|
S3-600
|
|
Sussex Semiconductor
|
.25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE |
Original |
PDF
|
148.01KB |
7 |
|
S3-600
|
|
Sussex Semiconductor
|
3 AMP STANDARD RECOVERY RECTIFIER DIE |
Original |
PDF
|
73.72KB |
3 |
|
S3-600-200
|
|
Sussex Semiconductor
|
.25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE |
Original |
PDF
|
148.01KB |
7 |
|
S3-600-50
|
|
Sussex Semiconductor
|
.25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE |
Original |
PDF
|
148.01KB |
7 |
|
S3-600-50
|
|
Sussex Semiconductor
|
RECTIFIER DIE |
Original |
PDF
|
88.64KB |
4 |
|
S3605
|
|
Unknown
|
Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
|
131.84KB |
1 |
|
S3605
|
|
Syntron
|
Silicon Rectifier Data Book 1971 |
Scan |
PDF
|
146.37KB |
2 |
|
S360B110
|
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
81.62KB |
1 |
|
S360B110C
|
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
81.62KB |
1 |
|
S360B114
|
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
81.62KB |
1 |
|
S360S7
|
|
Sensitron Semiconductor
|
3.0A Iout, 600V Vrrm Fast Recovery Rectifier |
Scan |
PDF
|
84.4KB |
2 |
MURS360
|
|
SUNMATE electronic Co., LTD
|
Surface mount super fast recovery diodes in SMC/DO-214AB package, 50 to 600V reverse voltage, 3.0A average rectified current, 100A non-repetitive surge current, 35ns reverse recovery time, -65 to +150°C operating temperature. |
Original |
PDF
|
|
|
VS3604DT
|
|
VANGUARD
|
30V/300A N-Channel Power MOSFET in TO-220AB package with typical RDS(on) of 1.3 mΩ at VGS=10V, designed for high-efficiency power applications requiring low on-resistance and logic-level gate control. |
Original |
PDF
|
|
|
VS3604DM
|
|
VANGUARD
|
30V/300A N-Channel Power MOSFET in TO-263 package with RDS(on) of 1.3 mOhm at VGS=10V, featuring low on-resistance, high pulse current capability, and avalanche energy rating of 613 mJ. |
Original |
PDF
|
|
|
|
|
SLSS360-3
|
|
SLKOR
|
3.8-60V, -40°C to 150°C, OVP 80V, ESD ±4kV, SOT23/TO92S |
Original |
PDF
|
|
|
VS3606AT
|
|
VANGUARD
|
30V/140A N-Channel Advanced Power MOSFET with 3 mΩ typical RDS(on) at VGS=10V, TO-220AB package, designed for high-efficiency power management applications. |
Original |
PDF
|
|
|
VS3606AE
|
|
VANGUARD
|
30V/92A N-Channel Advanced Power MOSFET with 2.5 mΩ typical RDS(on) at VGS=10V, PDFN3333 package, designed for high efficiency power management applications requiring low on-resistance and fast switching performance. |
Original |
PDF
|
|
|
VS3606AP
|
|
VANGUARD
|
30V/106A N-Channel Advanced Power MOSFET with 2.0 mΩ RDS(on) at VGS=10V, 2.9 mΩ at VGS=4.5V, designed for 5V logic level control and fast switching applications in a PDFN5x6 package. |
Original |
PDF
|
|
|
VS3603GPMT
|
|
VANGUARD
|
30V/200A N-Channel Advanced Power MOSFET with typical RDS(on) of 1.1 mΩ at VGS=10V, available in PDFN5x6 package, designed for high efficiency and fast switching applications. |
Original |
PDF
|
|
|
VS3602GPMT
|
|
VANGUARD
|
30V/200A N-Channel Power MOSFET with ultra-low on-resistance of 0.6 mOhm at VGS=10V, available in PDFN5x6 package, featuring high efficiency, fast switching, and 100% avalanche tested design. |
Original |
PDF
|
|
|