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S3630
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ABB Group
|
Power Semiconductor Data Book 1976 |
Scan |
PDF
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88.12KB |
2 |
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S3630
|
|
Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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140.6KB |
1 |
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S3630
|
|
Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
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146.37KB |
2 |
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S3630A
|
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American Microsystems
|
128K Bit NMOS ROM |
Scan |
PDF
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122.08KB |
4 |
|
S3630B
|
|
American Microsystems
|
128K Bit NMOS ROM |
Scan |
PDF
|
122.08KB |
4 |
|
S3635
|
|
Unknown
|
Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
|
132.28KB |
1 |
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S3635
|
|
Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
|
146.38KB |
2 |
|
S3639
|
|
Unknown
|
Shortform Transistor PDF Datasheet |
Short Form |
PDF
|
160.93KB |
1 |
VS3633GA
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VANGUARD
|
30V/12A N-Channel Advanced Power MOSFET with 11 mΩ RDS(on) at VGS=10V, 16 mΩ at VGS=4.5V, in DFN2x2x0.75-6L package, featuring low gate charge and optimized switching performance. |
Original |
PDF
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VS3638GA
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VANGUARD
|
30V/12A N-Channel Advanced Power MOSFET with 10 mΩ RDS(on) at VGS=10V, 18 mΩ at VGS=4.5V, housed in DFN2x2x0.75-6L package, suitable for power management applications requiring low on-resistance and high efficiency. |
Original |
PDF
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VS3638GE
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VANGUARD
|
30V/23A N-Channel PowerMOSFET in PDFN3333 package with 11 mΩ RDS(on) at VGS=10V, featuring fast switching, high efficiency, and 100% avalanche and Rg testing. |
Original |
PDF
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VS3638DE-G
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VANGUARD
|
30V/15A dual N-channel advanced power MOSFET with 12 mΩ typical RDS(on) at VGS=10V, available in PDFN3333 package, designed for high efficiency and fast switching applications. |
Original |
PDF
|
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VS3633GE
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VANGUARD
|
30V/24A N-Channel Advanced Power MOSFET with 9.5 mΩ RDS(on) at VGS=10V, 15 mΩ at VGS=4.5V, 32 A silicon-limited continuous drain current, and 128 A pulse drain current, available in PDFN3333 package. |
Original |
PDF
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