S 34 Search Results

VP1306N3

Abstract: VP1220N2 VP1220ND VP1304N2 VP1304N3 VP1304ND VP1310N3
Contextual Info: - 342 * f t m £ tt S X Vd s £ Vg s 'S f é Ta=25'C Vg s Id s s Ig s s Pd Id th) or % * * /CH Vd g * /CH min (nA) Vg s (V) Vd s ( m a ) (V) fiDs(on) VDS= Vg s max (V) # % (Ta=25'C) 14 Ciss g fs iD(on) trss * B m m V g s =0 (*typ) (*typ) (*typ) (max) Id

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i x 4 s a 5 6 ft s s s s s s s s a 7 8 9 10 II 12 S 13 M s a 15 16 s ^ 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i ft x s a s s s s s s s s a s a s ^ 4 5 6 7 8 9 10 II 12 13 S M 15 16 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n / D ^ i S .n<P>j'i3i i C W J i j f f l i S ft x s a s s s s s s s s a s a s ^ ^ ^ . 4 5 6 7 8 9 10 II 12 13 M 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i x 4 s a 5 6 ft s s s s s s s s a 7 8 9 10 II 12 S 13 M s a 15 16 s ^ 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i x 4 s a 5 6 ft s s s s s s s s a 7 8 9 10 II 12 13 S M s a 15 16 17 s ^ 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ft ^W3> n /D^iS.n<P>j'i3i iCW Jijffli x s a s s s s s s s s a s a s ^ 4 5 6 7 8 9 10 II 12 S 13 M 15 16 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i ft x s a s s s s s s s s a s a s ^ 4 5 6 7 8 9 10 II 12 S 13 M 15 16 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ iS .n < P > j'i3 i iC W J ij f f li ft x s a s s s s s s s s a s a s ^ 4 5 6 7 8 9 10 II 12 S 13 M 15 16 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

SOT23 transistor 2A

Abstract: 3405 K 3405 OS 3405
Contextual Info: S T S 3405 S amHop Microelectronics C orp. S ep.15 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V ID F E AT UR E S S uper high dense cell design for low R DS ON . ( m W ) Max R DS (ON) R ugged and reliable. 100 @ V G S = -10V

pitch 1.27 2651

Abstract: 171-26 ribbon cable 1j50
Contextual Info: ThomasëBetts IDC Systems Flat Ribbon Cables .0 5 0 " P itch F la t C ab le 1 7 1 - 2 8 AW6 7/36 S tra n d e d S e rie s 173 - 28 AWG S o lid S e rie s 1 7 9 - 2 6 AWG (7/34) S tra n d e d S e rie s ¡ i D ’T ' C i f i : n S| c í . - . : : l. ï h r Wire Size AWG

05 3404 00

Contextual Info: S T S 3404 S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 60 @ V G S = 10V

MC34184

Abstract: MC33184 MC35184
Contextual Info: - 208 - MC33184, 34184, 35184 m , n - y w - , V s-± 1 5 V jfeta* MC33184 ie * st is « a s m s 36 Ta=25‘C a m m , « • 'S Ü S W S t : 210 u A /am p S f S t t • g ® E iß f f l:± l. 5~±18V :0~500pF ♦ MOTOROLA j p § m , S -n « E U - h : 1 0 V ///s

2SK131

Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Contextual Info: - 34 - f m ít % m £ m A i fr K V Eft * fê Ê * 1 ft * (V) (A) % S ft* P d/ P c h (W) Ig s s (max) (A) Vg s (V) W (min) (max) V d s (A) (A) (V) 4# tt (Ta=25eC ) Id (min) (max) V d s (V) (V) (V) (A) (min) (typ) V d s (S) (S) (V) 2SK128 föT LF LN A }

DIODE S 180

Contextual Info: S T S 3403 S amHop Microelectronics C orp. AUG .16.2005 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V ID F E AT UR E S S uper high dense cell design for low R DS ON . ( m W ) Max R DS (ON) R ugged and reliable. 65 @ V G S = -10V

S2416

Contextual Info: S T S 3402 S amHop Microelectronics C orp. AUG .18 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30@ V G S = 10V

1p8s1p

Contextual Info: 1 PART NUMBER ROWS 10066440-307 2 PWR SIG PWR E P2 2 1 P1 4 E S S D C FM B S S S S FM S S A A 3 A 34.29 2X 2.58 14.83 11.43 THIS HOLE FOR #5 SELF-TAPPING SCREW B B 2.54 5.72 5.72 CONTACT WIRE TABLE 28.90 0.25 6.77 5.72 CONTACT PITCH 8.51 WIRE GAUGE 11.94 15.00

Contextual Info: > I CD I O DIMENSIONS IN METRIC DO NOT SCALE DRAWING sMM DWG. NO. S D -5 9 2 3 3 -9 0 * * 2—I Ftf □ll|l m cu on © " V' h rfK S P ^ - > ^ sh” > v,r ;34+P 7;d 'H -P 7; S 5 S * y_, i ^ a s 4gc3-H-5S-S2V.' § S=SV 4 ¡1 - S S 2 I •■! i s I sDH-oJW-iiSii "0^3

FDH666

Abstract: FDH600
Contextual Info: FAIRCHILD SE MIC OND UC TOR s s p A Schlumberger Company B4 : DE~J 34bTb?4 00E733S A B S S S fg a S S A“ " ' Ultra Fast Diodes PACKAGES • C . .2.5 pF MAX FDH600, 3.5 pF (MAX) FDH666 • VF . . . 1.0 V (MAX) @ 100 mA (FDH666) . . . 1.0 V (MAX) @ 200 mA (FDH600)

mi vo 94v-o

Contextual Info: DESCRIPTION AND FEATURES HOUS ING: MAT'L: BLAC K THE R MOP LAS TIC P OLYE S TE R UL 94-VO .140±.025 .348 .190 LE D S E E TABLE P OS . 1 F eatures : • 3T -1 LE Ds s tack mounted in s ingle block s aves s pace and as s embly time. • High B rite and S uper B rite light output.

Contextual Info: 8-B it Latches, 8-B it Registers w ith Inverting Outputs S N 5 4/7 4L S 5 33 S N 5 4/7 4L S 5 34 S N 5 4 /7 4 S 5 3 3 S N 5 4 /7 4 S 5 3 4 Ordering Information Features/ Benefits • Inverting outputs PART NUMBER • Three-state outputs drive bus lines • 20-pin SKINNYDIP saves space

J5001

Contextual Info: Aluminum Electrolytic Capacitors Power, S n a p - In s 3487 U s e f u l lif e S e e T e c h n ic a l N o t e s T a b le s in P A 0 1 -A 1 P O W E R S T A N D A R D S N A P - IN u F e a t u ie s L a r g e S ;z e , H ig h C a p a c it a n c e A p p lic a t io n s

74ALS1034

Contextual Info: SRI5 4 A LS 1 034, SN 54AS 10 34A, S N 74 A L S 10 3 4 , S N 74 A S 10 3 4 A HEX DRIVERS D 2 6 6 1 , A P R IL 1 9 8 2 - R E V I S E D M A Y 1 9 8 6 'A S 1 0 3 4 A Offers High Capacitive-Drive Capability S N 5 4 A L S 1 0 3 4 , S N 5 4 A S 1 0 3 4 A . . . J P AC KA G E

M1C2951

Abstract: M10295 MIC295103BN
Contextual Info: T MICREL SEMIC ONDU CTOR 34E d a boafian dgooshb s e s m r l M1C2950-02/03 and M1C2951-01/02/03 E fiE S S 1! Adjustable Micropovver Voltage Regulators Preliminary Information 7 ^ S S - l l - 2 3 General Description Features The MIC2950 and MIC2951 are"bulletproof" micropower