S 9705 Search Results

332AL

Contextual Info: Tem ic SÌ4466DY S e m i c o n d u c t o r s N-Channel 2.5-V G-S Rated MOSFET Product Summary V D S (V ) 20 r DS(on) ( S ) I d (A ) 0.009 @ Vo s = 4.5 V ± 1 3 .2 0.013 @ V GS = 2.5 V ± 11 D O SO-8 s [ T ~8~| D s (jT ~7~1 D s [ T ~6~| D G [ T ~5~| D I It

Contextual Info: SI6467DQ VISHAY Siliconix P-Channel 1.8-V G-S MOSFET New Product so TSSOP-8 D S D Si6467DQ 'Source Pins 2, 3, 6 and 7 must be tied common S S S G D Top View 6 D A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )

E408

Abstract: CK408 CK-408
Contextual Info: y i v — SÎ6926DQ - Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET V d» (V ) R o S fO N ) IG ) 0.035 @ V g s = 4.5 V 0.040 @ V G s = 3.0 V 20 0.045 @ V q s = 2 5 V

Contextual Info: _ SÌ4936DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET VD. (V) r d s <o n ] (Q ) lD (A) 0.037 @ V q s = 10 V ± 5 .8 0.055 @ V GS = 4.5 V ± 4 .7 30 u u D, SO-8 , A B S O L U T E M A X I M U M R A T I N G S ( T fl f, C U N L E S S O T H E R W I S E

Contextual Info: SÌ3442DV Vishay Siliconix N-Channel 2.5-V G-S MOSFET lo(A> R d s (o n ) {^1 0.07 @ V GS = 4.5 V 0.095 @ V GS = 2 5 V (1 ,2- 5, 6) D O TSOP-6 Top View (3) G < Jï (4) S N-Channel MOSFET A B S O L U T E M A X IM U M R A T I N G S {T & 25 C U N L E S S O T H E R W I S E N O T = i>-

Si4425DY

Contextual Info: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) –30 ID (A) 0.014 @ VGS = –10 V "11 0.023 @ VGS = –4.5 V "8.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SÌ6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product V o * (V) -12 R d s (o n ) (^) M A) 0.014 @ V q s = -4-5 V ±8.0 0.019 @ V q s s -2.5 V ±7.0 0.027 @ V q s - -1 8 V ±5.8 *•" V* SO TSSOP-8 O— il- ‘ Source Pins 2, 3. 6 and 7 must be tied common

Contextual Info: _SÌ6954DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY Vd s OO R o s io n ) I 52) I d IA I 0.065 V G S = 10 V ± 3 .9 0.095 0 V g s = 4 . 5 V ± 3.1 30 d2 Dl o Q TSSOP-8 Di Œ Si E 3] d2 • S Ì6954 D O s, E

Siliconix

Abstract: Si4820DY vishaysiliconix
Contextual Info: Si4820DY Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SÌ4810DY VISH A Y Siliconix T N-Ch 30-V D-S MOSFET + Schottky Diode New Product PRODUCT SUMMARY V ds (V) r D S (O N) (-2) Id (A) 0 .0 1 3 5 @ V g s = 1 0 V ±10 0 .0 2 0 @ V GS = 4 .5 V ±8 30 D D D L S O -8 D I A N—I i ; i t S S G N -C h a n n e l M O S F E T

s63d

Contextual Info: SÌ6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET 4 # V d s (V) Rds<on} (&) Id (A) 0.050 @ V q s = -4.5 V ±3.5 0.085 @ V Gs = -2-5 V ±2.7 %$r* 20 s2 Q TS S O P -8 02 "IS Top View Ô d P-Channel M O SFET 2 P-Channel M O SFET A B S O L U T E M A X I M U M R A T I N G S |T A - 25 C U N L E S S O T H E R W

Si9407AEY

Contextual Info: Si9407AEY Siliconix P-Channel 60-V D-S , 175_C MOSFET New Product Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D G 4 G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si6463DQ

Contextual Info: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.

Si9424DY

Abstract: Si9434DY
Contextual Info: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET

Si9434DY

Abstract: Si9424DY
Contextual Info: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET

Si9424DY

Abstract: Si9434DY
Contextual Info: Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET

CK408

Abstract: CK-408
Contextual Info: SÌ4425DY Vishay Siticonix P-Channel 30-V D-S MOSFET Vo»|Vi nDS(ON) (Q) iD (A) 0.014 @ V G S = - 1 0 V ±11 0.023 @ V Gg = - 4 .5 V ± 8.5 -3 0 S S S W $0-8 H! rm Top V iew D O D D P -C h a n n e i M O S F E T ABSO LU TE M A X IM U M R A T I N G S I T fi

Si6463DQ

Contextual Info: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: Si6463DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.020 @ VGS = –4.5 V "6.5 0.030 @ VGS = –2.5 V "5.2 S* TSSOP-8 D 1 S 2 S 3 6 S G 4 5 D D Si6463DQ 8 D 7 S G * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: SÌ4420PY Vishay Siliconix N-Channel 30-V D-S MOSFET V o * (V) fte S fO N l PI Id (At 0.009 @ V GS = 10 V ±125 0.013 @ V GS = 4.5 V ± 1 0 .5 30 SO-fl 1 0 ' ~ "^ It Ò s N 'C hannel MOSFET A B S O L U T E M A X IM U M R A T IN G S f T , ?5 C U N L E S S O T H E R W IS E N O T E D }

Contextual Info: Si6447DQ Siliconix P-Channel 30-V D-S Rated MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D 1 S 2 D Si6447DQ 8 D 7 S S 3 6 S G 4 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.

S60703

Contextual Info: SÌ4835DY - Vishay Siliconix P-Channel 30-V D-S MOSFET New Product PRODUCT SUM M ARY V ds (V) -3 0 r DS(on) (-2) I d (A) 0 .0 1 9 @ V GS = —10 V ±8 .0 0.033 @ VGS = —4.5 V ±6 .0 s s s

74c73

Abstract: DG408DY 409DJ 408AK
Contextual Info: T em ic DG408/409 S e m i c o n d u c t o r s 8-Ch/DuaI 4-Ch High Performance CMOS Analog M ultiplexers Features Benefits Applications • L o w O n - R e s is ta n c e — r o s 0n : 1 00 Q • R e d u c e d S w itc h in g E rro rs • D a ta A c q u is itio n S y s te m s

Contextual Info: _ SÌ9428DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET New Product PRODUCT SU M M AR Y V p s (V) B o s to n ) (q ) 0.03 @ V qs - 4.5 V I d (A) ±6 20 0.04 V q S = 2.5 V ± 5 .2 u SO -8 It't 3^ O Ô Si N-Channel M OSFET A B S O L U T E M A X I M U M R A T IN G S ( T A ~ 2 5 C U N L E S S O T H E R W IS E N O T E D )