S-MOS NAVNET Search Results

S-MOS NAVNET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TCK424G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

S-MOS NAVNET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B8228 Contextual Info: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8	OCR Scan	SLA10000 SLA10000 B8228	PDF
S-MOS navnet Abstract: S-MOS asic B16c F1841 Contextual Info: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel	OCR Scan	SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841	PDF
TTL 7466 Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY Contextual Info: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs	OCR Scan	SLA9000PIUS SLA9000Plus F240-16 TTL 7466 B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY	PDF
T157WG Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE Contextual Info: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and	OCR Scan	GG01522 SLA10000 SSC5000 B8259 B8237 B82284 B8255 T157WG S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE	PDF
SLA1024 Contextual Info: SbE » S-n 0 S S Y S T E M S INC • 7 c13E tîDtl D D D 1 S 3 E SfiM « S U O SLA10000L Series HIGH SPEED LOW POWER CMOS GATE ARRAYS ■ DESCRIPTION The S-MOS SLA1OOOOL series is a family of sea-of-gates high speed gate arrays manufactured on S-MOS’ stateof-the-art 0.8 micron double-metal Silicon gate CMOS process. The series consists of 11 arrays ranging from	OCR Scan	SLA10000L SLA1024	PDF
34992 Abstract: SSC5100 F232-10 pinpad 78568 Contextual Info: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20	OCR Scan	SSC5000 SSC5000 SSC50LQ C-115 34992 SSC5100 F232-10 pinpad 78568	PDF
SLA1024 Abstract: SLA1081 SLA1039 SLA1029 Contextual Info: S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS • DESCRIPTION The SLA10000 Series is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 10 arrays ranging from 8,000 to 101,800 usable gates	OCR Scan	SLA10000 F80-5 F100-5 F120-8 F128-5 F128-8 F144-8 F160-8 F184-16 SLA1024 SLA1081 SLA1039 SLA1029	PDF
SLA1029 Contextual Info: S-M 0 S SYSTEMS 31E D INC • 7S 32e 0e! Q00DSÖ3 1 BISMO S L A 1 OOOOseries CMOS HIGH SPEED GATE ARRAYS - r - i£ ■ w /~ ô j DESCRIPTION The S U M 0000 Series Is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists o f 10 arrays ranging from 8,000 to 101,800 usable gates	OCR Scan	Q00DS SLA10000 Ta-25 SLA1029	PDF
SLA912S Abstract: SLA906 32645 11978 Contextual Info: SLA9000senes CMOS HIGH SPEED GATE ARRAYS Preliminary • DESCRIPTION The SLA9000 Series is a family of sea-of-gates arrays manufactured on S-MOS' state-of-the-art 1.0 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 1,978 to 14,690 usable gales and	OCR Scan	SLA9000senes SLA9000 SLA9000y -24mA -48mA SLA904S SLA906S SLA908S SLA909S SLA912S SLA906 32645 11978	PDF