2 Product Standards MOS FET FK6K02010L FK6K02010L Silicon N-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low drain-source On-state Resistance:RDS on typ. = 13 m （VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L FK3303010L Silicon N-channel MOS FET Unit : mm For switching FK350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant

Contextual Info: REV. 1.2 FS8822-DS-12_EN Datasheet FS8822 Voltage Detectors with Built-in Delay Circuit SEP 2006 FS8822 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7241E-1A 4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE −NEPOC Series− 1-ch Optical Coupled MOS FET DESCRIPTION The PS7241E-1A is an optically coupled element that combines a GaAs infrared LED on the input side with a

MTM761100L

Contextual Info: Doc No. TT4-EA-10443 Revision. 2 Product Standards MOS FET MTM761100LBF MTM761100LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low Drain-source On-state Resistance : RDS on typ. = 30 m (VGS = -4.0 V)

Contextual Info: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25  Features 1  Low drain-source ON resistance:RDS(on)typ. = 12.0m （VGS = -2.5 V)

Contextual Info: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-12099 Revision. 2 Product Standards MOS FET MTM684100LBF MTM684100LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features  Low drain-source On-state Resistance RDS on typ. = 32 m (VGS =-4.0 V)  Low drive voltage:1.8V drive

Contextual Info: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)

MP-25

Abstract: NP55N06CLD NP55N06DLD NP55N06ELD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.