S-6 DIOD Search Results

DI 156 S

Abstract: KA206 THY 101 S2614 kc202e k*206
Contextual Info: SCR/Diode Modules IGBT Presspacks Stacks Outlines Accessories Explanations 52 KA 20.X-V 91 115 91(115) Anschluß an Stromschienen muß elastisch erfolgen. 29(41) 45 (.) für Bauelemente s=26 Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

Contextual Info: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247

Contextual Info: SbE D • 7^5=5237 OQMlìS? 175 ■ S 6 T H ¡Fi S G S -T H O M S O N RÆDOœLi @iQ gi TL03',/ 1f s 6 s-thohson B Y T 2 3 0 P I(V - 1 2 0 0 FAST RECOVERY RECTIFIER DIODE ■ VERY HIGH REVERSE VOLTAGE CAPABILI­ TY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES

D0217

Abstract: IRFP 620 IRF622 application FZJ 111 irf 44 n FZJ 101 transistor irf620 pj62 IRF620 IRF621
Contextual Info: 3GE » • 7^23? 002=1703 1 ■ ' T v3P|- [ S G S -T H O M S O N * 7 # [ * œ Œ ( g r a [ i * § r= IR F 6 2 0 / F I - 6 2 1 /F I IR F 6 2 2 / F I - 6 2 3 /F I Z S G S-thomJoF TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS 200 V 200 V ^DS(on

2PS25

Abstract: LC-2228
Contextual Info: DATA SHEET M Ff / PHOTOCOUPLER / PS2566-1 ,-2, PS2566L-1 ,-2 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION T h e P S 2 5 6 6 -1 , -2 and P S 2 5 6 6 L -1 , -2 are o p tica lly cou ple d iso la to rs con tain ing G aA s light em itting dio d e s and an

aeg diode Si 11 n

Contextual Info: Si GEC P L E S S E Y S f M I C. O IN D ADVANCE INFORMATION L C T O R S P D S P 1 6 1 1 6 /A 16 BY 16 BIT COMPLEX MULTIPLIER Supersedes version in December 1993 Digital Video & Digital Signal Processing 1C Handbook, HB3923-1) The PDSP16116A will m ultiply tw o complex (16 + 1 6 ) bit

gs 069

Contextual Info: Tem ic SÌ3439DX S em i co n d u c t or s P-Channel, 2.5-V G-S Rated MOSFET Product Summary V d s (V) -20 I d (A) ± 1.8 ± 1 .6 ±1.5 rDS(on) (^ ) 0.155 @ V Gs = ^ .5 V 0.200 @ V os = -2.7 V 0.230 @ V os = -2.5 V (4)S Q TSOP-6 Top View (3) G 3 mm Ô (1,2, 5, 6) D

WF vqe 24 e

Abstract: wf vqe 24 d wf vqe 24 f wf vqe 14 e transistor d2624 LN2003A vqe 14 e led display WF VQE 13 WF vqe 13 D WF VQE 24
Contextual Info: ULN2001A THRU ULN2004A DARLINGTON TRANSISTOR ARRAYS S L D S 0 3 6 A - D2624, DECEMBER 1 9 7 6 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output High-Voltage Outputs . . . 50 V Output Clamp Diodes

940by

Contextual Info: 7E6 TUNG-SOL - DUO-DIODE TRIODE AMPLIFIER N UNI PO TEN TIA L CATHODE 21 T-9 MAX. 2 “ H EA TE R 32 MAX. 6 .3 VOLTS 0 .3 AMPERE AC OR DC B OT T OM V IEW G LA S S BULB LOCK ING-1N 8 PIN BASE THE T U N G -S O L 7 E 6 C O N S I S T S OF TWO D I O D E S AND A T R IO D E

6W4GT

Contextual Info: 6W4GT DIODE r '6 l~ 1*^- MAX COATED UN I P O TEN TIA L CATHODE HEATER T -9 6 . 3 VOLTS 1 .2 AMP. AC OR DC H * BOTTOM VIEW ANY MOUNTING PO SITIO N SHORT IN T ER M E D IA T E S H E L L 6 P IN OCTAL PIU S HOT B E ' ! > •*! M AX I t SMAL L U S E D AS T I E points

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

204 OPTOCOUPLER

Contextual Info: SIEMENS SFH601 SERIES TRIOS * PHOTOTRANSISTOR OPTOCOUPLER FEATU R ES • H igh C u rre n t T ra n s fe r R a tio s S F H 6 0 1 -1 ,40 to 80% SFH601-2, 63 to 125% S F H 6 0 1 -3 ,100 to 200% S F H 6 0 1 -4 ,160 to 320% • W ith s ta n d T e s t V oltag e 1 M in u te , 5300 V

Contextual Info: 4 W a t t Sin e W a ve Telephone Ring Generator 4 REN @8 6 Vr m s t o 1 2 REN @4 5 Vr m s PCR- SI N 0 6 Se r ie s !" PCR- SI N 0 6 V1 2 F0 0 !" PCR- SI N 0 6 V2 4 F0 0 !" PCR- SI N 0 6 V4 8 F0 0 !" PCR- SI N 0 6 V1 2 F0 0 - L 9 PCR-SIN06 Series 4REN@86Vrms to 12REN@45Vrms SINE WAVE TELEPHONE RING GENERATOR

diode sy 104

Contextual Info: SÌ3457DV Vishay Siliconix P-Channel 30-V D-S MOSFET R d s <o n ) (^ ) 0.065 @ V GS = - 1 0 V 0 .1 0 0 V q s « - 4 5 V 9 ° (4) S Q TSOP-6 Top View H cr 1 Œ 2 5 n cr 3 4 n 6 (3) G °~ t O (1 ,2 , 5, 6) D P -C h a n n e l M O S F E T A B S O L U T E M A X IM U M

si3439

Contextual Info: Tem ic SÌ3439DX Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V d s (V ) -2 0 r DS(on) ( ^ ) I d (A ) 0.1 5 5 @ V GS = —4.5 V ± 1 .8 0 .2 0 0 @ V Gs = - 2 .7 V ± 1 .6 0 .2 3 0 @ V Gs = - 2 .5 V ± 1 .5 (4) S Q TSOP-6 Top View 1 6

Contextual Info: ftA ftC T U ? !? Low Noise Bridge Single In-line Package Bridge Diode •*W fN -äsH OUTLINE DIMENSIONS LN2SB60 6 0 0 V 1 .6 A • is s ^ x • S IP l l v t r - V RATINGS Absolute Maximum Ratings m 1 Item Storage Temperature Operating Junction Temperature

Si6467DQ

Contextual Info: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "8.0 0.019 @ VGS = –2.5 V "7.0 0.027 @ VGS = –1.8 V "5.8 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6467DQ G *Source Pins 2, 3, 6 and 7

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123GE6PM Microcontroller identical to LM4F230E5QR D ATA SH E E T D S -T M 4C 123G E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 373A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237E6PM Microcontroller identical to LM4F130E5QR D ATA SH E E T D S -T M 4C 1237 E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 358A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123BE6PM Microcontroller identical to LM4F210E5QR D ATA SH E E T D S -T M 4C 123BE 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 365A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1231E6PM Microcontroller identical to LM4F110E5QR D ATA SH E E T D S -T M 4C 1231 E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 336A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C123FE6PM Microcontroller identical to LM4F231E5QR D ATA SH E E T D S -T M 4C 123F E 6 P M - 1 4 9 9 5 . 2 6 6 7 S P M S 371A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

617G

Abstract: sfh diode 617 SFH617 reflective optocoupler puls detector sfh617g
Contextual Info: SIEMENS FEATU R ES SFH617G 5.3 kV TRIOS * OPTOCOUPLER Package Dimensions in Inches mm * C u rre n t T ra n s fe r R atios: SFH 617(3-1,40-80% S F H 6 1 7 G -2 ,63-125% SFH 6 1 7 G -3 ,100-200% S F H 6 1 7 G -4 ,160-320% * C reepage D is ta n c e s a n d C learances

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1231E6PM Microcontroller identical to LM4F110E5QR D ATA SH E E T D S -T M 4C 1231 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 336 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright