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S3-600
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Sussex Semiconductor
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.25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE |
Original |
PDF
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148.01KB |
7 |
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S3-600
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Sussex Semiconductor
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3 AMP STANDARD RECOVERY RECTIFIER DIE |
Original |
PDF
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73.72KB |
3 |
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S3-600-200
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Sussex Semiconductor
|
.25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE |
Original |
PDF
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148.01KB |
7 |
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S3-600-50
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|
Sussex Semiconductor
|
.25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE |
Original |
PDF
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148.01KB |
7 |
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S3-600-50
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Sussex Semiconductor
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RECTIFIER DIE |
Original |
PDF
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88.64KB |
4 |
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S3605
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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131.84KB |
1 |
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S3605
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Syntron
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Silicon Rectifier Data Book 1971 |
Scan |
PDF
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146.37KB |
2 |
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S360B110
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
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81.62KB |
1 |
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S360B110C
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
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81.62KB |
1 |
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S360B114
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
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81.62KB |
1 |
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S360S7
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Sensitron Semiconductor
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3.0A Iout, 600V Vrrm Fast Recovery Rectifier |
Scan |
PDF
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84.4KB |
2 |
VS3604DT
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VANGUARD
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30V/300A N-Channel Power MOSFET in TO-220AB package with typical RDS(on) of 1.3 mΩ at VGS=10V, designed for high-efficiency power applications requiring low on-resistance and logic-level gate control. |
Original |
PDF
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MURS360
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SUNMATE electronic Co., LTD
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Surface mount super fast recovery diodes in SMC/DO-214AB package, 50 to 600V reverse voltage, 3.0A average rectified current, 100A non-repetitive surge current, 35ns reverse recovery time, -65 to +150°C operating temperature. |
Original |
PDF
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VS3606AT
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VANGUARD
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30V/140A N-Channel Advanced Power MOSFET with 3 mΩ typical RDS(on) at VGS=10V, TO-220AB package, designed for high-efficiency power management applications. |
Original |
PDF
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VS3606AE
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VANGUARD
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30V/92A N-Channel Advanced Power MOSFET with 2.5 mΩ typical RDS(on) at VGS=10V, PDFN3333 package, designed for high efficiency power management applications requiring low on-resistance and fast switching performance. |
Original |
PDF
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VS3606AP
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VANGUARD
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30V/106A N-Channel Advanced Power MOSFET with 2.0 mΩ RDS(on) at VGS=10V, 2.9 mΩ at VGS=4.5V, designed for 5V logic level control and fast switching applications in a PDFN5x6 package. |
Original |
PDF
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MURS360
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JCET Group
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MURS320 through MURS360 Super Fast Recovery Rectifier Diodes feature 3.0A average forward current, 200V to 600V repetitive peak reverse voltage, high surge current capability, and low reverse recovery time for efficient rectification in surface mount applications.MURS320 through MURS360 Super Fast Recovery Rectifier Diodes feature 3.0A average forward current, 200V to 600V repetitive peak reverse voltage, high surge current capability, and low reverse recovery time for efficient rectification in surface mount applications. |
Original |
PDF
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VS3602GPMT
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VANGUARD
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30V/200A N-Channel Power MOSFET with ultra-low on-resistance of 0.6 mOhm at VGS=10V, available in PDFN5x6 package, featuring high efficiency, fast switching, and 100% avalanche tested design. |
Original |
PDF
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VS3606AD
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VANGUARD
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30V/110A N-Channel Advanced Power MOSFET with low on-resistance of 2.6 mΩ at VGS=10V, TO-252 package, suitable for high-efficiency power switching applications. |
Original |
PDF
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VS3606ATD
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VANGUARD
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30V/140A N-Channel Advanced Power MOSFET with 3 mΩ RDS(on) at VGS=10V, TO-263 package, 100% avalanche tested, suitable for high-efficiency power switching applications. |
Original |
PDF
|
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VS3604DT
