S 876 T Search Results

74ALS874

Abstract: 74ALS876
Contextual Info: TYPES SN54A LS874, S N 54A LS876, S N 54A S 874, S N 54A S 876 S N 74A LS874, SN 74A LS876, S N 74A S 874, S N 74A S 876 DUAL 4-BIT D-TYPE EDGE TRIGGERED FLIP-FLOPS D 2 B 6 1 , A P R IL 1 9 8 2 - R E V I S E D D E C E M B E R 1 9 8 3 • 3-S tate Buffer-Type Outputs Drive Bus-Lines Directly

2SB1407

Abstract: 2SD2121 Hitachi DSA00315
Contextual Info: 2SB1407 L /(S) Silicon PNP Epitaxial ADE-208-876 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S)

zo 103 ma

Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Contextual Info: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­

BSY18

Abstract: BSY17 Q60218-Y17 Q60218-Y18 Q60218-Y62-A Q60218-Y62-B Q60218-Y63 bd 743 transistor
Contextual Info: NPN-HF-Transistoren für Schalteranwendungen BSY BSY - BSY BSY 17 18 62 63 B SY 17, B SY 18, B S Y 62 und B S Y 63 sind doppeltdiffundierte epitaktische NPN-Silizium-HFPlanar-Transistoren im Gehäuse 18 A3 DIN 41 876 T O -18 . Der Kollektor ist mit dem Gehäuse

REF194GS

Abstract: TLC876 TLV2442A
Contextual Info: v T exas In s t r u m e n t s TLC876 Analog-to-Digital Converter Evaluation Board USER MANUAL 1997 Mixed-Signal Products TLC 876 Evaluation Module Application Note The TLC876 Evaluation Module provides a platform for lab prototype evaluation of the Texas Instruments TLC876 10 bit, 20 MSPS high speed analog to digital converter.

WR187

Abstract: 138-32 UNC-2B PE9822 1876
Contextual Info: •2.781- 1.781 i-tI .868 1.868 1.876 183 1.430 .876 I♦ WR187 _ / .145/,1500 THRU 4 PLACES - .138-32 UNC-2B TAP <4 HDLES) BACK VIEW ,6 2 5 -2 4 UNEF-2A- 2.245 BACK- .250 •1.880- P A S T E R N A C K E N T E R P R I S E S , INC. P.O B O X 16759, IRVINE, C A 92623

Contextual Info: SIEMENS CMPNTS-, OPTO MME D Ö23b32b [1005120 7 * S I E X SIEM ENS SFH 401 SERIES GaAs INFRARED EMITTER T-41-U Package Dimensions in Inches mm .187(476) .181(4.6) 0.10 ( 2 .54) .216(55) ¿ I f (535) FEATURES Maximum Ratings • Package: 18 A 3 DIN 41 876 (TO 18),

2N3003

Abstract: 2N876 2N877 2N878 2N879 2N880 2N881 2N882 2N883 2N884
Contextual Info: Discrete Devices Maximum Trigger Characteristics Type Volts 'G T m A V gt (V) Silicon Controlled Rectifiers Surge Current (A) RMS On-State Current <T R M S (A) Package 2N 876 15 0.2 0.8 6 0.6 T O -1 8 Metal 2N877 30 CI.2 0.8 6 0.6 T O -1 8 Metal 2N 878 eo

A 933 S transistors

Abstract: N 2222 2N222 2221-2N TE 2221
Contextual Info: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors

DT04-12PA

Abstract: dt04 DT04-12P sti 5189 deutsch dt04-12p DT04-12P DEUTSCH DT04-12PA-CE07 DT04-12PB-CE07 dt04-12 ce07
Contextual Info: .876 [22.253 3DLJÉlEtë m IX H I X 1 1IÎW ✓ 1I3W IX DATE CODE: MONTH IS R E P R E S E N T E D ^ BY SEQUENTI AL ALPHA N \ .1X1 i:w CHARACTERS. E X : A = JANUARY. I X 11 IÎW DATE CODE: YEAR I S REPRESENTED BY THE LAST NUMERICAL I X 1N 1», D I G I T . E X . 0 = 2000

BCY 59

Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Contextual Info: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­

Q62702-F320

Abstract: BFW 72
Contextual Info: N P IM -S iliz iu m -P la n a r-H F -T ra n sisto r B F W 30 BFW 30 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z.B. für Vertikal­ verstärker in Breitband-Oszillografen und für Breitband-Antennenverstärker. Die Anschlüsse

Contextual Info: E C NO C Y 13-5 876 C Y 13-5 950 DATE 1 3 .0 1 .0 9 1 3 .0 1 .2 5 REV B C R E V IS IO N S D E S C R IP T IO N CHANGER JO RRY JO RRY CHG. T I T L E C A N C E L T IN N E D A58 +5 18AWG RED 28AWG RED SOLDERED P' 18AWG BLACK NOTES 8AWG BLACK 1. THIS PRODUCT MUST MEET EU 2002/95 EC ROHS COMPLIANCE.

TRANSISTOR K 314

Abstract: antenne
Contextual Info: BFS 55 Nicht für N e u e n tw ick lu n g IMPIM -Transistor fü r H F -A n w e n d u n g e n bis in den G H z -B e re ic h B F S 55 ist ein N PN -Silizium -H F-Transistor im Gehäuse 18 A 4 D IN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist besonders für H F -A n ­

713 1 99-1487-812-08

Abstract: 99-0429-162-04
Contextual Info: 713 ¡ 3 binder • S T E C K V E R B I N D E R ü TI Sensor Steckverbinder Serie 713 M12xl Kurzinformation Sensor connectors series 713 (M l2x1) Briefinformation Kabelsteckverbinder 620 702 709 • • • • 710 711 712 719 • • • • Schirmbar/nicht schirmbar

Contextual Info: E-Series Surface Mount Mixer 876 – 915 MHz EMRS-6HX1 V4 Features • • • • SM - 1 Package LO Power +17 dBm Up to +13 dBm RF Surface Mount Tape and reel packaging available Description M/A-COM’s EMRS-6HX1 is a Low Cost, Low Drive, Passive surface mount Mixer. The EMRS-6HX1 is

Contextual Info: 5 4 CKT MODULE SEATING PLANE l\ RECOMMENDED SOCKET 80 876 13-800 P.C. BOARD HOLE PATTERN 80 876 13-8002 TIN V Y 80 876 13-8003 TIN V Y / j\ T 109.73 — PLATING PART NO T IN /L E A D /£ k \ T (1.27) .050 TY P . END VIEW SC ALE 4:1 4.8 00 NOTES: (3. ±0.05)

Contextual Info: 7 THIS DRAWING IS U N PU B LISH ED . COPYRIGHT RELEASED FOR PUBLICATION A LL BY TYCO ELECTRONICS CORPORATION. 5 - RIGHTS RESERVED. SEE DETAIL X B .0 50 D BEFORE TERMINATION AFTER TERMIN/ ION Pk ,487~ 1 0 . 5 4 MAX [.41 5] ^ POSITION #1 INDICATOR ON FAR SIDE

609-2641 connector

Abstract: flat ribbon cable connector
Contextual Info: 7 THIS DRAWING IS U N PU B LISH ED . COPYRIGHT RELEASED FOR PUBLICATION A LL BY TYCO ELECTRONICS CORPORATION. 5 - RIGHTS RESERVED. SEE DETAIL X B .0 5 0 D BEFORE TERMINATION AFTER TERMIN/ ION Pk ,487~ 1 0 . 5 4 MAX [.41 5] ^ POSITION #1 INDICATOR ON FAR SIDE

08-1136-000-000

Contextual Info: Serie 825 825 Ü TI 620 702 709 710 711 712 719 423 425 440 581 678 680 682 720 Ethernet Steckverbinder Serie 825 M12x1 Ethernet connectors series 825 (M12x1) Kabelsteckverbinder • Schirmbar/360° Schirmanbindung • Gewindeverriegelung M12x1 • Schraubanschluss

NEC obsolete parts

Abstract: 1430L
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S LTR C 20 1 DESCRIPTION DATE REVISED PER EC 0 S 1 3 - 0 2 5 1 - 0 5 DWN APVD BM CR 0 2 JU N 06 POSITION CONNECTOR ASSEMBLY SHOWN.

Contextual Info: Compact limit switch conforming to NFC 63 145 ^ Series 83 870 with cable output IP 66 /67 M e tal c a s e c U L a p p ro v a l Main specifications Metal plunger Characteristics Standard Standard Standard Standard Plunger with 90° roller Plunger with 90° roller

ptc s6

Abstract: 1N400R
Contextual Info: ‘ 6 T Ï 5 9 5 U MI CR O SE MI 02 iE | tllS IS O CORP/POWER 0 2E 0 0 4 8 6 GGDGMflb 1 J - 2- / PTC 872 PTC 874 PTC 876 '-ui TECHNOLOGY T - 0 2 - D Î '4 Power Technology Components ¡¿is. •HIGH VOLTAGE FAST RECOVERY POWER RECTIFIERS 50 AMPERES 200-600 VOLTS •

SDA02 54

Contextual Info: SDA Series Low Profile DIP Switches Typical Applications • Address switch for industrial controls • Logic switching for computers and peripherals • Function controlling for numerous applications H DIP Features/Benefits • Low profile design saves space